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2SD2012

2SD2012
Mfr. #:
2SD2012
Hersteller:
STMicroelectronics
Beschreibung:
Bipolar Transistors - BJT NPN Silcon Pwr Trans
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
2SD2012 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
2SD2012 Datasheet2SD2012 Datasheet (P4-P5)
ECAD Model:
Mehr Informationen:
2SD2012 Mehr Informationen 2SD2012 Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220F-3
Polarität des Transistors:
NPN
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
60 V
Kollektor- Basisspannung VCBO:
60 V
Emitter- Basisspannung VEBO:
7 V
Kollektor-Emitter-Sättigungsspannung:
0.4 V
Maximaler DC-Kollektorstrom:
3 A
Bandbreitenprodukt fT gewinnen:
3 MHz
Minimale Betriebstemperatur:
- 65 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
2SD2012
DC-Stromverstärkung hFE Max:
320
Höhe:
9.39 mm (Max)
Länge:
10.36 mm (Max)
Verpackung:
Rohr
Breite:
4.9 mm (Max)
Marke:
STMicroelectronics
DC-Kollektor/Basisverstärkung hfe Min:
20
Pd - Verlustleistung:
25 W
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
50
Unterkategorie:
Transistoren
Gewichtseinheit:
0.127339 oz
Tags
2SD2012, 2SD201, 2SD20, 2SD2, 2SD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Bipolar (Bjt) Single Transistor, Npn, 60 V, 3 Mhz, 25 W, 3 A, 20 Rohs Compliant: Yes
***ical
Trans GP BJT NPN 60V 3A 3-Pin (3+Tab) TO-220 Tube
***nell
TRANSISTOR, NPN, 60V, 3A, TO-220F; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:3MHz; Power Dissipation Pd:25W; DC Collector Current:3A; DC Current Gain hFE:20; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
Teil # Mfg. Beschreibung Aktie Preis
2SD2012(F,J)
DISTI # C1S751201102661		Toshiba America Electronic ComponentsGP BJT
RoHS: Not Compliant		6640
  • 2000:$0.9200
  • 1000:$0.9430
  • 500:$1.1200
  • 100:$1.1700
  • 50:$1.2300
2SD2012
DISTI # 497-5900-5-ND		STMicroelectronicsTRANS NPN 60V 3A TO-220F
RoHS: Compliant
Min Qty: 2000
Container: Tube		Limited Supply - Call
    2SD2012
    DISTI # 511-2SD2012    		STMicroelectronicsBipolar Transistors - BJT NPN Silcon Pwr Trans
    RoHS: Compliant    		0
      2SD2012(F,M)
      DISTI # N/A      		Toshiba America Electronic ComponentsBipolar Transistors - BJT X35 Pb-F POWER TRANSISTOR TO-220NIS MOQ=500 V=60 PD=25W F=1MHZ
      RoHS: Compliant      		0
        2SD2012Toshiba America Electronic ComponentsBipolar Junction Transistor, NPN Type, TO-220VAR304
        • 201:$0.2100
        • 45:$0.3000
        • 1:$0.6000
        2SD2012Toshiba America Electronic ComponentsBipolar Junction Transistor, NPN Type, TO-220VAR71
        • 45:$0.3000
        • 9:$0.4500
        • 1:$0.6000
        2SD2012STMicroelectronicsBipolar Junction Transistor, NPN Type, TO-220VAR14
        • 8:$0.5600
        • 1:$0.7000
        Bild Teil # Beschreibung
        2SD1803T-E

        Mfr.#: 2SD1803T-E

        OMO.#: OMO-2SD1803T-E-ON-SEMICONDUCTOR

        		 Bipolar Transistors - BJT BIP NPN 5A 50V
        2SD1816T-H

        Mfr.#: 2SD1816T-H

        OMO.#: OMO-2SD1816T-H-ON-SEMICONDUCTOR

        		 Bipolar Transistors - BJT BIP NPN 4A 100V
        2SD1816S-E

        Mfr.#: 2SD1816S-E

        OMO.#: OMO-2SD1816S-E-ON-SEMICONDUCTOR

        		 Bipolar Transistors - BJT BIP NPN 4A 100V
        2SD1306NE

        Mfr.#: 2SD1306NE

        OMO.#: OMO-2SD1306NE-1190

        		 Neu und Original
        2SD1616AL-G-T92

        Mfr.#: 2SD1616AL-G-T92

        OMO.#: OMO-2SD1616AL-G-T92-1190

        		 Neu und Original
        2SD313-Y

        Mfr.#: 2SD313-Y

        OMO.#: OMO-2SD313-Y-1190

        		 Neu und Original
        2SD602A(TX)

        Mfr.#: 2SD602A(TX)

        OMO.#: OMO-2SD602A-TX--1190

        		 Neu und Original
        2SD751

        Mfr.#: 2SD751

        OMO.#: OMO-2SD751-1190

        		 Neu und Original
        2SD780-D-T1

        Mfr.#: 2SD780-D-T1

        OMO.#: OMO-2SD780-D-T1-1190

        		 Neu und Original
        2SD882L-P-T60-K

        Mfr.#: 2SD882L-P-T60-K

        OMO.#: OMO-2SD882L-P-T60-K-1190

        		 Neu und Original
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        5500
        Menge eingeben:
        Der aktuelle Preis von 2SD2012 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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