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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| IRFW634BTM_FP001 | 250V N-Channel MOSFET | 0 | ||
| IRFW634BTM_AM003 | 250V N-Channel MOSFET | 0 | ||
| IRFW634BTMFP001 | Fairchild Semiconductor Corporation | RoHS: Not Compliant | 800 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: IRFW510ATM OMO.#: OMO-IRFW510ATM-1190 |
MOSFET |
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Mfr.#: IRFW520ATM OMO.#: OMO-IRFW520ATM-1190 |
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: IRFW530ATM OMO.#: OMO-IRFW530ATM-1190 |
MOSFET 100V N-Channel A-FET |
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Mfr.#: IRFW540R OMO.#: OMO-IRFW540R-1190 |
Neu und Original |
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Mfr.#: IRFW550ATM OMO.#: OMO-IRFW550ATM-1190 |
Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: IRFW610BTM OMO.#: OMO-IRFW610BTM-1190 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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Mfr.#: IRFW730ATM OMO.#: OMO-IRFW730ATM-1190 |
Neu und Original |
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Mfr.#: IRFW730BTM OMO.#: OMO-IRFW730BTM-1190 |
Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: IRFW820ATM OMO.#: OMO-IRFW820ATM-1190 |
Neu und Original |
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Mfr.#: IRFW830B OMO.#: OMO-IRFW830B-1190 |
Neu und Original |