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SI4100DY-T1-GE3

SI4100DY-T1-GE3
Mfr. #:
SI4100DY-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 100V 6.8A 8-SOIC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4100DY-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Produktkategorie
FETs - Einzeln
Verpackung
Spule
Teil-Aliasnamen
SI4100DY-GE3
Gewichtseinheit
0.006596 oz
Montageart
SMD/SMT
Paket-Koffer
SOIC-Narrow-8
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
2.5 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
10 ns
Anstiegszeit
12 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
4.4 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Source-Threshold-Voltage
4.5 V
Rds-On-Drain-Source-Widerstand
63 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
12 ns 15 ns
Typische-Einschaltverzögerungszeit
15 ns 10 ns
Qg-Gate-Ladung
13.5 nC
Kanal-Modus
Erweiterung
Tags
SI4100DY-T1, SI4100DY-T, SI4100DY, SI4100D, SI4100, Si410, SI41, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SI4100DY-T1-GE3 N-channel MOSFET Transistor; 6.8 A; 100 V; 8-Pin SOIC
***et
Trans MOSFET N-CH 100V 4.4A 8-Pin SOIC N T/R
***ure Electronics
Si4100DY Series 100 V 6.8 A 63 mOhm Surface Mount N-Channel MOSFET - SO-8
***nell
MOSFET, N-CH, 100V, 6.8A, SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:100V; On Resistance Rds(on):51mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.8A; Power Dissipation Pd:6W; Voltage Vgs Max:20V
Teil # Mfg. Beschreibung Aktie Preis
SI4100DY-T1-GE3
DISTI # V72:2272_09216442		Vishay IntertechnologiesTrans MOSFET N-CH 100V 4.4A 8-Pin SOIC N T/R
RoHS: Compliant		7330
  • 6000:$0.5445
  • 3000:$0.5502
  • 1000:$0.5566
  • 500:$0.6236
  • 250:$0.7096
  • 100:$0.7174
  • 25:$0.8901
  • 10:$0.9008
  • 1:$1.0457
SI4100DY-T1-GE3
DISTI # SI4100DY-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 100V 6.8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2220In Stock
  • 1000:$0.6458
  • 500:$0.8180
  • 100:$1.0548
  • 10:$1.3350
  • 1:$1.5100
SI4100DY-T1-GE3
DISTI # SI4100DY-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 100V 6.8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2220In Stock
  • 1000:$0.6458
  • 500:$0.8180
  • 100:$1.0548
  • 10:$1.3350
  • 1:$1.5100
SI4100DY-T1-GE3
DISTI # SI4100DY-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 100V 6.8A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 2500:$0.5852
SI4100DY-T1-GE3
DISTI # 26723074		Vishay IntertechnologiesTrans MOSFET N-CH 100V 4.4A 8-Pin SOIC N T/R
RoHS: Compliant		7330
  • 6000:$0.5445
  • 3000:$0.5502
  • 1000:$0.5566
  • 500:$0.6236
  • 250:$0.7096
  • 100:$0.7174
  • 25:$0.8901
  • 14:$0.9008
SI4100DY-T1-GE3
DISTI # SI4100DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 4.4A 8-Pin SOIC N T/R (Alt: SI4100DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 2500:€0.6829
  • 5000:€0.4659
  • 10000:€0.4009
  • 15000:€0.3699
  • 25000:€0.3439
SI4100DY-T1-GE3
DISTI # SI4100DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 4.4A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4100DY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.5409
  • 5000:$0.5249
  • 10000:$0.5039
  • 15000:$0.4899
  • 25000:$0.4769
SI4100DY-T1-GE3
DISTI # SI4100DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 4.4A 8-Pin SOIC N T/R (Alt: SI4100DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    SI4100DY-T1-GE3
    DISTI # 15R4959    		Vishay IntertechnologiesMOSFET Transistor, N Channel, 6.8 A, 100 V, 51 mohm, 10 V, 2 V0
    • 1:$0.6310
    • 2500:$0.6010
    • 5000:$0.5630
    • 7500:$0.5320
    SI4100DY-T1-GE3
    DISTI # 55R1914    		Vishay IntertechnologiesMOSFET, N CHANNEL, 100V, 6.8A, SO8,Transistor Polarity:N Channel,Continuous Drain Current Id:6.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.051ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes4565
    • 1:$1.3300
    • 10:$1.1000
    • 25:$1.0100
    • 50:$0.9270
    • 100:$0.8400
    • 250:$0.7820
    • 500:$0.7230
    SI4100DY-T1-GE3
    DISTI # 70616169    		Vishay SiliconixSI4100DY-T1-GE3 N-channel MOSFET Transistor,6.8 A,100 V,8-Pin SOIC
    RoHS: Compliant    		0
    • 100:$0.6700
    • 200:$0.6570
    • 500:$0.6370
    • 1000:$0.6100
    • 2500:$0.5700
    SI4100DY-T1-GE3
    DISTI # 781-SI4100DY-GE3    		Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs SO-8
    RoHS: Compliant    		1251
    • 1:$1.3300
    • 10:$1.1000
    • 100:$0.8400
    • 500:$0.7230
    • 1000:$0.6350
    • 2500:$0.6340
    SI4100DY-T1-GE3
    DISTI # SI4100DY-GE3    		Vishay IntertechnologiesN-Ch 100V 6,8A 2,5W 0,063R SO8
    RoHS: Not Compliant    		2200
    • 50:€0.4120
    • 100:€0.3520
    • 500:€0.3220
    • 2500:€0.3115
    SI4100DY-T1-GE3
    DISTI # 1779251    		Vishay IntertechnologiesMOSFET, N-CH, 100V, 6.8A, SO8
    RoHS: Compliant    		4565
    • 1:$2.1000
    • 10:$1.7500
    • 100:$1.3400
    • 500:$1.1500
    • 1000:$1.0100
    • 2500:$1.0100
    SI4100DY-T1-GE3
    DISTI # 1779251RL    		Vishay IntertechnologiesMOSFET, N-CH, 100V, 6.8A, SO8
    RoHS: Compliant    		0
    • 1:$2.1000
    • 10:$1.7500
    • 100:$1.3400
    • 500:$1.1500
    • 1000:$1.0100
    • 2500:$1.0100
    SI4100DY-T1-GE3
    DISTI # C1S803605110808    		Vishay IntertechnologiesTrans MOSFET N-CH 100V 4.4A 8-Pin SOIC N T/R
    RoHS: Not Compliant    		7330
    • 250:$0.7096
    • 100:$0.7174
    • 25:$0.8901
    • 10:$0.9008
    SI4100DY-T1-GE3
    DISTI # XSFP00000138693    		Vishay Siliconix 
    RoHS: Compliant    		30285
    • 2500:$1.0000
    • 30285:$0.9091
    SI4100DY-T1-GE3Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs SO-8
    RoHS: Compliant    		Americas -
      SI4100DY-T1-GE3
      DISTI # 1779251      		Vishay IntertechnologiesMOSFET, N-CH, 100V, 6.8A, SO8
      RoHS: Compliant      		4565
      • 5:£1.0300
      • 25:£0.8870
      • 100:£0.6770
      • 250:£0.6310
      • 500:£0.5830
      Bild Teil # Beschreibung
      SI4100DY-T1-E3

