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IPU95R3K7P7AKMA1

IPU95R3K7P7AKMA1
Mfr. #:
IPU95R3K7P7AKMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET 950 V CoolMOS P7
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPU95R3K7P7AKMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPU95R3K7P7AKMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
IPAK-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
950 V
Id - Kontinuierlicher Drainstrom:
2 A
Rds On - Drain-Source-Widerstand:
3.7 Ohms
Vgs th - Gate-Source-Schwellenspannung:
2.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
6 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
22 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Rohr
Serie:
P7
Transistortyp:
1 N-Channel
Marke:
Infineon-Technologien
Abfallzeit:
40 ns
Produktart:
MOSFET
Anstiegszeit:
23 ns
Werkspackungsmenge:
1500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
46 ns
Typische Einschaltverzögerungszeit:
7ns
Teil # Aliase:
IPU95R3K7P7
Tags
IPU9, IPU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
950V CoolMOS™ P7 SJ MOSFETs
Infineon Technologies 950V CoolMOS™ P7 SJ MOSFETs employs 950V super junction technology and combines best-in-class performance with state of the art ease-of-use. These MOSFETs come with an integrated Zener diode Electro Static Discharge (ESD) protection. The integrated diode improves ESD robustness that reduces ESD-related yield loss and provides exceptional ease-of-use levels. These MOSFETs offer 3V VGS(th) and narrow tolerance of only ±0.5V that makes it easy to drive and design-in. The 950V SJ MOSFETs provide low DPAK RDS(on) that enables higher density while decreasing BOM and assembly cost.
Teil # Mfg. Beschreibung Aktie Preis
IPU95R3K7P7AKMA1
DISTI # V99:2348_22609666		Infineon Technologies AGLOW POWER_NEW1500
  • 10000:$0.4557
  • 2500:$0.4649
  • 1000:$0.4853
  • 500:$0.5480
  • 100:$0.6153
  • 10:$0.8842
  • 1:$1.0348
IPU95R3K7P7AKMA1
DISTI # IPU95R3K7P7AKMA1-ND		Infineon Technologies AGMOSFET N-CH 950V 2A TO251
RoHS: Compliant
Min Qty: 1
Container: Tube		1950In Stock
  • 6000:$0.4050
  • 3000:$0.4253
  • 1500:$0.4556
  • 100:$0.6987
  • 25:$0.8504
  • 10:$0.8960
  • 1:$1.0000
IPU95R3K7P7AKMA1
DISTI # 31263314		Infineon Technologies AGLOW POWER_NEW1500
  • 10000:$0.4899
  • 2500:$0.4998
  • 1000:$0.5217
  • 500:$0.5891
  • 100:$0.6614
  • 16:$0.9505
IPU95R3K7P7AKMA1
DISTI # 32638670		Infineon Technologies AGLOW POWER_NEW1176
  • 500:$0.5445
  • 100:$0.6168
  • 28:$0.8019
IPU95R3K7P7AKMA1
DISTI # IPU95R3K7P7AKMA1		Infineon Technologies AGTrans MOSFET N-CH 950V 2A 3-Pin TO-251 Tube - Rail/Tube (Alt: IPU95R3K7P7AKMA1)
RoHS: Compliant
Min Qty: 1500
Container: Tube		Americas - 0
  • 15000:$0.3669
  • 9000:$0.3739
  • 6000:$0.3869
  • 3000:$0.4009
  • 1500:$0.4159
IPU95R3K7P7AKMA1
DISTI # 71AC0403		Infineon Technologies AGMOSFET, 950V, 2A, 150DEG C, 22W,Transistor Polarity:N Channel,Continuous Drain Current Id:2A,Drain Source Voltage Vds:950V,On Resistance Rds(on):3.11ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes257
  • 10000:$0.3750
  • 2500:$0.3890
  • 1000:$0.4380
  • 500:$0.5560
  • 100:$0.6290
  • 10:$0.8180
  • 1:$0.9600
IPU95R3K7P7AKMA1
DISTI # 726-IPU95R3K7P7AKMA1		Infineon Technologies AGMOSFET 950 V CoolMOS P7
RoHS: Compliant		1935
  • 1:$0.9500
  • 10:$0.8100
  • 100:$0.6230
  • 500:$0.5500
  • 1000:$0.4340
  • 2500:$0.3850
  • 10000:$0.3710
IPU95R3K7P7AKMA1
DISTI # IPU95R3K7P7		Infineon Technologies AGTransistor: N-MOSFET,unipolar,950V,1.4A,22W,IPAK300
  • 75:$0.5100
  • 25:$0.5700
  • 5:$0.6500
  • 1:$0.7200
IPU95R3K7P7AKMA1
DISTI # XSKDRABV0030589		Infineon Technologies AG 
RoHS: Compliant		4500 in Stock0 on Order
  • 4500:$0.6064
  • 1500:$0.6497
IPU95R3K7P7AKMA1
DISTI # 2916137		Infineon Technologies AGMOSFET, 950V, 2A, 150DEG C, 22W
RoHS: Compliant		182
  • 5000:$0.5850
  • 1000:$0.6160
  • 500:$0.6520
  • 250:$0.7530
  • 100:$0.8910
  • 25:$1.0900
  • 5:$1.2600
IPU95R3K7P7AKMA1
DISTI # 2916137		Infineon Technologies AGMOSFET, 950V, 2A, 150DEG C, 22W182
  • 500:£0.4030
  • 250:£0.4300
  • 100:£0.4570
  • 25:£0.5930
  • 5:£0.6640
Bild Teil # Beschreibung
NTHL080N120SC1

