OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

FDPF12N50UT

FDPF12N50UT
Mfr. #:
FDPF12N50UT
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 500V 10A N-Chan Ultra FRFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDPF12N50UT Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220FP-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
500 V
Id - Kontinuierlicher Drainstrom:
10 A
Rds On - Drain-Source-Widerstand:
650 mOhms
Vgs th - Gate-Source-Schwellenspannung:
5 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
21 nC
Pd - Verlustleistung:
42 W
Aufbau:
Single
Handelsname:
UniFET FRFET
Verpackung:
Rohr
Höhe:
16.07 mm
Länge:
10.36 mm
Serie:
FDPF12N50UT
Transistortyp:
1 N-Channel
Breite:
4.9 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
11 S
Abfallzeit:
35 ns
Produktart:
MOSFET
Anstiegszeit:
45 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
60 ns
Typische Einschaltverzögerungszeit:
35 ns
Gewichtseinheit:
0.080072 oz
Tags
FDPF12N5, FDPF12, FDPF1, FDPF, FDP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, UniFETTM, Ultra FRFETTM, 500V, 10A, 800mΩ, TO-220F
***Yang
Trans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 10A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFETTM MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
Power MOSFET, N-Channel, QFET®, 500 V, 9 A, 800 mΩ, TO-220F
***Yang
Trans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 9A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
***nell
MOSFET, N, TO-220F; Transistor Polarity:N; Max Current Id:5.3A; Max Voltage Vds:500V; On State Resistance:0.73ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:30V; Power Dissipation:50W; Operating Temperature Range:-55ºC to +150ºC; Transistor Case Style:TO-220F; No. of Pins:3; SVHC 2:Cobalt dichloride; Case Style:TO-220F; Cont Current Id:5.3A; Power Dissipation Pd:50W; Pulse Current Idm:21A; Termination Type:Through Hole; Transistor Type:MOSFET; Typ Voltage Vds:500V; Typ Voltage Vgs th:5V; Voltage Vgs Rds on Measurement:10V; SVHC (Additional):Bis (2-ethyl(hexyl)phthalate) (DEHP)
***emi
N-Channel QFET® MOSFET 500V, 9A, 800mΩ
*** Electronics
N-CHANNEL POWER MOSFET
***rchild Semiconductor
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
***emi
N-Channel Power MOSFET, UniFETTM II, 600 V, 12 A, 650 mΩ, TO-220F
***ure Electronics
FDPF12N60NZ Series 600 V 12 A 650 mOhm N-Ch PowerTrench® MOSFET - TO-220F
***Yang
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***enic
600V 12A 39W 650m´Î@10V6A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 12A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET, N CH, 600V, 0.53OHM, 12A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:39W; MSL:- ;RoHS Compliant: Yes
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***itex
Transistor: N-MOSFET; unipolar; 600V; 10A; 0.75ohm; 35W; -55+150 deg.C; THT; TO220FP
***icroelectronics
N-channel 600 V, 0.65 Ohm typ., 10 A Zener-protected SuperMESH Power MOSFET in TO-220FP package
*** Source Electronics
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 600V 10A TO220FP
***fin
Transistor NPN MOS STP10NK60/STP10NK60ZFP SGS THOMSON Ampere=10 V=600 TO220
***ure Electronics
N-Channel 600 V 0.75 Ohm Flange Mount SuperMESH™ Power MosFet - TO-220-FP
***enic
600V 10A 35W 750m´Î@10V4.5A 4.5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***ark
N CHANNEL MOSFET, 600V, 10A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:10A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:-RoHS Compliant: Yes
***roFlash
Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-channel 620 V, 0.68 Ohm typ., 8.4 A SuperMESH3(TM) Power MOSFET in TO-220FP package
*** Electronics
STMICROELECTRONICS STF10N62K3 Power MOSFET, N Channel, 8.4 A, 620 V, 0.68 ohm, 10 V, 3.75 V
***et
Trans MOSFET N-CH 620V 8.4A 3-Pin(3+Tab) TO-220FP Tube
***ponent Stockers USA
8.4 A 620 V 0.75 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 8.4A I(D), 620V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N CH, 620V, 8.4A, TO 220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:8.4A; Drain Source Voltage Vds:620V; On Resistance Rds(on):0.68ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:30W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +150°C
***icroelectronics
N-channel 600 V, 0.53 Ohm, 10 A Zener-protected SuperMESH(TM)2 Power MOSFET in a TO-220FP package
***ical
Trans MOSFET N-CH 600V 10A 3-Pin (3+Tab) TO-220FP Tube
***ure Electronics
N-Channel 650 V 0.64 O SuperMESH™ Power MosFet - TO-220FP
***ponent Stockers USA
10 A 600 V 0.64 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***r Electronics
Power Field-Effect Transistor, 10A I(D), 600V, 0.64ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N CH, 650V, 10A, TO220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):530mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:35W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:10A; Package / Case:TO-220FP; Power Dissipation Pd:35W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:600V; Voltage Vgs Max:3.75V; Voltage Vgs Rds on Measurement:10V
Teil # Mfg. Beschreibung Aktie Preis
FDPF12N50UT
DISTI # 26962129		ON Semiconductor500V, 10A, 0.8 OHM, N-CHANNEL5000
  • 1000:$0.9750
FDPF12N50UT
DISTI # FDPF12N50UT-ND		ON SemiconductorMOSFET N-CH 500V TO-220F-3
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$1.2441
FDPF12N50UT
DISTI # FDPF12N50UT		ON SemiconductorTrans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FDPF12N50UT)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$1.0189
  • 2000:$1.0119
  • 4000:$0.9999
  • 6000:$0.9869
  • 10000:$0.9619
FDPF12N50UTFairchild Semiconductor CorporationPower Field-Effect Transistor, 10A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		15000
  • 1000:$1.1500
  • 500:$1.2100
  • 100:$1.2600
  • 25:$1.3100
  • 1:$1.4100
FDPF12N50UT
DISTI # 512-FDPF12N50UT		ON SemiconductorMOSFET 500V 10A N-Chan Ultra FRFET
RoHS: Compliant		955
  • 1:$2.3000
  • 10:$1.9500
  • 100:$1.5600
  • 500:$1.3700
  • 1000:$1.1400
  • 2000:$1.0600
  • 5000:$1.0200
FDPF12N50UT
DISTI # 8648587P		ON SemiconductorMOSFET N-CH 500V 10A UNIFET ULTRA TO220F, TU345
  • 50:£1.2780
  • 100:£1.1680
  • 250:£1.1020
  • 500:£1.0740
FDPF12N50UT
DISTI # 8648587		ON SemiconductorMOSFET N-CH 500V 10A UNIFET ULTRA TO220F, PK105
  • 5:£1.5620
  • 50:£1.2780
  • 100:£1.1680
  • 250:£1.1020
  • 500:£1.0740
Bild Teil # Beschreibung
TL064IPWR

