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IPB015N08N5ATMA1

IPB015N08N5ATMA1
Mfr. #:
IPB015N08N5ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
RF Bipolar Transistors MOSFET N-Ch 80V 180A D2PAK-2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB015N08N5ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPB015N08N5ATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Verpackung
Spule
Teil-Aliasnamen
IPB015N08N5 SP001226034
Gewichtseinheit
0.056438 oz
Montageart
SMD/SMT
Paket-Koffer
TO-263-7
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
375 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
28 ns
Anstiegszeit
32 ns
Vgs-Gate-Source-Spannung
+/- 20 V
ID-Dauer-Drain-Strom
180 A
Vds-Drain-Source-Breakdown-Voltage
80 V
Vgs-th-Gate-Source-Threshold-Voltage
2.2 V
Rds-On-Drain-Source-Widerstand
1.8 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
83 ns
Typische-Einschaltverzögerungszeit
33 ns
Qg-Gate-Ladung
178 nC
Vorwärts-Transkonduktanz-Min
123 S
Kanal-Modus
Erweiterung
Tags
IPB015N08, IPB015, IPB01, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 80V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
***ure Electronics
IPB015N08N5 Series 80 V 180 A OptiMOS™ 5 Power Transistor - PG-TO-263-7
***ark
Mosfet, N-Ch, 80V, 180A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.0011Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Teil # Mfg. Beschreibung Aktie Preis
IPB015N08N5ATMA1
DISTI # IPB015N08N5ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 80V 120A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		On Order
  • 1000:$3.5163
IPB015N08N5ATMA1
DISTI # IPB015N08N5ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 80V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 500:$4.2944
  • 100:$5.3033
  • 10:$6.4670
  • 1:$7.2400
IPB015N08N5ATMA1
DISTI # IPB015N08N5ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 80V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 500:$4.2944
  • 100:$5.3033
  • 10:$6.4670
  • 1:$7.2400
IPB015N08N5ATMA1
DISTI # IPB015N08N5ATMA1		Infineon Technologies AGTrans MOSFET N-CH 80V 180A 7-Pin TO-263 T/R - Tape and Reel (Alt: IPB015N08N5ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$3.1900
  • 2000:$3.0900
  • 4000:$2.9900
  • 6000:$2.8900
  • 10000:$2.8900
IPB015N08N5ATMA1
DISTI # SP001226034		Infineon Technologies AGTrans MOSFET N-CH 80V 180A 7-Pin TO-263 T/R (Alt: SP001226034)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 1000:€3.0900
  • 2000:€2.8900
  • 4000:€2.7900
  • 6000:€2.5900
  • 10000:€2.3900
IPB015N08N5ATMA1
DISTI # 13AC9020		Infineon Technologies AGMOSFET, N-CH, 80V, 180A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0011ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes0
  • 500:$3.8000
  • 250:$4.2300
  • 100:$4.4600
  • 50:$4.6900
  • 25:$4.9100
  • 10:$5.1400
  • 1:$6.0500
IPB015N08N5ATMA1
DISTI # 726-IPB015N08N5ATMA1		Infineon Technologies AGMOSFET N-Ch 80V 180A D2PAK-2
RoHS: Compliant		44
  • 1:$6.0500
  • 10:$5.1400
  • 100:$4.4600
  • 250:$4.2300
  • 500:$3.8000
  • 1000:$3.2000
IPB015N08N5ATMA1
DISTI # 2725833		Infineon Technologies AGMOSFET, N-CH, 80V, 180A, TO-263
RoHS: Compliant		0
  • 500:$6.8500
  • 100:$8.4600
  • 10:$10.3100
  • 1:$11.5400
IPB015N08N5ATMA1
DISTI # 2725833		Infineon Technologies AGMOSFET, N-CH, 80V, 180A, TO-263
RoHS: Compliant		0
  • 500:£2.9000
  • 250:£3.2300
  • 100:£3.4000
  • 10:£3.9300
  • 1:£5.1000
Bild Teil # Beschreibung
IPB015N04N G

Mfr.#: IPB015N04N G

OMO.#: OMO-IPB015N04N-G

 MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS 3
IPB015N04NGATMA1

Mfr.#: IPB015N04NGATMA1

OMO.#: OMO-IPB015N04NGATMA1

 MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS 3
IPB015N04LGATMA1

Mfr.#: IPB015N04LGATMA1

OMO.#: OMO-IPB015N04LGATMA1

 MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS 3
IPB015N04L

Mfr.#: IPB015N04L

OMO.#: OMO-IPB015N04L-1190

 Neu und Original
IPB015N04LGATMA1

Mfr.#: IPB015N04LGATMA1

OMO.#: OMO-IPB015N04LGATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 40V 120A TO263-3
IPB015N04NG

Mfr.#: IPB015N04NG

OMO.#: OMO-IPB015N04NG-1190

 Trans MOSFET N-CH 40V 120A 3-Pin TO-263 T/R (Alt: SP000391522)
IPB015N04NGATMA1

Mfr.#: IPB015N04NGATMA1

OMO.#: OMO-IPB015N04NGATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 40V 120A TO263-3
IPB015N08N5

Mfr.#: IPB015N08N5

OMO.#: OMO-IPB015N08N5-1190

 N-CH 80V 180A 1,5mOhm TO263-7
IPB015N08N5 015N08N5

Mfr.#: IPB015N08N5 015N08N5

OMO.#: OMO-IPB015N08N5-015N08N5-1190

 Neu und Original
IPB015N08N5ATMA1

Mfr.#: IPB015N08N5ATMA1

OMO.#: OMO-IPB015N08N5ATMA1-INFINEON-TECHNOLOGIES

 RF Bipolar Transistors MOSFET N-Ch 80V 180A D2PAK-2
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5500
Menge eingeben:
Der aktuelle Preis von IPB015N08N5ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
4,32 $
4,32 $
10
4,11 $
41,08 $
100
3,89 $
389,19 $
500
3,68 $
1 837,85 $
1000
3,46 $
3 459,50 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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