BSM180D12P3C007

BSM180D12P3C007
Mfr. #:
BSM180D12P3C007
Hersteller:
Rohm Semiconductor
Beschreibung:
SIC POWER MODULE
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSM180D12P3C007 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
BSM180D12P3C007 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
BSM180D, BSM180, BSM18, BSM1, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
Dual SiC N-Channel SiC Power Module, 180 A, 1200 V, 4-Pin C ROHM BSM180D12P3C007
***p One Stop Japan
Trans MOSFET N-CH SiC 1.2KV 180A Automotive 10-Pin Tray
***ical
Trans MOSFET N-CH SiC 1.2KV 180A 10-Pin Tray
***ukat
SiC-N-Ch-Half-Bridge+2xSBD 1200V 180A C-
***et Europe
SiC Power Module-1200V-180A
***i-Key
SIC POWER MODULE
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SiC Power Modules
ROHM Semiconductor SiC power modules are Half Bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These modules support high-frequency operation through reduced switching loss. The optimized design reduces stary inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.
Teil # Mfg. Beschreibung Aktie Preis
BSM180D12P3C007
DISTI # 33952734
ROHM SemiconductorBSM180D12P3C00712
  • 1:$866.2500
BSM180D12P3C007
DISTI # BSM180D12P3C007-ND
ROHM SemiconductorSIC POWER MODULE
RoHS: Compliant
Min Qty: 1
Container: Bulk
26In Stock
  • 1:$525.7100
BSM180D12P3C007
DISTI # C1S625901693441
ROHM SemiconductorTrans MOSFET N-CH SiC 1.2KV 180A Automotive 10-Pin Tray
RoHS: Compliant
12
  • 10:$601.0000
  • 5:$630.0000
  • 1:$693.0000
BSM180D12P3C007
DISTI # BSM180D12P3C007
ROHM SemiconductorSiC Power Module-1200V-180A (Alt: BSM180D12P3C007)
RoHS: Compliant
Min Qty: 1
Europe - 8
  • 1:€490.1900
BSM180D12P3C007
DISTI # BSM180D12P3C007
ROHM SemiconductorSiC Power Module-1200V-180A - Trays (Alt: BSM180D12P3C007)
RoHS: Compliant
Min Qty: 12
Container: Tray
Americas - 0
    BSM180D12P3C007
    DISTI # 755-BSM180D12P3C007
    ROHM SemiconductorDiscrete Semiconductor Modules Half Bridge Module SiC UMOSFET & SBD
    RoHS: Compliant
    31
    • 1:$506.9700
    BSM180D12P3C007ROHM Semiconductor 9
    • 7:$693.0750
    • 5:$739.2800
    • 1:$808.5875
    BSM180D12P3C007
    DISTI # TMOSP12817
    ROHM SemiconductorSiC Power Module 180A 1200V
    RoHS: Compliant
    Stock DE - 16Stock HK - 0Stock US - 0
    • 12:$589.5700
    BSM180D12P3C007
    DISTI # BSM180D12P3C007
    ROHM SemiconductorSiC-N-Ch-Half-Bridge+2xSBD 1200V 180A C-
    RoHS: Compliant
    1
    • 1:€540.0000
    • 4:€480.0000
    • 8:€450.0000
    • 12:€435.0000
    BSM180D12P3C007ROHM SemiconductorDiscrete Semiconductor Modules Half Bridge Module SiC UMOSFET & SBD
    RoHS: Compliant
    Americas -
      BSM180D12P3C007ROHM SemiconductorRoHS(ship within 1day)12
      • 1:$509.7300
      • 10:$491.3900
      • 50:$476.7200
      • 100:$469.3900
      • 500:$465.7200
      • 1000:$462.0500
      Bild Teil # Beschreibung
      BSM180D12P3C007

      Mfr.#: BSM180D12P3C007

      OMO.#: OMO-BSM180D12P3C007

      Discrete Semiconductor Modules Half Bridge Module SiC UMOSFET & SBD
      BSM180D12P2C101

      Mfr.#: BSM180D12P2C101

      OMO.#: OMO-BSM180D12P2C101

      Discrete Semiconductor Modules Mod: 1200V 180A (no Diode)
      BSM180D12P3C007

      Mfr.#: BSM180D12P3C007

      OMO.#: OMO-BSM180D12P3C007-ROHM-SEMI

      SIC POWER MODULE
      BSM180D12P3C007 , TDZTR6

      Mfr.#: BSM180D12P3C007 , TDZTR6

      OMO.#: OMO-BSM180D12P3C007-TDZTR6-1190

      Neu und Original
      BSM180D12P2E002

      Mfr.#: BSM180D12P2E002

      OMO.#: OMO-BSM180D12P2E002-1190

      IPM Intelligent Power Module SIC-DMOSFET/SIC-SBD 204A 2500V 11-Pin Tray (Alt: BSM180D12P2E002)
      BSM180D12P2C101

      Mfr.#: BSM180D12P2C101

      OMO.#: OMO-BSM180D12P2C101-ROHM-SEMI

      Discrete Semiconductor Modules Mod: 1200V 180A (no Diode)
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1000
      Menge eingeben:
      Der aktuelle Preis von BSM180D12P3C007 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      741,48 $
      741,48 $
      10
      704,40 $
      7 044,03 $
      100
      667,33 $
      66 732,95 $
      500
      630,26 $
      315 127,85 $
      1000
      593,18 $
      593 181,80 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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