 | | | |
| PartNumber | SI4100DY-T1-E3 | SI4101DY-T1-GE3 | SI4100DY-T1-GE3 |
| Description | MOSFET 100V Vds 20V Vgs SO-8 | MOSFET -30V Vds 20V Vgs SO-8 | MOSFET 100V Vds 20V Vgs SO-8 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | Y | E |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SO-8 | SO-8 | - |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Series | SI4 | SI4 | SI4 |
| Width | 3.9 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | SI4100DY-E3 | - | SI4100DY-GE3 |
| Unit Weight | 0.006596 oz | 0.017870 oz | 0.006596 oz |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | P-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 30 V | - |
| Id Continuous Drain Current | - | 25.7 A | - |
| Rds On Drain Source Resistance | - | 5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 2.5 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 203 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 6 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 P-Channel | - |
| Forward Transconductance Min | - | 72 S | - |
| Fall Time | - | 11 ns | - |
| Rise Time | - | 9 ns | - |
| Typical Turn Off Delay Time | - | 80 ns | - |
| Typical Turn On Delay Time | - | 20 ns | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
Si4103DY-T1-GE3 | MOSFET -30V Vds 20V Vgs SO-8 | |
| SI4100DY-T1-E3 | MOSFET 100V Vds 20V Vgs SO-8 | ||
| SI4102DY-T1-GE3 | MOSFET 100V Vds 20V Vgs SO-8 | ||
| SI4101DY-T1-GE3 | MOSFET -30V Vds 20V Vgs SO-8 | ||
| SI4102DY-T1-E3 | MOSFET RECOMMENDED ALT 781-SI4102DY-GE3 | ||
| SI4104DY-T1-GE3 | MOSFET RECOMMENDED ALT 781-SI4100DY-GE3 | ||
| SI4108DY-T1-GE3 | MOSFET RECOMMENDED ALT 78-SI4090DY-T1-GE3 | ||
| SI4100DY-T1-GE3 | MOSFET 100V Vds 20V Vgs SO-8 | ||
| SI4104DY-T1-E3 | MOSFET RECOMMENDED ALT 781-SI4100DY-GE3 | ||
Vishay |
SI4104DY-T1-E3 | RF Bipolar Transistors MOSFET 100V 4.6A 5.0W 105mohm @ 10V | |
| SI4100DY-T1-E3 | MOSFET N-CH 100V 6.8A 8-SOIC | ||
| SI4100DY-T1-GE3 | MOSFET N-CH 100V 6.8A 8-SOIC | ||
| SI4101DY-T1-GE3 | MOSFET P-CH 30V 25.7A 8SOIC | ||
| SI4102DY-T1-E3 | MOSFET N-CH 100V 3.8A 8-SOIC | ||
| SI4102DY-T1-GE3 | MOSFET N-CH 100V 3.8A 8-SOIC | ||
| SI4104DY-T1-GE3 | MOSFET N-CH 100V 4.6A 8-SOIC | ||
| SI4108DY-T1-GE3 | MOSFET N-CH 75V 20.5A 8-SOIC | ||
| SI4103DY-T1-GE3 | MOSFET P-CHAN 30V SO-8 | ||
| SI410 | Neu und Original | ||
| SI4100 | Neu und Original | ||
| SI4100D | Neu und Original | ||
| SI4100DY | Neu und Original | ||
| SI4100DY-T1 | Neu und Original | ||
| SI4100DY-TI-GE3 | Neu und Original | ||
| SI4101DY | Neu und Original | ||
| SI4101DY-T1-E3 | Neu und Original | ||
| SI4102DY-E3 | Neu und Original | ||
| SI4102DYT1E3 | Small Signal Field-Effect Transistor, 2.7A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SI4104 | Neu und Original | ||
| SI4108 | Neu und Original | ||
| SI4108DY | Neu und Original | ||
| SI410A | Neu und Original | ||
| SI410DY-T1 | Neu und Original | ||
| SI4100DY-T1-E3-CUT TAPE | Neu und Original |