OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

SI4800BDY-T1-GE3

SI4800BDY-T1-GE3
Mfr. #:
SI4800BDY-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 30V 6.5A 8-SOIC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4800BDY-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SI4800BDY-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
VISHAY
Produktkategorie
FETs - Einzeln
Verpackung
Spule
Teil-Aliasnamen
SI4800BDY-GE3
Gewichtseinheit
0.006596 oz
Montageart
SMD/SMT
Paket-Koffer
SOIC-Narrow-8
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
1.3 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
12 ns
Anstiegszeit
12 ns
Vgs-Gate-Source-Spannung
25 V
ID-Dauer-Drain-Strom
6.5 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Widerstand
18.5 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
32 ns
Typische-Einschaltverzögerungszeit
7 ns
Qg-Gate-Ladung
13 nC
Kanal-Modus
Erweiterung
Tags
SI4800BDY-T1, SI4800BDY-T, SI4800BDY, SI4800BD, SI4800B, SI4800, SI480, SI48, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R
***ure Electronics
N-CH REDUCED QG, FAST SWITCHING MOSF
***ment14 APAC
N CHANNEL MOSFET, 30V, 9A, SOIC; Transis; N CHANNEL MOSFET, 30V, 9A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:25V; Threshold Voltage Vgs Typ:25V
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI4800BDY-T1-GE3
DISTI # V72:2272_09216570		Vishay IntertechnologiesTrans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R
RoHS: Compliant		2492
  • 1000:$0.3323
  • 500:$0.4074
  • 250:$0.4273
  • 100:$0.4748
  • 25:$0.5960
  • 10:$0.5985
  • 1:$0.6943
SI4800BDY-T1-GE3
DISTI # SI4800BDY-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 6.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4727In Stock
  • 1000:$0.3484
  • 500:$0.4355
  • 100:$0.5880
  • 10:$0.7620
  • 1:$0.8700
SI4800BDY-T1-GE3
DISTI # SI4800BDY-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 6.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4727In Stock
  • 1000:$0.3484
  • 500:$0.4355
  • 100:$0.5880
  • 10:$0.7620
  • 1:$0.8700
SI4800BDY-T1-GE3
DISTI # SI4800BDY-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 6.5A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 2500:$0.3066
SI4800BDY-T1-GE3
DISTI # 25790146		Vishay IntertechnologiesTrans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R
RoHS: Compliant		2492
  • 1000:$0.3323
  • 500:$0.4074
  • 250:$0.4273
  • 100:$0.4748
  • 25:$0.5960
  • 20:$0.5985
SI4800BDY-T1-GE3
DISTI # SI4800BDY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4800BDY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.3219
  • 5000:$0.3129
  • 10000:$0.2999
  • 15000:$0.2919
  • 25000:$0.2839
SI4800BDY-T1-GE3
DISTI # SI4800BDY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R (Alt: SI4800BDY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 2500:€0.3619
  • 5000:€0.2469
  • 10000:€0.2129
  • 15000:€0.1959
  • 25000:€0.1829
SI4800BDY-T1-GE3
DISTI # 16P3753		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 9A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):30mohm,Rds(on) Test Voltage Vgs:25V,Threshold Voltage Vgs:25V,No. of Pins:8Pins , RoHS Compliant: Yes0
  • 1:$0.8800
  • 10:$0.7210
  • 25:$0.6650
  • 50:$0.6090
  • 100:$0.5530
  • 250:$0.5150
  • 500:$0.4760
SI4800BDY-T1-GE3.
DISTI # 16AC0256		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):30mohm,Rds(on) Test Voltage Vgs:25V,Threshold Voltage Vgs:25V,Power Dissipation Pd:1.3W,No. of Pins:8Pins , RoHS Compliant: No0
  • 1:$0.3220
  • 5000:$0.3130
  • 10000:$0.3000
  • 15000:$0.2920
  • 25000:$0.2840
SI4800BDY-T1-GE3
DISTI # 781-SI4800BDY-T1-GE3		Vishay IntertechnologiesMOSFET 30V 9.0A 2.5W 18.5mohm @ 10V
RoHS: Compliant		154
  • 1:$0.8800
  • 10:$0.7210
  • 100:$0.5530
  • 500:$0.4760
  • 1000:$0.3750
  • 2500:$0.3500
SI4800BDYT1GE3Vishay Intertechnologies 
RoHS: Compliant		Europe - 2500
    SI4800BDY-T1-GE3
    DISTI # C1S803603715371    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R
    RoHS: Compliant    		2492
    • 250:$0.4273
    • 100:$0.4748
    • 25:$0.5960
    • 10:$0.5985
    Bild Teil # Beschreibung
    SI4800BDY-T1-GE3

    Mfr.#: SI4800BDY-T1-GE3

    OMO.#: OMO-SI4800BDY-T1-GE3

    		 MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V
    SI4800BDY-T1-E3-CUT TAPE

    Mfr.#: SI4800BDY-T1-E3-CUT TAPE

    OMO.#: OMO-SI4800BDY-T1-E3-CUT-TAPE-1190

    		 Neu und Original
    SI4800BDY-T1-GE3-CUT TAPE

    Mfr.#: SI4800BDY-T1-GE3-CUT TAPE

    OMO.#: OMO-SI4800BDY-T1-GE3-CUT-TAPE-1190

    		 Neu und Original
    SI4800BDY-T

    Mfr.#: SI4800BDY-T

    OMO.#: OMO-SI4800BDY-T-1190

    		 Neu und Original
    SI4800BDY-T1

    Mfr.#: SI4800BDY-T1

    OMO.#: OMO-SI4800BDY-T1-1190

    		 Neu und Original
    SI4800BDY-T1-E

    Mfr.#: SI4800BDY-T1-E

    OMO.#: OMO-SI4800BDY-T1-E-1190

    		 Neu und Original
    SI4800BDY-T1-E3

    Mfr.#: SI4800BDY-T1-E3

    OMO.#: OMO-SI4800BDY-T1-E3-VISHAY

    		 MOSFET N-CH 30V 6.5A 8-SOIC
    SI4800BDY-T1-E3 SOP8

    Mfr.#: SI4800BDY-T1-E3 SOP8

    OMO.#: OMO-SI4800BDY-T1-E3-SOP8-1190

    		 Neu und Original
    SI4800BDY-T1-E3.

    Mfr.#: SI4800BDY-T1-E3.

    OMO.#: OMO-SI4800BDY-T1-E3--1190

    		 Transistor Polarity:N Channel, Continuous Drain Current Id:6.5A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0155ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.8V, Power Di
    SI4800BDY-T1-GE3

    Mfr.#: SI4800BDY-T1-GE3

    OMO.#: OMO-SI4800BDY-T1-GE3-VISHAY

    		 MOSFET N-CH 30V 6.5A 8-SOIC
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3000
    Menge eingeben:
    Der aktuelle Preis von SI4800BDY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,31 $
    0,31 $
    10
    0,30 $
    2,96 $
    100
    0,28 $
    28,06 $
    500
    0,26 $
    132,50 $
    1000
    0,25 $
    249,40 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
    Beginnen mit
    Top