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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| IRFW550ATM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 847 | |
| IRFW550ATM DISTI # 512-IRFW550ATM | ON Semiconductor | MOSFET 100V N-Channel A-FET RoHS: Compliant | 0 |
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: IRFW510ATM OMO.#: OMO-IRFW510ATM-1190 |
MOSFET |
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Mfr.#: IRFW520ATMFSC OMO.#: OMO-IRFW520ATMFSC-1190 |
Neu und Original |
|
|
Mfr.#: IRFW530 OMO.#: OMO-IRFW530-1190 |
Neu und Original |
|
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Mfr.#: IRFW530AM OMO.#: OMO-IRFW530AM-1190 |
Neu und Original |
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Mfr.#: IRFW530ATM OMO.#: OMO-IRFW530ATM-1190 |
MOSFET 100V N-Channel A-FET |
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Mfr.#: IRFW530ATM-NL OMO.#: OMO-IRFW530ATM-NL-1190 |
Neu und Original |
|
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Mfr.#: IRFW540 OMO.#: OMO-IRFW540-1190 |
Neu und Original |
|
Mfr.#: IRFW540ATM |
MOSFET N-CH 100V 28A D2PAK |
|
|
Mfr.#: IRFW550A OMO.#: OMO-IRFW550A-1190 |
Neu und Original |
|
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Mfr.#: IRFW550ATM OMO.#: OMO-IRFW550ATM-1190 |
Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |