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SI3590DV-T1-E3

SI3590DV-T1-E3
Mfr. #:
SI3590DV-T1-E3
Hersteller:
Vishay
Beschreibung:
MOSFET N/P-CH 30V 2.5A 6TSOP
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI3590DV-T1-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SI3590DV-T1-E3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
VISHAY
Produktkategorie
FETs - Arrays
Serie
GrabenFETR
Verpackung
Digi-ReelR Alternative Verpackung
Teil-Aliasnamen
SI3590DV-T1
Gewichtseinheit
0.000705 oz
Montageart
SMD/SMT
Paket-Koffer
SOT-23-6 Thin, TSOT-23-6
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
2 Channel
Lieferanten-Geräte-Paket
6-TSOP
Aufbau
1 N-Channel 1 P-Channel
FET-Typ
N- und P-Kanal
Leistung max
830mW
Transistor-Typ
1 N-Channel 1 P-Channel
Drain-zu-Source-Spannung-Vdss
30V
Eingangskapazität-Ciss-Vds
-
FET-Funktion
Logik-Level-Gate
Strom-Dauer-Drain-Id-25°C
2.5A, 1.7A
Rds-On-Max-Id-Vgs
77 mOhm @ 3A, 4.5V
Vgs-th-Max-Id
1.5V @ 250μA
Gate-Lade-Qg-Vgs
4.5nC @ 4.5V
Pd-Verlustleistung
830 mW
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
12 ns 15 ns
Anstiegszeit
12 ns 15 ns
Vgs-Gate-Source-Spannung
12 V
ID-Dauer-Drain-Strom
2.5 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Widerstand
77 mOhms 170 mOhms
Transistor-Polarität
N-Kanal P-Kanal
Typische-Ausschaltverzögerungszeit
13 ns 20 ns
Typische-Einschaltverzögerungszeit
5 ns
Kanal-Modus
Erweiterung
Tags
SI3590DV-T, SI3590D, SI359, SI35, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N / P -Channel 30 V 0.077/0.17 Ohm Surface Mount Power MosFet - TSOP-6
***ical
Trans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R
***ark
Transistor Polarity:n And P Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.062Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:600Mv; Power Dissipation Pd:830Mw Rohs Compliant: No
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI3590DV-T1-E3
DISTI # V72:2272_09216704		Vishay IntertechnologiesTrans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R
RoHS: Compliant		3000
  • 3000:$0.2921
  • 1000:$0.3317
  • 500:$0.3936
  • 250:$0.5178
  • 100:$0.5225
  • 25:$0.6114
  • 10:$0.7472
  • 1:$0.8490
SI3590DV-T1-E3
DISTI # V36:1790_09216704		Vishay IntertechnologiesTrans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R
RoHS: Compliant		0
    SI3590DV-T1-E3
    DISTI # SI3590DV-T1-E3CT-ND    		Vishay SiliconixMOSFET N/P-CH 30V 2.5A 6TSOP
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		46327In Stock
    • 1000:$0.2769
    • 500:$0.3461
    • 100:$0.4378
    • 10:$0.5710
    • 1:$0.6500
    SI3590DV-T1-E3
    DISTI # SI3590DV-T1-E3DKR-ND    		Vishay SiliconixMOSFET N/P-CH 30V 2.5A 6TSOP
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		46327In Stock
    • 1000:$0.2769
    • 500:$0.3461
    • 100:$0.4378
    • 10:$0.5710
    • 1:$0.6500
    SI3590DV-T1-E3
    DISTI # SI3590DV-T1-E3TR-ND    		Vishay SiliconixMOSFET N/P-CH 30V 2.5A 6TSOP
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		42000In Stock
    • 15000:$0.2240
    • 6000:$0.2268
    • 3000:$0.2436
    SI3590DV-T1-E3
    DISTI # 33138108    		Vishay IntertechnologiesTrans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R
    RoHS: Compliant    		6000
    • 3000:$0.3217
    SI3590DV-T1-E3
    DISTI # 33135520    		Vishay IntertechnologiesTrans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R
    RoHS: Compliant    		3000
    • 3000:$0.3110
    • 1000:$0.3467
    • 500:$0.4306
    • 250:$0.4855
    • 100:$0.5394
    • 27:$0.7157
    SI3590DV-T1-E3
    DISTI # SI3590DV-T1-E3    		Vishay IntertechnologiesTrans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3590DV-T1-E3)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 30000:$0.2464
    • 18000:$0.2532
    • 12000:$0.2604
    • 6000:$0.2715
    • 3000:$0.2798
    SI3590DV-T1-E3
    DISTI # SI3590DV-T1-E3    		Vishay IntertechnologiesTrans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R (Alt: SI3590DV-T1-E3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 30000:€0.3489
    • 18000:€0.3749
    • 12000:€0.4059
    • 6000:€0.4719
    • 3000:€0.6929
    SI3590DV-T1-E3
    DISTI # 65K2703    		Vishay IntertechnologiesNPN & PNP MOSFET, 30V, 2A, TSOP,Transistor Polarity:N and P Channel,Continuous Drain Current Id:2.5A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.062ohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:600mV RoHS Compliant: Yes0
    • 2500:$0.3960
    • 1000:$0.5000
    • 500:$0.5690
    • 250:$0.6630
    • 100:$0.7460
    • 50:$0.8420
    • 25:$0.9250
    • 1:$1.0300
    SI3590DV-T1-E3
    DISTI # 06J7626    		Vishay IntertechnologiesMOSFET, N & P CHANNEL, 30V, 0.062OHM, 2.5A, TSOP-6, FULL REEL,Transistor Polarity:N and P Channel,Continuous Drain Current Id:2.5A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.062ohm,Rds(on) Test Voltage Vgs:4.5V RoHS Compliant: Yes0
    • 50000:$0.2970
    • 30000:$0.3110
    • 20000:$0.3340
    • 10000:$0.3570
    • 5000:$0.3870
    • 1:$0.3960
    SI3590DV-T1-E3.
    DISTI # 15AC4252    		Vishay IntertechnologiesTransistor Polarity:N and P Channel,Continuous Drain Current Id:2.5A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.062ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:600mV,Power Dissipation Pd:830mW RoHS Compliant: No0
    • 50000:$0.2970
    • 30000:$0.3110
    • 20000:$0.3340
    • 10000:$0.3570
    • 5000:$0.3870
    • 1:$0.3960
    SI3590DV-T1-E3
    DISTI # 70459524    		Vishay SiliconixMOSFET N/P-CH 30V 2.5A 6TSOP
    RoHS: Compliant    		0
    • 3000:$0.4830
    • 6000:$0.4740
    SI3590DV-T1-E3
    DISTI # 781-SI3590DV-T1-E3    		Vishay IntertechnologiesMOSFET -30V Vds 12V Vgs TSOP-6 N&P PAIR
    RoHS: Compliant    		45296
    • 1:$0.9100
    • 10:$0.7330
    • 100:$0.5560
    • 500:$0.4600
    • 1000:$0.3680
    • 3000:$0.3330
    • 6000:$0.3100
    • 9000:$0.2990
    SI3590DV-T1-E3Vishay IntertechnologiesMOSFET -30V Vds 12V Vgs TSOP-6 N&P PAIR
    RoHS: Compliant    		Americas - 3000
    • 3000:$0.2790
    • 6000:$0.2650
    • 12000:$0.2570
    • 18000:$0.2500
    SI3590DV-T1-E3Vishay Semiconductors 0
      Bild Teil # Beschreibung
      SI3590DV-T1-E3

