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Teil # | Mfg. | Beschreibung | Aktie | Preis |
---|---|---|---|---|
IRFW710BTM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 2A I(D), 400V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 1600 |
|
Bild | Teil # | Beschreibung |
---|---|---|
Mfr.#: IRFW710B OMO.#: OMO-IRFW710B-1190 |
Neu und Original | |
Mfr.#: IRFW710BTM OMO.#: OMO-IRFW710BTM-1190 |
Power Field-Effect Transistor, 2A I(D), 400V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | |
Mfr.#: IRFW720B OMO.#: OMO-IRFW720B-1190 |
Neu und Original | |
Mfr.#: IRFW730 OMO.#: OMO-IRFW730-1190 |
Neu und Original | |
Mfr.#: IRFW730AT OMO.#: OMO-IRFW730AT-1190 |
Neu und Original | |
Mfr.#: IRFW730ATU OMO.#: OMO-IRFW730ATU-1190 |
Neu und Original | |
Mfr.#: IRFW730BTM OMO.#: OMO-IRFW730BTM-1190 |
Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | |
Mfr.#: IRFW730BTMNL OMO.#: OMO-IRFW730BTMNL-1190 |
Neu und Original | |
Mfr.#: IRFW740ATM OMO.#: OMO-IRFW740ATM-1190 |
Neu und Original | |
Mfr.#: IRFW740TM OMO.#: OMO-IRFW740TM-1190 |
740TM |