Mfr.#: NTHL080N120SC1

OMO.#: OMO-NTHL080N120SC1

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IPN95R1K2P7ATMA1

Mfr.#: IPN95R1K2P7ATMA1

OMO.#: OMO-IPN95R1K2P7ATMA1

 MOSFET 950 V CoolMOS P7
IPN95R2K0P7ATMA1

Mfr.#: IPN95R2K0P7ATMA1

OMO.#: OMO-IPN95R2K0P7ATMA1

 MOSFET 950 V CoolMOS P7
IPU95R1K2P7AKMA1

Mfr.#: IPU95R1K2P7AKMA1

OMO.#: OMO-IPU95R1K2P7AKMA1

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IPU95R2K0P7AKMA1

Mfr.#: IPU95R2K0P7AKMA1

OMO.#: OMO-IPU95R2K0P7AKMA1

 MOSFET 950 V CoolMOS P7
STD3N95K5AG

Mfr.#: STD3N95K5AG

OMO.#: OMO-STD3N95K5AG

 MOSFET Automotive-grade N-channel 950 V, 4.3 Ohm typ., 2 A MDmesh K5 Power MOSFET in a DPAK package
STU3LN80K5

Mfr.#: STU3LN80K5

OMO.#: OMO-STU3LN80K5

 MOSFET N-channel 800 V, 2.75 Ohm typ., 2 A MDmesh K5 Power MOSFET in an IPAK package
STD3N95K5AG

Mfr.#: STD3N95K5AG

OMO.#: OMO-STD3N95K5AG-STMICROELECTRONICS

 Trans MOSFET N-CH 950V 2A Automotive 3-Pin(2+Tab) DPAK T/R
STU3LN80K5

Mfr.#: STU3LN80K5

OMO.#: OMO-STU3LN80K5-STMICROELECTRONICS

 MOSFET N-CHANNEL 800V 2A IPAK
IPN95R2K0P7ATMA1

Mfr.#: IPN95R2K0P7ATMA1

OMO.#: OMO-IPN95R2K0P7ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 950V 4A SOT223
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von IPU95R3K7P7AKMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,95 $
0,95 $
10
0,81 $
8,10 $
100
0,62 $
62,30 $
500
0,55 $
275,00 $
1000
0,43 $
434,00 $
2500
0,38 $
962,50 $
10000
0,37 $
3 710,00 $
25000
0,36 $
8 975,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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