      Mfr.#: SI3590DV-T1-E3

      OMO.#: OMO-SI3590DV-T1-E3

      		 MOSFET -30V Vds 12V Vgs TSOP-6 N&P PAIR
      SI3590DV-T1-GE3

      Mfr.#: SI3590DV-T1-GE3

      OMO.#: OMO-SI3590DV-T1-GE3

      		 MOSFET -30V Vds 12V Vgs TSOP-6 N&P PAIR
      SI3590DV

      Mfr.#: SI3590DV

      OMO.#: OMO-SI3590DV-1190

      		 Neu und Original
      SI3590DV-T1

      Mfr.#: SI3590DV-T1

      OMO.#: OMO-SI3590DV-T1-1190

      		 Neu und Original
      SI3590DV-T1-E3

      Mfr.#: SI3590DV-T1-E3

      OMO.#: OMO-SI3590DV-T1-E3-VISHAY

      		 MOSFET N/P-CH 30V 2.5A 6TSOP
      SI3590DV-T1-GE3

      Mfr.#: SI3590DV-T1-GE3

      OMO.#: OMO-SI3590DV-T1-GE3-VISHAY

      		 MOSFET N/P-CH 30V 2.5A 6-TSOP
      SI3590DV-T1-E3-CUT TAPE

      Mfr.#: SI3590DV-T1-E3-CUT TAPE

      OMO.#: OMO-SI3590DV-T1-E3-CUT-TAPE-1190

      		 Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1500
      Menge eingeben:
      Der aktuelle Preis von SI3590DV-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,34 $
      0,34 $
      10
      0,32 $
      3,19 $
      100
      0,30 $
      30,24 $
      500
      0,29 $
      142,80 $
      1000
      0,27 $
      268,80 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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