IXFK36N60P

IXFK36N60P
Mfr. #:
IXFK36N60P
Hersteller:
Littelfuse
Beschreibung:
IGBT Transistors MOSFET 600V 36A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFK36N60P Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IXFK36N60P Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
IXYS
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
IXFK36N60
Verpackung
Rohr
Gewichtseinheit
0.352740 oz
Montageart
Durchgangsloch
Handelsname
HyperFET
Paket-Koffer
TO-264-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
650 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
22 ns
Anstiegszeit
25 ns
Vgs-Gate-Source-Spannung
30 V
ID-Dauer-Drain-Strom
36 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Rds-On-Drain-Source-Widerstand
190 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
80 ns
Typische-Einschaltverzögerungszeit
30 ns
Vorwärts-Transkonduktanz-Min
39 S
Kanal-Modus
Erweiterung
Tags
IXFK36, IXFK3, IXFK, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Teil # Mfg. Beschreibung Aktie Preis
IXFK36N60P
DISTI # IXFK36N60P-ND
IXYS CorporationMOSFET N-CH 600V 36A TO-264
RoHS: Compliant
Min Qty: 25
Container: Tube
Temporarily Out of Stock
  • 25:$7.9744
IXFK36N60P
DISTI # 747-IXFK36N60P
IXYS CorporationMOSFET 600V 36A
RoHS: Compliant
23
  • 1:$11.1800
  • 10:$10.0700
  • 25:$8.3700
  • 50:$7.7800
  • 100:$7.6100
  • 250:$6.9400
  • 500:$6.3300
  • 1000:$6.0400
Bild Teil # Beschreibung
IXFK32N100X

Mfr.#: IXFK32N100X

OMO.#: OMO-IXFK32N100X

MOSFET 1000V 32A TO-264 Power MOSFET
IXFK360N10T

Mfr.#: IXFK360N10T

OMO.#: OMO-IXFK360N10T

MOSFET TRENCH HIPERFET PWR MOSFET 100V 360A
IXFK32N80P

Mfr.#: IXFK32N80P

OMO.#: OMO-IXFK32N80P

MOSFET 32 Amps 800V 0.27 Rds
IXFK32N100P

Mfr.#: IXFK32N100P

OMO.#: OMO-IXFK32N100P

MOSFET 32 Amps 1000V 0.32 Rds
IXFK320N17T2

Mfr.#: IXFK320N17T2

OMO.#: OMO-IXFK320N17T2-IXYS-CORPORATION

Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
IXFK34N80

Mfr.#: IXFK34N80

OMO.#: OMO-IXFK34N80-IXYS-CORPORATION

MOSFET N-CH 800V 34A TO-264AA
IXFK30N110P

Mfr.#: IXFK30N110P

OMO.#: OMO-IXFK30N110P-IXYS-CORPORATION

MOSFET N-CH 1100V 30A TO-264
IXFK32N100P

Mfr.#: IXFK32N100P

OMO.#: OMO-IXFK32N100P-IXYS-CORPORATION

Darlington Transistors MOSFET 32 Amps 1000V 0.32 Rds
IXFK32N80P

Mfr.#: IXFK32N80P

OMO.#: OMO-IXFK32N80P-IXYS-CORPORATION

Darlington Transistors MOSFET 32 Amps 800V 0.27 Rds
IXFK30N100Q2

Mfr.#: IXFK30N100Q2

OMO.#: OMO-IXFK30N100Q2-IXYS-CORPORATION

MOSFET N-CH 1000V 30A TO-264
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1500
Menge eingeben:
Der aktuelle Preis von IXFK36N60P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
9,06 $
9,06 $
10
8,61 $
86,07 $
100
8,15 $
815,40 $
500
7,70 $
3 850,50 $
1000
7,25 $
7 248,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
Beginnen mit
Neueste Produkte
Top