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| PartNumber | IRF6710S2TRPBF | IRF6710S2TR1PBF | IRF6710S2PBF |
| Description | MOSFET 25V 1 N-CH HEXFET 5.9mOhms 8.8nC | MOSFET 25V 1 N-CH HEXFET 5.9mOhms 8.8nC | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | DirectFET-S1 | DirectFET-S1 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 25 V | 25 V | - |
| Id Continuous Drain Current | 37 A | 37 A | - |
| Rds On Drain Source Resistance | 5.9 mOhms | 11.9 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.8 V | 2.4 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 8.8 nC | 8.8 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 15 W | 15 W | - |
| Configuration | Single | Single | - |
| Packaging | Reel | Reel | - |
| Height | 0.74 mm | 0.74 mm | - |
| Length | 4.85 mm | 4.85 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 3.95 mm | 3.95 mm | - |
| Brand | Infineon / IR | Infineon / IR | - |
| Forward Transconductance Min | 21 S | 21 S | - |
| Fall Time | 6 ns | 6 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 20 ns | 20 ns | - |
| Factory Pack Quantity | 4800 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 5.2 ns | 5.2 ns | - |
| Typical Turn On Delay Time | 7.9 ns | 7.9 ns | - |
| Part # Aliases | SP001524736 | SP001530274 | - |
| Channel Mode | - | Enhancement | - |
| Type | - | DirectFET Power MOSFET | - |
| Unit Weight | - | 0.003527 oz | - |