BSM180D12P2C101

BSM180D12P2C101
Mfr. #:
BSM180D12P2C101
Hersteller:
Rohm Semiconductor
Beschreibung:
Discrete Semiconductor Modules Mod: 1200V 180A (no Diode)
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSM180D12P2C101 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
BSM180D12P2C101 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Rohm Semiconductor
Produktkategorie
FETs - Arrays
Serie
BSM180D12P2C101
Produkt
Leistungshalbleitermodule
Typ
SiC-Leistungsmodul
Verpackung
Schüttgut
Montageart
Schraube
Betriebstemperaturbereich
- 40 C to + 150 C
Paket-Koffer
Modul
Betriebstemperatur
-40°C ~ 150°C (TJ)
Befestigungsart
*
Lieferanten-Geräte-Paket
Modul
Aufbau
Halbbrücke
FET-Typ
2 N-Channel (Half Bridge)
Leistung max
1130W
Drain-zu-Source-Spannung-Vdss
1200V (1.2kV)
Eingangskapazität-Ciss-Vds
23000pF @ 10V
FET-Funktion
Standard
Strom-Dauer-Drain-Id-25°C
180A
Rds-On-Max-Id-Vgs
-
Vgs-th-Max-Id
4V @ 35.2mA
Gate-Lade-Qg-Vgs
-
Tags
BSM180D, BSM180, BSM18, BSM1, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SiC Power Modules
ROHM Semiconductor SiC power modules are Half Bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These modules support high-frequency operation through reduced switching loss. The optimized design reduces stary inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.
Teil # Mfg. Beschreibung Aktie Preis
BSM180D12P2C101
DISTI # BSM180D12P2C101-ND
ROHM SemiconductorMOSFET 2N-CH 1200V 180A MODULE
RoHS: Compliant
Min Qty: 1
Container: Bulk
On Order
  • 10:$418.8610
  • 1:$434.9700
BSM180D12P2C101
DISTI # BSM180D12P2C101
ROHM SemiconductorTrans SiC MOSFET N-CH 1.2KV 180A 10-Pin Case C Tray - Bulk (Alt: BSM180D12P2C101)
RoHS: Compliant
Min Qty: 12
Container: Bulk
Americas - 3
  • 12:$463.3900
  • 24:$434.4900
  • 48:$408.9900
  • 72:$386.3900
  • 120:$375.9900
BSM180D12P2C101
DISTI # 755-BSM180D12P2C101
ROHM SemiconductorDiscrete Semiconductor Modules Mod: 1200V 180A (no Diode)
RoHS: Compliant
0
  • 1:$434.9700
  • 5:$418.8700
BSM180D12P2C101
DISTI # 2345471
ROHM SemiconductorMODULE, POWER, SIC, 1200V, 180A
RoHS: Compliant
1
  • 1:£379.0000
Bild Teil # Beschreibung
BSM180D12P3C007

Mfr.#: BSM180D12P3C007

OMO.#: OMO-BSM180D12P3C007

Discrete Semiconductor Modules Half Bridge Module SiC UMOSFET & SBD
BSM180D12P2C101

Mfr.#: BSM180D12P2C101

OMO.#: OMO-BSM180D12P2C101

Discrete Semiconductor Modules Mod: 1200V 180A (no Diode)
BSM180D12P3C007

Mfr.#: BSM180D12P3C007

OMO.#: OMO-BSM180D12P3C007-ROHM-SEMI

SIC POWER MODULE
BSM180D12P3C007 , TDZTR6

Mfr.#: BSM180D12P3C007 , TDZTR6

OMO.#: OMO-BSM180D12P3C007-TDZTR6-1190

Neu und Original
BSM180D12P2E002

Mfr.#: BSM180D12P2E002

OMO.#: OMO-BSM180D12P2E002-1190

IPM Intelligent Power Module SIC-DMOSFET/SIC-SBD 204A 2500V 11-Pin Tray (Alt: BSM180D12P2E002)
BSM180D12P2C101

Mfr.#: BSM180D12P2C101

OMO.#: OMO-BSM180D12P2C101-ROHM-SEMI

Discrete Semiconductor Modules Mod: 1200V 180A (no Diode)
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3500
Menge eingeben:
Der aktuelle Preis von BSM180D12P2C101 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
563,98 $
563,98 $
10
535,79 $
5 357,86 $
100
507,59 $
50 758,65 $
500
479,39 $
239 693,65 $
1000
451,19 $
451 188,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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