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SI4800BDY-T1-E3

SI4800BDY-T1-E3
Mfr. #:
SI4800BDY-T1-E3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 30V 6.5A 8-SOIC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4800BDY-T1-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SI4800BDY-T1-E3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Vishay Siliconix
Produktkategorie
FETs - Einzeln
Serie
GrabenFETR
Verpackung
Digi-ReelR Alternative Verpackung
Teil-Aliasnamen
SI4800BDY-T1
Gewichtseinheit
0.006596 oz
Montageart
SMD/SMT
Paket-Koffer
8-SOIC (0.154", 3.90mm Width)
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
1 Channel
Lieferanten-Geräte-Paket
8-SO
Aufbau
Single
FET-Typ
MOSFET N-Kanal, Metalloxid
Leistung max
1.3W
Transistor-Typ
1 N-Channel
Drain-zu-Source-Spannung-Vdss
30V
Eingangskapazität-Ciss-Vds
-
FET-Funktion
Standard
Strom-Dauer-Drain-Id-25°C
6.5A (Ta)
Rds-On-Max-Id-Vgs
18.5 mOhm @ 9A, 10V
Vgs-th-Max-Id
1.8V @ 250μA
Gate-Lade-Qg-Vgs
13nC @ 5V
Pd-Verlustleistung
1.3 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
12 ns
Anstiegszeit
12 ns
Vgs-Gate-Source-Spannung
25 V
ID-Dauer-Drain-Strom
6.5 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Widerstand
18.5 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
32 ns
Typische-Einschaltverzögerungszeit
7 ns
Kanal-Modus
Erweiterung
Tags
SI4800BDY-T1-E3, SI4800BDY-T1-E, SI4800BDY-T1, SI4800BDY-T, SI4800BDY, SI4800BD, SI4800B, SI4800, SI480, SI48, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SI4800BDY-T1-E3 N-channel MOSFET Transistor; 6.5 A; 30 V; 8-Pin SOIC
***ical
Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R
***nell
N CHANNEL MOSFET, 30V, 9A, SOIC
***ronik
N-CH 30V 9A 19mOhm SO-8 RoHSconf
***ure Electronics
N-CH REDUCED QG, FAST SWITCHING MOSF
***ment14 APAC
N CHANNEL MOSFET, 30V, 9A, SOIC; Transis; N CHANNEL MOSFET, 30V, 9A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):18.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; No. of Pins:8
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI4800BDY-T1-E3
DISTI # V72:2272_09216568		Vishay IntertechnologiesTrans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R
RoHS: Compliant		390
  • 250:$0.4116
  • 100:$0.4782
  • 25:$0.5928
  • 10:$0.5957
  • 1:$0.6897
SI4800BDY-T1-E3
DISTI # SI4800BDY-T1-E3CT-ND		Vishay SiliconixMOSFET N-CH 30V 6.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4565In Stock
  • 1000:$0.3484
  • 500:$0.4355
  • 100:$0.5880
  • 10:$0.7620
  • 1:$0.8700
SI4800BDY-T1-E3
DISTI # SI4800BDY-T1-E3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 6.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4565In Stock
  • 1000:$0.3484
  • 500:$0.4355
  • 100:$0.5880
  • 10:$0.7620
  • 1:$0.8700
SI4800BDY-T1-E3
DISTI # SI4800BDY-T1-E3TR-ND		Vishay SiliconixMOSFET N-CH 30V 6.5A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 2500:$0.3066
SI4800BDY-T1-E3
DISTI # 30150432		Vishay IntertechnologiesTrans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R
RoHS: Compliant		390
  • 250:$0.4116
  • 100:$0.4782
  • 25:$0.5928
  • 21:$0.5957
SI4800BDY-T1-E3
DISTI # SI4800BDY-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R - Cut TR (SOS) (Alt: SI4800BDY-T1-E3)
RoHS: Not Compliant
Min Qty: 1
Container: Cut Tape		Americas - 360
  • 1:$0.3169
  • 25:$0.3159
  • 62:$0.3149
  • 125:$0.3139
  • 312:$0.3129
  • 625:$0.3129
  • 1250:$0.3119
SI4800BDY-T1-E3
DISTI # SI4800BDY-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4800BDY-T1-E3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 2500
  • 2500:$0.2999
  • 5000:$0.2989
  • 10000:$0.2979
  • 15000:$0.2979
  • 25000:$0.2969
SI4800BDY-T1-E3
DISTI # SI4800BDY-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R (Alt: SI4800BDY-T1-E3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 2500:€0.3999
  • 5000:€0.2729
  • 10000:€0.2349
  • 15000:€0.2169
  • 25000:€0.2019
SI4800BDY-T1-E3
DISTI # SI4800BDY-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R (Alt: SI4800BDY-T1-E3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    SI4800BDY-T1-E3
    DISTI # 06J7845    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 06J7845)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Ammo Pack    		Americas - 0
    • 1:$0.8800
    • 10:$0.7210
    • 25:$0.6650
    • 50:$0.6090
    • 100:$0.5530
    • 250:$0.5150
    • 500:$0.4760
    SI4800BDY-T1-E3
    DISTI # 06J7845    		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 9A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):18.5mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V,No. of Pins:8Pins, RoHS Compliant: Yes651
    • 1:$0.4550
    • 10:$0.4550
    • 25:$0.4550
    • 50:$0.4170
    • 100:$0.4170
    • 250:$0.4170
    • 500:$0.3850
    SI4800BDY-T1-E3.
    DISTI # 28AC2144    		Vishay IntertechnologiesN-CH REDUCED QG, FAST SWITCHING MOSFET , ROHS COMPLIANT: NO2500
    • 1:$0.3000
    • 5000:$0.2990
    • 10000:$0.2980
    • 25000:$0.2970
    SI4800BDY-T1-E3
    DISTI # 70026225    		Vishay SiliconixSI4800BDY-T1-E3 N-channel MOSFET Transistor,6.5 A,30 V,8-Pin SOIC
    RoHS: Compliant    		0
    • 2500:$0.3700
    • 5000:$0.3600
    • 7500:$0.3300
    SI4800BDY-T1-E3/BKN
    DISTI # 70026360    		Vishay SiliconixN-Channel REDUCED QG,Fast Switching MOSFET
    RoHS: Compliant    		0
    • 1:$0.6800
    • 100:$0.6500
    • 250:$0.6100
    • 500:$0.5800
    • 1000:$0.5500
    SI4800BDY-T1-E3
    DISTI # 781-SI4800BDY-E3    		Vishay IntertechnologiesMOSFET 30V 9A 2.5W
    RoHS: Compliant    		2984
    • 1:$0.8800
    • 10:$0.7210
    • 100:$0.5530
    • 500:$0.4760
    • 1000:$0.3750
    • 2500:$0.3500
    SI4800BDY-T1-E3Vishay Siliconix6500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET2089
    • 953:$0.1875
    • 201:$0.2100
    • 1:$0.6000
    SI4800BDY-T1-E3Vishay Siliconix6500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET20
    • 9:$0.4500
    • 1:$0.6000
    SI4800BDY-T1-E3Vishay Intertechnologies 2568
      SI4800BDY-T1-E3Vishay Intertechnologies 1732
        SI4800BDY-T1-E3TR-NDVishay Intertechnologies 1732
          SI4800BDY-T1-E3Vishay Siliconix 18937
            SI4800BDY-T1-E3
            DISTI # SI4800BDY-E3            		Vishay IntertechnologiesTransistor: N-MOSFET,unipolar,30V,7A,2.5W,SO83509
            • 5:$0.3300
            • 25:$0.3100
            • 100:$0.2700
            • 500:$0.2300
            • 2500:$0.2000
            SI4800BDYT1E3Vishay Intertechnologies 
            RoHS: Compliant            		Europe - 1575
              SI4800BDY-T1-E3Vishay IntertechnologiesINSTOCK7500
                SI4800BDY-T1-E3Vishay IntertechnologiesMOSFET 30V 9A 2.5WAmericas - 2500
                  SI4800BDY-T1-E3
                  DISTI # C1S806000590040                  		Vishay IntertechnologiesMOSFETs
                  RoHS: Compliant                  		390
                  • 250:$0.4148
                  • 100:$0.4795
                  • 25:$0.5911
                  • 10:$0.5934
                  Bild Teil # Beschreibung
                  SI4800BDY-T1-E3

