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IRF6710S2TR1PBF

IRF6710S2TR1PBF
Mfr. #:
IRF6710S2TR1PBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET 25V 1 N-CH HEXFET 5.9mOhms 8.8nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF6710S2TR1PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6710S2TR1PBF DatasheetIRF6710S2TR1PBF Datasheet (P4-P6)IRF6710S2TR1PBF Datasheet (P7-P9)IRF6710S2TR1PBF Datasheet (P10)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
DirectFET-S1
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
25 V
Id - Kontinuierlicher Drainstrom:
37 A
Rds On - Drain-Source-Widerstand:
11.9 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.4 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
8.8 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
15 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
0.74 mm
Länge:
4.85 mm
Transistortyp:
1 N-Channel
Typ:
DirectFET-Leistungs-MOSFET
Breite:
3.95 mm
Marke:
Infineon / IR
Vorwärtstranskonduktanz - Min:
21 S
Abfallzeit:
6 ns
Produktart:
MOSFET
Anstiegszeit:
20 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
5.2 ns
Typische Einschaltverzögerungszeit:
7.9 ns
Teil # Aliase:
SP001530274
Gewichtseinheit:
0.003527 oz
Tags
IRF6710, IRF671, IRF67, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, N-Ch, VDSS 25V, RDS(ON) 9 mOhm, ID 12A, DirectFET
***ernational Rectifier
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 12 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ment14 APAC
MOSFET, N-CH, 25V; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:25V; On Resistance Rds(on):4.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:1.8W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:DirectFET; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:DirectFET; Current Id Max:12A; Package / Case:S1; Power Dissipation Pd:1.8W; Pulse Current Idm:100A; Termination Type:Through Hole; Voltage Vds Typ:25V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.4V; Voltage Vgs th Min:1.4V
Teil # Mfg. Beschreibung Aktie Preis
IRF6710S2TR1PBF
DISTI # IRF6710S2TR1PBFTR-ND		Infineon Technologies AGMOSFET N-CH 25V 12A DIRECTFET
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6710S2TR1PBF
    DISTI # IRF6710S2TR1PBFCT-ND    		Infineon Technologies AGMOSFET N-CH 25V 12A DIRECTFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IRF6710S2TR1PBF
      DISTI # IRF6710S2TR1PBFDKR-ND      		Infineon Technologies AGMOSFET N-CH 25V 12A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IRF6710S2TR1PBF
        DISTI # 70018854        		Infineon Technologies AGMOSFET,N-Ch,VDSS 25V,RDS(ON) 9 mOhm,ID 12A,DirectFET
        RoHS: Compliant        		0
        • 1000:$1.3500
        • 2000:$1.2200
        • 3000:$1.1200
        IRF6710S2TR1PBF
        DISTI # 942-IRF6710S2TR1PBF        		Infineon Technologies AGMOSFET 25V 1 N-CH HEXFET 5.9mOhms 8.8nC
        RoHS: Compliant        		0
          IRF6710S2TR1PBFInternational Rectifier 788
            Bild Teil # Beschreibung
            IRF6710S2TRPBF

            Mfr.#: IRF6710S2TRPBF

            OMO.#: OMO-IRF6710S2TRPBF

            		 MOSFET 25V 1 N-CH HEXFET 5.9mOhms 8.8nC
            IRF6710S2TR1PBF

            Mfr.#: IRF6710S2TR1PBF

            OMO.#: OMO-IRF6710S2TR1PBF

            		 MOSFET 25V 1 N-CH HEXFET 5.9mOhms 8.8nC
            IRF6710S2PBF

            Mfr.#: IRF6710S2PBF

            OMO.#: OMO-IRF6710S2PBF-1190

            		 Neu und Original
            IRF6710S2TR1PBF

            Mfr.#: IRF6710S2TR1PBF

            OMO.#: OMO-IRF6710S2TR1PBF-INFINEON-TECHNOLOGIES

            		 MOSFET N-CH 25V 12A DIRECTFET
            IRF6710S2TRPBF

            Mfr.#: IRF6710S2TRPBF

            OMO.#: OMO-IRF6710S2TRPBF-INFINEON-TECHNOLOGIES

            		 MOSFET N-CH 25V 12A DIRECTFET
            Verfügbarkeit
            Aktie:
            Available
            Auf Bestellung:
            1000
            Menge eingeben:
            Der aktuelle Preis von IRF6710S2TR1PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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