 |  |  | |
| PartNumber | IRLR3802PBF | IRLR3802 | IRLR3802TRLPBF |
| Description | MOSFET 12V 1 N-CH HEXFET 4.2mOhms 27nC | MOSFET N-CH 12V 84A DPAK | |
| Manufacturer | Infineon | IR | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 12 V | - | - |
| Id Continuous Drain Current | 84 A | - | - |
| Rds On Drain Source Resistance | 8.5 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.9 V | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Qg Gate Charge | 27 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 88 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | HEXFET Power MOSFET | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 31 S | - | - |
| Fall Time | 17 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 14 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 21 ns | - | - |
| Typical Turn On Delay Time | 11 ns | - | - |
| Part # Aliases | SP001573140 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon / IR |
IRLR3802TRPBF | MOSFET 12V 1 N-CH HEXFET 4.2mOhms 27nC | |
Infineon Technologies |
IRLR3802PBF | MOSFET 12V 1 N-CH HEXFET 4.2mOhms 27nC | |
| IRLR3802 | Neu und Original | ||
Infineon Technologies |
IRLR3802PBF | MOSFET N-CH 12V 84A DPAK | |
| IRLR3802TRPBF | MOSFET N-CH 12V 84A DPAK | ||
| IRLR3802TRLPBF | MOSFET N-CH 12V 84A DPAK |