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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SIA406DJ-T1-GE3 DISTI # V72:2272_09216822 | Vishay Intertechnologies | Trans MOSFET N-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant | 2370 |
|
| SIA406DJ-T1-GE3 DISTI # SIA406DJ-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 12V 4.5A SC-70-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SIA406DJ-T1-GE3 DISTI # SIA406DJ-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 12V 4.5A SC-70-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SIA406DJ-T1-GE3 DISTI # SIA406DJ-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 12V 4.5A SC-70-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SIA406DJ-T1-GE3 DISTI # 30286380 | Vishay Intertechnologies | Trans MOSFET N-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant | 2370 |
|
| SIA406DJ-T1-GE3 DISTI # 35R6183 | Vishay Intertechnologies | N CHANNEL MOSFET, 12V, 4.5A,Transistor Polarity:N Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.0198ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,No. of Pins:6Pins RoHS Compliant: Yes | 0 | |
| SIA406DJ-T1-GE3 DISTI # 35R0005 | Vishay Intertechnologies | N CHANNEL MOSFET, 12V, 4.5A,Transistor Polarity:N Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:12V,On Resistance Rds(on):19.8mohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs Typ:1V RoHS Compliant: Yes | 0 | |
| SIA406DJ-T1-GE3 DISTI # 781-SIA406DJ-GE3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 78-SIA430DJT-T1-GE3 RoHS: Compliant | 1960 |
|
| SIA406DJT1GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 4.5A I(D), 12V, 0.0198ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 3000 | |
| DEL-SIA406DJ-T1-GE3 DISTI # 1781598 | Vishay Intertechnologies | N CHANNEL MOSFET, 12V, 4.5A RoHS: Compliant | 0 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: SIA406DJ-T1-GE3 OMO.#: OMO-SIA406DJ-T1-GE3 |
MOSFET RECOMMENDED ALT 78-SIA430DJT-T1-GE3 |
|
Mfr.#: SIA406DJ-T1-GE3 OMO.#: OMO-SIA406DJ-T1-GE3-VISHAY |
MOSFET N-CH 12V 4.5A SC-70-6 |
|
Mfr.#: SIA406DJJ-T1-GE3 OMO.#: OMO-SIA406DJJ-T1-GE3-1190 |
Neu und Original |
|
|
Mfr.#: SIA406DJT1GE3 OMO.#: OMO-SIA406DJT1GE3-1190 |
Power Field-Effect Transistor, 4.5A I(D), 12V, 0.0198ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |