SI3430DV-T1-GE3

Mfr. #:: SI3430DV-T1-GE3
Hersteller:: Vishay
Beschreibung:: IGBT Transistors MOSFET 100V 2.4A 2.0W 170mohm @ 10V
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI3430DV-T1-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: SI3430DV-T1-GE3 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller: VISHAY

Produktkategorie: IC-Chips

Verpackung: Spule

Teil-Aliasnamen: SI3430DV-GE3

Gewichtseinheit: 0.000705 oz

Montageart: SMD/SMT

Paket-Koffer: TSOP-6

Technologie: Si

Anzahl der Kanäle: 1 Channel

Aufbau: Single

Transistor-Typ: 1 N-Channel

Pd-Verlustleistung: 1.14 W

Maximale-Betriebstemperatur: + 150 C

Mindest-Betriebstemperatur: - 55 C

Abfallzeit: 9 ns

Anstiegszeit: 11 ns

Vgs-Gate-Source-Spannung: 20 V

ID-Dauer-Drain-Strom: 2.4 A

Vds-Drain-Source-Breakdown-Voltage: 100 V

Rds-On-Drain-Source-Widerstand: 170 mOhms

Transistor-Polarität: N-Kanal

Typische-Ausschaltverzögerungszeit: 16 ns

Typische-Einschaltverzögerungszeit: 9 ns

Kanal-Modus: Erweiterung

Tags: SI3430, SI343, SI34, SI3

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI3430DV-T1-GE3 Beschreibung

***ical: Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R

***nell: N CHANNEL MOSFET, 100V, 2.4A, TSOP-6

***ment14 APAC: N CHANNEL MOSFET, 100V, 2.4A, TSOP-6; Tr; N CHANNEL MOSFET, 100V, 2.4A, TSOP-6; Transistor Polarity:N Channel; Continuous Drain Current Id:2.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):170mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V

SI3430DV-T1-GE3 Mehr Informationen

Si3 MOSFETs: Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SI3430DV-T1-GE3 DISTI # 21256746	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R RoHS: Compliant	838	500:$0.2214 323:$0.2246
SI3430DV-T1-GE3 DISTI # SI3430DV-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 100V 1.8A 6-TSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1159In Stock	1000:$0.4966 500:$0.6290 100:$0.8111 10:$1.0260 1:$1.1600
SI3430DV-T1-GE3 DISTI # SI3430DV-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 100V 1.8A 6-TSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1159In Stock	1000:$0.4966 500:$0.6290 100:$0.8111 10:$1.0260 1:$1.1600
SI3430DV-T1-GE3 DISTI # SI3430DV-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 100V 1.8A 6-TSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.4500
SI3430DV-T1-GE3 DISTI # SI3430DV-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3430DV-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.4659 6000:$0.4639 12000:$0.4629 18000:$0.4609 30000:$0.4599
SI3430DV-T1-GE3 DISTI # SI3430DV-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R (Alt: SI3430DV-T1-GE3) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	1:€0.6869 10:€0.4689 25:€0.4029 50:€0.3719 100:€0.3579 500:€0.3529 1000:€0.3469
SI3430DV-T1-GE3 DISTI # 26R1863	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R - Product that comes on tape, but is not reeled (Alt: 26R1863) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$1.2600 25:$1.0400 50:$0.9170 100:$0.7940 250:$0.7380 500:$0.6820 1000:$0.5390
SI3430DV-T1-GE3 DISTI # 26R1863	Vishay Intertechnologies	N CHANNEL MOSFET, 100V, 2.4A, TSOP-6,Transistor Polarity:N Channel,Continuous Drain Current Id:2.4A,Drain Source Voltage Vds:100V,On Resistance Rds(on):170mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V , RoHS Compliant: Yes	838	1:$0.1550 25:$0.1550 50:$0.1550 100:$0.1550 250:$0.1550 500:$0.1550 1000:$0.1550
SI3430DV-T1-GE3 DISTI # 15R4923	Vishay Intertechnologies	N CH MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:2.4A,Drain Source Voltage Vds:100V,On Resistance Rds(on):170mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:2W , RoHS Compliant: Yes	0	1:$0.5100 3000:$0.5070 6000:$0.4830 12000:$0.4270
SI3430DV-T1-GE3 DISTI # 781-SI3430DV-GE3	Vishay Intertechnologies	MOSFET 100V 2.4A 2.0W 170mohm @ 10V RoHS: Compliant	3280	1:$1.2600 10:$1.0400 100:$0.7940 500:$0.6820 1000:$0.5390 3000:$0.5030 6000:$0.4780 9000:$0.4670
SI3430DV-T1-GE3 DISTI # 1871903	Vishay Intertechnologies	N CHANNEL MOSFET, 100V, 2.4A, TSOP-6 RoHS: Compliant	838	1:$1.9800
SI3430DV-T1-GE3 DISTI # 1871903	Vishay Intertechnologies	N CHANNEL MOSFET, 100V, 2.4A, TSOP-6 RoHS: Compliant	838	1:£1.1100 25:£0.9210 50:£0.8130 100:£0.7030 250:£0.6530

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: SI3430DV-T1-GE3 OMO.#: OMO-SI3430DV-T1-GE3	MOSFET 100V 2.4A 2.0W 170mohm @ 10V
	Mfr.#: SI3430DV-T1-E3 OMO.#: OMO-SI3430DV-T1-E3	MOSFET 100V, 170 MOHMS@10V
	Mfr.#: SI3430DV-T1-GE3 OMO.#: OMO-SI3430DV-T1-GE3-VISHAY	IGBT Transistors MOSFET 100V 2.4A 2.0W 170mohm @ 10V
	Mfr.#: SI3430DV OMO.#: OMO-SI3430DV-1190	Neu und Original
	Mfr.#: SI3430DV-T1-E3 OMO.#: OMO-SI3430DV-T1-E3-VISHAY	Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 2000
Menge eingeben:

Der aktuelle Preis von SI3430DV-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,54 $~~; ~~0,54 $~~

10: ~~0,51 $~~; ~~5,09 $~~

100: ~~0,48 $~~; ~~48,20 $~~

500: ~~0,46 $~~; ~~227,60 $~~

1000: ~~0,43 $~~; ~~428,40 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

SI3430 3
SI343 39
SI34 504
SI3 1735

SI3430DV-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes