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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| IRFW720BTM DISTI # 512-IRFW720BTM | ON Semiconductor | MOSFET 400V N-Channel B-FET RoHS: Compliant | 0 | |
| IRFW720BTM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 3.3A I(D), 400V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 1672 |
|
| IRFW720BTMNL | Fairchild Semiconductor Corporation | RoHS: Not Compliant | 11200 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: IRFW550A OMO.#: OMO-IRFW550A-1190 |
Neu und Original |
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Mfr.#: IRFW550ATM OMO.#: OMO-IRFW550ATM-1190 |
Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: IRFW610B OMO.#: OMO-IRFW610B-1190 |
Neu und Original |
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Mfr.#: IRFW634B OMO.#: OMO-IRFW634B-1190 |
Neu und Original |
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Mfr.#: IRFW640A OMO.#: OMO-IRFW640A-1190 |
18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
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Mfr.#: IRFW644BTMAS003 OMO.#: OMO-IRFW644BTMAS003-1190 |
Neu und Original |
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Mfr.#: IRFW710BTM OMO.#: OMO-IRFW710BTM-1190 |
Power Field-Effect Transistor, 2A I(D), 400V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: IRFW720TM OMO.#: OMO-IRFW720TM-1190 |
Neu und Original |
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Mfr.#: IRFW730B OMO.#: OMO-IRFW730B-1190 |
Neu und Original |
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Mfr.#: IRFW840B OMO.#: OMO-IRFW840B-1190 |
Neu und Original |