 | | | |
| PartNumber | SIA406DJ-T1-GE3 | SIA400EDJ-T1-GE3 | SIA408DJ-T1-GE3 |
| Description | MOSFET RECOMMENDED ALT 78-SIA430DJT-T1-GE3 | MOSFET 30V Vds 12V Vgs PowerPAK SC-70 | MOSFET RECOMMENDED ALT 78-SIA400EDJ-T1-GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | PowerPAK-SC70-6 | - | PowerPAK-SC70-6 |
| Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
| Packaging | Reel | Reel | Reel |
| Height | 0.75 mm | - | 0.75 mm |
| Length | 2.05 mm | - | 2.05 mm |
| Series | SIA | SIA | SIA |
| Width | 2.05 mm | - | 2.05 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | SIA406DJ-GE3 | SIA400EDJ-GE3 | SIA408DJ-GE3 |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIA413DJ-T1-GE3 | MOSFET 12V 12A 19W 29mohm @ 4.5V | |
| SIA421DJ-T1-GE3 | MOSFET -30V Vds 20V Vgs PowerPAK SC-70 | ||
| SIA413ADJ-T1-GE3 | MOSFET -12V Vds 8V Vgs PowerPAK SC-70 | ||
| SIA406DJ-T1-GE3 | MOSFET RECOMMENDED ALT 78-SIA430DJT-T1-GE3 | ||
| SIA400EDJ-T1-GE3 | MOSFET 30V Vds 12V Vgs PowerPAK SC-70 | ||
| SIA411DJ-T1-E3 | MOSFET RECOMMENDED ALT 781-SIA429DJT-T1-GE3 | ||
| SIA408DJ-T1-GE3 | MOSFET RECOMMENDED ALT 78-SIA400EDJ-T1-GE3 | ||
| SIA417DJ-T1-GE3 | MOSFET RECOMMENDED ALT 78-SIA427ADJ-T1-GE3 | ||
| SIA416DJ-T1-GE3 | MOSFET 100V Vds 20V Vgs PowerPAK SC-70 | ||
Vishay |
SIA415DJ-T1-GE3 | IGBT Transistors MOSFET 20V 12A 19W 35mohm @ 4.5V | |
| SIA411DJ-T1-E3 | IGBT Transistors MOSFET 20V 12A 19W 30mohm @ 4.5V | ||
| SIA417DJ-T1-GE3 | IGBT Transistors MOSFET 8.0V 12A 19W 23mohm @ 4.5V | ||
| SIA411DJ-T1-GE3 | IGBT Transistors MOSFET 20V 12A 19W 30mohm @ 4.5V | ||
| SIA413ADJ-T1-GE3 | RF Bipolar Transistors MOSFET P-Ch PPAK SC-70 12V 29mohm @ 10V | ||
| SIA400EDJ-T1-GE3 | MOSFET N-CH 30V 12A SC-70 | ||
| SIA406DJ-T1-GE3 | MOSFET N-CH 12V 4.5A SC-70-6 | ||
| SIA408DJ-T1-GE3 | MOSFET N-CH 30V 4.5A SC70-6 | ||
| SIA413DJ-T1-GE3 | MOSFET P-CH 12V 12A SC70-6 | ||
| SIA414DJ-T1-GE3 | MOSFET N-CH 8V 12A SC70-6 | ||
| SIA416DJ-T1-GE3 | MOSFET N-CH 100V 11.3A SC70-6L | ||
| SIA419DJ-T1-GE3 | MOSFET P-CH 20V 12A SC70-6 | ||
| SIA418DJ-T1-GE3 | Trans MOSFET N-CH 30V 12A 6-Pin PowerPAK SC-70 EP T/R | ||
| SIA408DJ-T1-GE3-CUT TAPE | Neu und Original | ||
| SIA414DJ-T1-GE3-CUT TAPE | Neu und Original | ||
| SIA415DJ-T1-GE3-CUT TAPE | Neu und Original | ||
| SIA416DJ-T4-GE3 | Neu und Original | ||
| SIA400EDJ | Neu und Original | ||
| SIA400EDJ-T1 | Neu und Original | ||
| SIA400EDJ-T1-E3 | Neu und Original | ||
| SIA4012-4R7M | Neu und Original | ||
| SIA401DJ | Neu und Original | ||
| SIA401DJ-T1-E3 | Neu und Original | ||
| SIA402DJ-T1-E3 | Neu und Original | ||
| SIA406DJJ-T1-GE3 | Neu und Original | ||
| SIA406DJT1GE3 | Power Field-Effect Transistor, 4.5A I(D), 12V, 0.0198ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SIA411DJ | Neu und Original | ||
| SIA412DJ-E3 | Neu und Original | ||
| SIA413ADJ-T1-E3 | Neu und Original | ||
| SIA413DJ | Neu und Original | ||
| SIA413DJ-T1-E3 | Neu und Original | ||
| SIA413DJ-T4-GE3 | Neu und Original | ||
| SIA413DJ-TI-GE3 | Neu und Original | ||
| SIA414 | Neu und Original | ||
| SIA414DJ | Neu und Original | ||
| SIA414DJ-TI-E3 | Neu und Original | ||
| SIA415DJ-E3 | Neu und Original | ||
| SIA417DJ-T1 | Neu und Original | ||
| SIA417DJ-T1-E3 | MOSFET RECOMMENDED ALT 78-SIA427ADJ-T1-GE3 | ||
| SIA419DJ | Neu und Original | ||
| SIA419DJ-T1-E3 | MOSFET RECOMMENDED ALT 78-SIA427ADJ-T1-GE3 |