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SI3430DV-T1-E3

SI3430DV-T1-E3
Mfr. #:
SI3430DV-T1-E3
Hersteller:
Vishay
Beschreibung:
Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI3430DV-T1-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SI3430DV-T1-E3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Vishay Siliconix
Produktkategorie
FETs - Einzeln
Serie
-
Verpackung
Digi-ReelR Alternative Verpackung
Teil-Aliasnamen
SI3430DV-E3
Gewichtseinheit
0.000705 oz
Montageart
SMD/SMT
Paket-Koffer
SOT-23-6 Thin, TSOT-23-6
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
1 Channel
Lieferanten-Geräte-Paket
6-TSOP
Aufbau
Single
FET-Typ
MOSFET N-Kanal, Metalloxid
Leistung max
1.14W
Transistor-Typ
1 N-Channel
Drain-zu-Source-Spannung-Vdss
100V
Eingangskapazität-Ciss-Vds
-
FET-Funktion
Standard
Strom-Dauer-Drain-Id-25°C
1.8A (Ta)
Rds-On-Max-Id-Vgs
170 mOhm @ 2.4A, 10V
Vgs-th-Max-Id
2V @ 250μA (Min)
Gate-Lade-Qg-Vgs
6.6nC @ 10V
Pd-Verlustleistung
1.14 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
11 ns
Anstiegszeit
11 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
2.4 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Rds-On-Drain-Source-Widerstand
170 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
16 ns
Typische-Einschaltverzögerungszeit
9 ns
Kanal-Modus
Erweiterung
Tags
SI3430, SI343, SI34, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 0.17 Ohms Surface Mount Power Mosfet - TSOP-6
***et Europe
Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R
***Components
MOSFET N-Channel 100V 1.8A TSOP6
***i-Key
MOSFET N-CH 100V 1.8A 6-TSOP
***ronik
N-CHANNEL-FET 2,4A 100V TSOP-6 RoHSconf
***ser
N-Channel MOSFETs 100V 8A 2W
***ponent Sense
MOSFET 100V 8A 2W
***ied Electronics & Automation
TRANSITOR, SI2323DS
***
100V, 170 MOHMS@10V
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.17Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:1.14W; No. Of Pins:6Pins Rohs Compliant: No
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI3430DV-T1-E3
DISTI # V72:2272_07433160		Vishay IntertechnologiesTrans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R
RoHS: Compliant		49
  • 25:$0.8309
  • 10:$0.8590
  • 1:$0.9585
SI3430DV-T1-E3
DISTI # SI3430DV-T1-E3TR-ND		Vishay SiliconixMOSFET N-CH 100V 1.8A 6-TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.4500
SI3430DV-T1-E3
DISTI # SI3430DV-T1-E3CT-ND		Vishay SiliconixMOSFET N-CH 100V 1.8A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.4966
  • 500:$0.6290
  • 100:$0.8111
  • 10:$1.0260
  • 1:$1.1600
SI3430DV-T1-E3
DISTI # SI3430DV-T1-E3DKR-ND		Vishay SiliconixMOSFET N-CH 100V 1.8A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.4966
  • 500:$0.6290
  • 100:$0.8111
  • 10:$1.0260
  • 1:$1.1600
SI3430DV-T1-E3
DISTI # SI3430DV-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R - Cut TR (SOS) (Alt: SI3430DV-T1-E3)
RoHS: Not Compliant
Min Qty: 1
Container: Cut Tape		Americas - 61
  • 1:$0.8579
  • 30:$0.8069
  • 75:$0.8049
  • 150:$0.7699
  • 375:$0.6689
  • 750:$0.5459
  • 1500:$0.5439
SI3430DV-T1-E3
DISTI # SI3430DV-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3430DV-T1-E3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.5239
  • 6000:$0.5079
  • 12000:$0.4869
  • 18000:$0.4739
  • 30000:$0.4609
SI3430DV-T1-E3
DISTI # 06J7594		Vishay IntertechnologiesN CHANNEL MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:1.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):170mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:1.14W , RoHS Compliant: Yes0
  • 1:$1.2100
  • 10:$1.0700
  • 25:$0.9980
  • 50:$0.9230
  • 100:$0.8480
  • 500:$0.6570
  • 1000:$0.5190
SI3430DV-T1-E3
DISTI # 65K1923		Vishay IntertechnologiesN CHANNEL MOSFET, 100V, 1.8A, TSOP, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:1.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):185mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V , RoHS Compliant: Yes0
  • 1:$0.4700
  • 3000:$0.4700
SI3430DV-T1-E3.
DISTI # 15AC0293		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:1.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):170mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:1.14W,No. of Pins:6Pins , RoHS Compliant: No0
  • 1:$0.4700
  • 3000:$0.4700
SI3430DV-T1-E3
DISTI # 781-SI3430DV-E3		Vishay IntertechnologiesMOSFET 100V 8A 2W
RoHS: Compliant		360
  • 1:$1.2600
  • 10:$1.0400
  • 100:$0.7940
  • 500:$0.6820
  • 1000:$0.6000
  • 3000:$0.5990
SI3430DV-T1
DISTI # 781-SI3430DV		Vishay IntertechnologiesMOSFET 100V 8A 2W
RoHS: Not compliant		0
    SI3430DV-T1-E3Vishay Intertechnologies1800 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET16
    • 5:$1.0820
    • 1:$1.3525
    SI3430DV-T1-E3Vishay Intertechnologies1800 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET292
    • 81:$0.4500
    • 18:$0.7500
    • 1:$1.5000
    SI3430DV-T1-E3Vishay BLH 365
    • 5:$1.1250
    • 19:$0.7313
    • 70:$0.4219
    • 239:$0.3600
    SI3430DV-T1-E3.Vishay IntertechnologiesMOSFET 100V 8A 2W
    RoHS: Compliant    		Americas - 530
    • 10:$0.7040
    SI3430DV-T1-E3Vishay IntertechnologiesMOSFET 100V 8A 2W
    RoHS: Compliant    		Americas - Stock
      SI3430DV-T1-E3
      DISTI # C1S803600844371      		Vishay IntertechnologiesMOSFETs
      RoHS: Compliant      		49
      • 25:$0.8309
      • 10:$0.8590
      Bild Teil # Beschreibung
      SI3430DV-T1-GE3

      Mfr.#: SI3430DV-T1-GE3

      OMO.#: OMO-SI3430DV-T1-GE3

      		 MOSFET 100V 2.4A 2.0W 170mohm @ 10V
      SI3430DV-T1-E3

      Mfr.#: SI3430DV-T1-E3

      OMO.#: OMO-SI3430DV-T1-E3

      		 MOSFET 100V, 170 MOHMS@10V
      SI3430DV-T1-GE3

      Mfr.#: SI3430DV-T1-GE3

      OMO.#: OMO-SI3430DV-T1-GE3-VISHAY

      		 IGBT Transistors MOSFET 100V 2.4A 2.0W 170mohm @ 10V
      SI3430DV

      Mfr.#: SI3430DV

      OMO.#: OMO-SI3430DV-1190

      		 Neu und Original
      SI3430DV-T1-E3

      Mfr.#: SI3430DV-T1-E3

      OMO.#: OMO-SI3430DV-T1-E3-VISHAY

      		 Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4000
      Menge eingeben:
      Der aktuelle Preis von SI3430DV-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,54 $
      0,54 $
      10
      0,51 $
      5,13 $
      100
      0,49 $
      48,60 $
      500
      0,46 $
      229,50 $
      1000
      0,43 $
      432,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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