Mfr.#: TL064IPWR

OMO.#: OMO-TL064IPWR

 Operational Amplifiers - Op Amps QuadLowPwr JFET-Inpt General-P Operat Amp
IRS2092STRPBF

Mfr.#: IRS2092STRPBF

OMO.#: OMO-IRS2092STRPBF

 Audio Amplifiers 200V Dig Aud Drvr
IRS20957STRPBF

Mfr.#: IRS20957STRPBF

OMO.#: OMO-IRS20957STRPBF

 Audio Amplifiers Class D Aud Drvr IC
AUIRS2092STR

Mfr.#: AUIRS2092STR

OMO.#: OMO-AUIRS2092STR

 Gate Drivers AUTO HI VTG 100V 500ns 800kHz
STF12N50DM2

Mfr.#: STF12N50DM2

OMO.#: OMO-STF12N50DM2

 MOSFET N-channel 500 V, 0.299 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a TO-220FP package
STB45N65M5

Mfr.#: STB45N65M5

OMO.#: OMO-STB45N65M5

 MOSFET N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS
FQP19N20

Mfr.#: FQP19N20

OMO.#: OMO-FQP19N20

 MOSFET 200V N-Channel QFET
STF13NM60N

Mfr.#: STF13NM60N

OMO.#: OMO-STF13NM60N

 MOSFET N-CH 600V 11A MDMESH Power MDmesh
TL064IPWR

Mfr.#: TL064IPWR

OMO.#: OMO-TL064IPWR-TEXAS-INSTRUMENTS

 Operational Amplifiers - Op Amps QuadLowPwr JFET-Inpt General-P Operat Amp
FQP19N20

Mfr.#: FQP19N20

OMO.#: OMO-FQP19N20-ON-SEMICONDUCTOR

 MOSFET N-CH 200V 19.4A TO-220
Verfügbarkeit
Aktie:
898
Auf Bestellung:
2881
Menge eingeben:
Der aktuelle Preis von FDPF12N50UT dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,51 $
1,51 $
10
1,28 $
12,80 $
100
1,02 $
102,00 $
500
0,90 $
450,00 $
1000
0,74 $
745,00 $
2000
0,69 $
1 388,00 $
5000
0,67 $
3 340,00 $
10000
0,64 $
6 420,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
Beginnen mit
Neueste Produkte
  • FAN6224 SR Controller
    FAN6224 SR Controller
    FAN6224 is the first SR high- and low-side controller device in ON Semiconductor's mWSaver™ technology series.
  • Bluetooth® Low Energy Switch
    Bluetooth® Low Energy Switch
    ON Semiconductor's energy harvesting Bluetooth® Low Energy switch is a complete reference design for energy harvesting applications.
  • NCP716B Linear Voltage Regulator
    NCP716B Linear Voltage Regulator
    ON Semiconductor's NCP716B is a 150 mA LDO linear voltage regulator. It is a very stable and accurate device with ultra−low ground current consumption (4.7 mA over the full output load range)
  • LB1846MC Motor Driver IC
    LB1846MC Motor Driver IC
    The LB1846MC is a low-voltage/low saturation voltage type bidirectional motor driver that is optimal for use as a 2-phase stepping motor driver.
  • Compare FDPF12N50UT
    Compare FDPF12N50UT
    FDPF12N50CT vs FDPF12N50FT vs FDPF12N50FTTK12A50D
  • MEMS Motion Tracking Modules
    MEMS Motion Tracking Modules
    ON Semiconductor's FMT1000 series are industrial grade module family includes accelerometers, gyroscopes, magnetometers, 10 ppm crystal, and a dedicated MCU.
More Newest Products
Top