SIA417DJ-T1-GE3

SIA417DJ-T1-GE3
Mfr. #:
SIA417DJ-T1-GE3
Hersteller:
Vishay
Beschreibung:
IGBT Transistors MOSFET 8.0V 12A 19W 23mohm @ 4.5V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIA417DJ-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
VISHAY
Produktkategorie
FETs - Einzeln
Tags
SIA417, SIA41, SIA4, SIA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R
***nell
P CHANNEL MOSFET, -8V, 12A, SC-70
***i-Key
MOSFET P-CH 8V 12A SC70-6
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-12000mA; Drain Source Voltage, Vds:-8V; On Resistance, Rds(on):0.095ohm; Rds(on) Test Voltage, Vgs:5V; Threshold Voltage, Vgs Typ:-1V; Power Dissipation, Pd:3.5W ;RoHS Compliant: Yes
***ment14 APAC
P CHANNEL MOSFET, -8V, 12A, SC-70; Trans; P CHANNEL MOSFET, -8V, 12A, SC-70; Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Drain Source Voltage Vds:-8V; On Resistance Rds(on):95mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:-1V; No. of Pins:6
Teil # Mfg. Beschreibung Aktie Preis
SIA417DJ-T1-GE3
DISTI # SIA417DJ-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 8V 12A SC70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    SIA417DJ-T1-GE3
    DISTI # SIA417DJ-T1-GE3CT-ND
    Vishay SiliconixMOSFET P-CH 8V 12A SC70-6
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      SIA417DJ-T1-GE3
      DISTI # SIA417DJ-T1-GE3DKR-ND
      Vishay SiliconixMOSFET P-CH 8V 12A SC70-6
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        SIA417DJ-T1-GE3
        DISTI # 781-SIA417DJ-T1-GE3
        Vishay IntertechnologiesMOSFET 8.0V 12A 19W 23mohm @ 4.5V
        RoHS: Compliant
        0
          SIA417DJ-T1-GE3Vishay SiliconixPOWER FIELD-EFFECT TRANSISTOR, 12A I(D), 8V, 0.023OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET2895
          • 2561:$0.2750
          • 572:$0.3125
          • 1:$1.0000
          Bild Teil # Beschreibung
          SIA417DJ-T1-GE3

          Mfr.#: SIA417DJ-T1-GE3

          OMO.#: OMO-SIA417DJ-T1-GE3

          MOSFET RECOMMENDED ALT 78-SIA427ADJ-T1-GE3
          SIA417DJ-T1-GE3

          Mfr.#: SIA417DJ-T1-GE3

          OMO.#: OMO-SIA417DJ-T1-GE3-VISHAY

          IGBT Transistors MOSFET 8.0V 12A 19W 23mohm @ 4.5V
          SIA417DJ-T1

          Mfr.#: SIA417DJ-T1

          OMO.#: OMO-SIA417DJ-T1-1190

          Neu und Original
          SIA417DJ-T1-E3

          Mfr.#: SIA417DJ-T1-E3

          OMO.#: OMO-SIA417DJ-T1-E3-1190

          MOSFET RECOMMENDED ALT 78-SIA427ADJ-T1-GE3
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          2500
          Menge eingeben:
          Der aktuelle Preis von SIA417DJ-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
          Referenzpreis (USD)
          Menge
          Stückpreis
          ext. Preis
          1
          0,41 $
          0,41 $
          10
          0,39 $
          3,92 $
          100
          0,37 $
          37,13 $
          500
          0,35 $
          175,30 $
          1000
          0,33 $
          330,00 $
          Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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