                  Mfr.#: SI4800BDY-T1-E3

                  OMO.#: OMO-SI4800BDY-T1-E3

                  		 MOSFET 30V 9A 2.5W
                  SI4800BDY-T1-E3-CUT TAPE

                  Mfr.#: SI4800BDY-T1-E3-CUT TAPE

                  OMO.#: OMO-SI4800BDY-T1-E3-CUT-TAPE-1190

                  		 Neu und Original
                  SI4800BDY-T1-GE3-CUT TAPE

                  Mfr.#: SI4800BDY-T1-GE3-CUT TAPE

                  OMO.#: OMO-SI4800BDY-T1-GE3-CUT-TAPE-1190

                  		 Neu und Original
                  SI4800B

                  Mfr.#: SI4800B

                  OMO.#: OMO-SI4800B-1190

                  		 Neu und Original
                  SI4800BCY-T1-E3

                  Mfr.#: SI4800BCY-T1-E3

                  OMO.#: OMO-SI4800BCY-T1-E3-1190

                  		 Neu und Original
                  SI4800BDY-T

                  Mfr.#: SI4800BDY-T

                  OMO.#: OMO-SI4800BDY-T-1190

                  		 Neu und Original
                  SI4800BDY-T1

                  Mfr.#: SI4800BDY-T1

                  OMO.#: OMO-SI4800BDY-T1-1190

                  		 Neu und Original
                  SI4800BDY-T1-E

                  Mfr.#: SI4800BDY-T1-E

                  OMO.#: OMO-SI4800BDY-T1-E-1190

                  		 Neu und Original
                  SI4800BDY-T1-E3 SOP8

                  Mfr.#: SI4800BDY-T1-E3 SOP8

                  OMO.#: OMO-SI4800BDY-T1-E3-SOP8-1190

                  		 Neu und Original
                  SI4800BDY-T1-E3.

                  Mfr.#: SI4800BDY-T1-E3.

                  OMO.#: OMO-SI4800BDY-T1-E3--1190

                  		 Transistor Polarity:N Channel, Continuous Drain Current Id:6.5A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0155ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.8V, Power Di
                  Verfügbarkeit
                  Aktie:
                  Available
                  Auf Bestellung:
                  3000
                  Menge eingeben:
                  Der aktuelle Preis von SI4800BDY-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
                  Referenzpreis (USD)
                  Menge
                  Stückpreis
                  ext. Preis
                  1
                  0,28 $
                  0,28 $
                  10
                  0,27 $
                  2,67 $
                  100
                  0,25 $
                  25,31 $
                  500
                  0,24 $
                  119,55 $
                  1000
                  0,22 $
                  225,00 $
                  Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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