      Mfr.#: SI4100DY-T1-E3

      OMO.#: OMO-SI4100DY-T1-E3

      		 MOSFET 100V Vds 20V Vgs SO-8
      SI4100DY-T1-GE3

      Mfr.#: SI4100DY-T1-GE3

      OMO.#: OMO-SI4100DY-T1-GE3

      		 MOSFET 100V Vds 20V Vgs SO-8
      SI4100D

      Mfr.#: SI4100D

      OMO.#: OMO-SI4100D-1190

      		 Neu und Original
      SI4100DY

      Mfr.#: SI4100DY

      OMO.#: OMO-SI4100DY-1190

      		 Neu und Original
      SI4100DY-T1

      Mfr.#: SI4100DY-T1

      OMO.#: OMO-SI4100DY-T1-1190

      		 Neu und Original
      SI4100DY-T1-E3

      Mfr.#: SI4100DY-T1-E3

      OMO.#: OMO-SI4100DY-T1-E3-VISHAY

      		 MOSFET N-CH 100V 6.8A 8-SOIC
      SI4100DY-T1-GE3

      Mfr.#: SI4100DY-T1-GE3

      OMO.#: OMO-SI4100DY-T1-GE3-VISHAY

      		 MOSFET N-CH 100V 6.8A 8-SOIC
      SI4100DY-TI-GE3

      Mfr.#: SI4100DY-TI-GE3

      OMO.#: OMO-SI4100DY-TI-GE3-1190

      		 Neu und Original
      SI4100DY-T1-E3-CUT TAPE

      Mfr.#: SI4100DY-T1-E3-CUT TAPE

      OMO.#: OMO-SI4100DY-T1-E3-CUT-TAPE-1190

      		 Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1500
      Menge eingeben:
      Der aktuelle Preis von SI4100DY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,47 $
      0,47 $
      10
      0,45 $
      4,48 $
      100
      0,42 $
      42,42 $
      500
      0,40 $
      200,30 $
      1000
      0,38 $
      377,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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