IXFT18N90P

IXFT18N90P
Mfr. #:
IXFT18N90P
Hersteller:
Littelfuse
Beschreibung:
Darlington Transistors MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFT18N90P Datenblatt
Die Zustellung:
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Zahlung:
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ECAD Model:
Mehr Informationen:
IXFT18N90P Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
IXYS
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
IXFT18N90
Verpackung
Rohr
Gewichtseinheit
0.158733 oz
Montageart
SMD/SMT
Handelsname
HyperFET
Paket-Koffer
TO-268-2
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
540 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Vgs-Gate-Source-Spannung
30 V
ID-Dauer-Drain-Strom
18 A
Vds-Drain-Source-Breakdown-Voltage
900 V
Rds-On-Drain-Source-Widerstand
600 mOhms
Transistor-Polarität
N-Kanal
Tags
IXFT18, IXFT1, IXFT, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 900V 18A TO268
900V Polar HiPerFET Power MOSFETs
IXYS 900V Polar HiPerFET™ Power MOSFETs are available with drain current ratings from 10.5A to 56A and combine the advantages derived from the IXYS Polar Technology platform and HiPerFET process to provide improved power efficiency and reliability in demanding high-voltage conversion systems that require bus voltage operation of up to 700V. IXYS 900V Polar HiPerFET Power MOSFETs are tailored to minimize on-state resistance while maintaining low gate charge, resulting in a substantial reduction in conduction and switching losses. These IXYS devices feature a fast intrinsic diode for low reverse recovery charge and improved turn-off dV/dt immunity. These high reliability Polar HiPerFET Power MOSFETs are ideal for use in a variety of applications, including switch-mode / resonant-mode power supplies, DC/DC converters, laser drivers, and more.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Teil # Mfg. Beschreibung Aktie Preis
IXFT18N90P
DISTI # IXFT18N90P-ND
IXYS CorporationMOSFET N-CH 900V 18A TO268
RoHS: Compliant
Min Qty: 30
Container: Tube
Temporarily Out of Stock
  • 30:$9.4260
IXFT18N90P
DISTI # 747-IXFT18N90P
IXYS CorporationMOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
RoHS: Compliant
0
  • 30:$9.0000
  • 60:$8.3600
  • 120:$8.1700
  • 270:$7.4600
  • 510:$6.8000
  • 1020:$6.4900
Bild Teil # Beschreibung
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Mfr.#: IXFT16N120P-TRL

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Mfr.#: IXFT16N120P TRL

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Mfr.#: IXFT15N100Q

OMO.#: OMO-IXFT15N100Q-IXYS-CORPORATION

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Mfr.#: IXFT13N80Q

OMO.#: OMO-IXFT13N80Q-IXYS-CORPORATION

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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3000
Menge eingeben:
Der aktuelle Preis von IXFT18N90P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
9,74 $
9,74 $
10
9,25 $
92,48 $
100
8,76 $
876,15 $
500
8,27 $
4 137,40 $
1000
7,79 $
7 788,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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