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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SI4800BDY-T1-E3/BKN DISTI # 70026360 | Vishay Siliconix | N-Channel REDUCED QG,Fast Switching MOSFET RoHS: Compliant | 0 |
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| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: SI4800BDY-T1-E3 OMO.#: OMO-SI4800BDY-T1-E3 |
MOSFET 30V 9A 2.5W |
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Mfr.#: SI4800BDY-T1-GE3 OMO.#: OMO-SI4800BDY-T1-GE3 |
MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V |
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Mfr.#: SI4800BDY-T1-E3-CUT TAPE |
Neu und Original |
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Mfr.#: SI4800BDY-T1-GE3-CUT TAPE |
Neu und Original |
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Mfr.#: SI4800BDY-T1 OMO.#: OMO-SI4800BDY-T1-1190 |
Neu und Original |
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Mfr.#: SI4800BDY-T1-E OMO.#: OMO-SI4800BDY-T1-E-1190 |
Neu und Original |
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Mfr.#: SI4800BDY-T1-E3 OMO.#: OMO-SI4800BDY-T1-E3-VISHAY |
MOSFET N-CH 30V 6.5A 8-SOIC |
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Mfr.#: SI4800BDY-T1-E3. OMO.#: OMO-SI4800BDY-T1-E3--1190 |
Transistor Polarity:N Channel, Continuous Drain Current Id:6.5A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0155ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.8V, Power Di |
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Mfr.#: SI4800BDY-T1-GE3 OMO.#: OMO-SI4800BDY-T1-GE3-VISHAY |
MOSFET N-CH 30V 6.5A 8-SOIC |
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Mfr.#: SI4800BDY-TI-E3 OMO.#: OMO-SI4800BDY-TI-E3-1190 |
Neu und Original |