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IRLR3802PBF

IRLR3802PBF
Mfr. #:
IRLR3802PBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET 12V 1 N-CH HEXFET 4.2mOhms 27nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRLR3802PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRLR3802PBF DatasheetIRLR3802PBF Datasheet (P4-P6)IRLR3802PBF Datasheet (P7-P9)IRLR3802PBF Datasheet (P10-P11)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
12 V
Id - Kontinuierlicher Drainstrom:
84 A
Rds On - Drain-Source-Widerstand:
8.5 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.9 V
Vgs - Gate-Source-Spannung:
12 V
Qg - Gate-Ladung:
27 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
88 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
2.3 mm
Länge:
6.5 mm
Transistortyp:
1 N-Channel
Typ:
HEXFET Leistungs-MOSFET
Breite:
6.22 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
31 S
Abfallzeit:
17 ns
Produktart:
MOSFET
Anstiegszeit:
14 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
21 ns
Typische Einschaltverzögerungszeit:
11 ns
Teil # Aliase:
SP001573140
Gewichtseinheit:
0.139332 oz
Tags
IRLR38, IRLR3, IRLR, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
IRLR3802PBF N-channel MOSFET Transistor, 84 A, 12 V, 3-Pin DPAK
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level
***ment14 APAC
MOSFET, N, 12V, 84A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:84A; Drain Source Voltage Vds:12V; On Resistance Rds(on):8.5mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:88W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:84A; Junction to Case Thermal Resistance A:1.7°C/W; On State resistance @ Vgs = 10V:8.5mohm; Package / Case:DPAK; Power Dissipation Pd:88W; Power Dissipation Pd:88W; Pulse Current Idm:320A; Termination Type:SMD; Voltage Vds Typ:12V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:1.9V
Teil # Mfg. Beschreibung Aktie Preis
IRLR3802PBF
DISTI # V99:2348_13890098		Infineon Technologies AGTrans MOSFET N-CH 12V 84A 3-Pin(2+Tab) DPAK Tube
RoHS: Compliant		5936
  • 9000:$0.5003
  • 3000:$0.5181
  • 1000:$0.5883
  • 500:$0.7059
  • 100:$0.7864
  • 10:$0.9861
  • 1:$1.1169
IRLR3802PBF
DISTI # IRLR3802PBF-ND		Infineon Technologies AGMOSFET N-CH 12V 84A DPAK
RoHS: Compliant
Min Qty: 6000
Container: Tube		Limited Supply - Call
    IRLR3802PBF
    DISTI # 26198107    		Infineon Technologies AGTrans MOSFET N-CH 12V 84A 3-Pin(2+Tab) DPAK Tube
    RoHS: Compliant    		5936
    • 3000:$0.5181
    • 1000:$0.5883
    • 500:$0.7059
    • 100:$0.7864
    • 13:$0.9861
    IRLR3802PBF
    DISTI # 70018563    		Infineon Technologies AGMOSFET,12V,84A,8.5 MOHM,27 NC QG,LOGIC LEVEL,D-PAK
    RoHS: Compliant    		0
    • 6000:$1.2600
    IRLR3802PBF
    DISTI # 942-IRLR3802PBF    		Infineon Technologies AGMOSFET 12V 1 N-CH HEXFET 4.2mOhms 27nC
    RoHS: Compliant    		2891
    • 1:$1.4400
    • 10:$1.2300
    • 100:$0.9440
    • 500:$0.8340
    • 1000:$0.6590
    IRLR3802PBFInternational RectifierPower Field-Effect Transistor, 30A I(D), 12V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    RoHS: Compliant    		17475
    • 1000:$0.5800
    • 500:$0.6100
    • 100:$0.6300
    • 25:$0.6600
    • 1:$0.7100
    IRLR3802PBFInternational Rectifier 99
    • 70:$0.5250
    • 15:$0.8750
    • 1:$1.7500
    IRLR3802PBFInternational Rectifier 124
    • 4:$1.3125
    • 17:$0.8531
    • 60:$0.4922
    IRLR3802PBF
    DISTI # 9075135P    		Infineon Technologies AGMOSFET N-CHANNEL HEXFET 12V 84A DPAK, TU30
    • 75:£0.7870
    • 375:£0.6830
    • 750:£0.6040
    • 1875:£0.4760
    IRLR3802PBF
    DISTI # IRLR3802PBF    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,12V,84A,88W,DPAK150
    • 1:$0.9914
    • 3:$0.9129
    • 10:$0.7484
    • 75:$0.6347
    IRLR3802PBFInternational Rectifier 
    RoHS: Compliant    		Europe - 11700
      IRLR3802PBF
      DISTI # C1S322000588206      		Infineon Technologies AGTrans MOSFET N-CH 12V 84A 3-Pin(2+Tab) DPAK Tube
      RoHS: Compliant      		5936
      • 1000:$0.5883
      • 500:$0.7059
      • 100:$0.7864
      • 10:$0.9861
      IRLR3802PBF
      DISTI # 8660190      		Infineon Technologies AGMOSFET, N, 12V, 84A, D-PAK
      RoHS: Compliant      		2810
      • 5:£0.8920
      • 25:£0.3950
      • 100:£0.3840
      • 250:£0.3730
      • 500:£0.3610
      IRLR3802PBF
      DISTI # 8660190      		Infineon Technologies AGMOSFET, N, 12V, 84A, D-PAK
      RoHS: Compliant      		2810
      • 1:$2.2800
      • 10:$1.9500
      • 100:$1.5000
      • 500:$1.3300
      • 1000:$1.0500
      • 3000:$0.9240
      • 9000:$0.8900
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1985
      Menge eingeben:
      Der aktuelle Preis von IRLR3802PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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