We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| IRFW540ATM DISTI # IRFW540ATM-ND | ON Semiconductor | MOSFET N-CH 100V 28A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR) | Limited Supply - Call | |
| IRFW540ATM DISTI # 512-IRFW540ATM | ON Semiconductor | MOSFET 100V N-Channel A-FET RoHS: Compliant | 0 | |
| IRFW540ATM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 28A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 30839 |
|
| IRFW540ATM | Samsung Semiconductor | *** FREE SHIPPING ORDERS OVER $100 *** MOSFET Transistor, N-Channel, TO-263AB | 1920 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: IRFW450 OMO.#: OMO-IRFW450-1190 |
Neu und Original |
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|
Mfr.#: IRFW510ATM OMO.#: OMO-IRFW510ATM-1190 |
MOSFET |
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|
Mfr.#: IRFW520ATM OMO.#: OMO-IRFW520ATM-1190 |
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
|
Mfr.#: IRFW520ATMFSC OMO.#: OMO-IRFW520ATMFSC-1190 |
Neu und Original |
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Mfr.#: IRFW530 OMO.#: OMO-IRFW530-1190 |
Neu und Original |
|
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Mfr.#: IRFW530AM OMO.#: OMO-IRFW530AM-1190 |
Neu und Original |
|
|
Mfr.#: IRFW630B OMO.#: OMO-IRFW630B-1190 |
INSTOCK |
|
|
Mfr.#: IRFW650BTM OMO.#: OMO-IRFW650BTM-1190 |
Neu und Original |
|
|
Mfr.#: IRFW720 OMO.#: OMO-IRFW720-1190 |
Neu und Original |
|
|
Mfr.#: IRFW740ATM OMO.#: OMO-IRFW740ATM-1190 |
Neu und Original |