SI4104DY-T1-GE3

SI4104DY-T1-GE3
Mfr. #:
SI4104DY-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET RECOMMENDED ALT 781-SI4100DY-GE3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4104DY-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4104DY-T1-GE3 DatasheetSI4104DY-T1-GE3 Datasheet (P4-P6)SI4104DY-T1-GE3 Datasheet (P7)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
1.75 mm
Länge:
4.9 mm
Serie:
SI4
Breite:
3.9 mm
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Teil # Aliase:
SI4104DY-GE3
Gewichtseinheit:
0.006596 oz
Tags
SI4104, Si410, SI41, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 100V 3.2A 8-Pin SOIC N T/R
*** Source Electronics
MOSFET N-CH 100V 4.6A 8-SOIC
***ied Electronics & Automation
TRANSITOR, SI4559EY
***ment14 APAC
MOSFET, N-CH, 100V, 4.6A, SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:4.6A; Drain Source Voltage Vds:100V; On Resistance Rds(on):85mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.6A; Power Dissipation Pd:5W; Voltage Vgs Max:20V
Teil # Mfg. Beschreibung Aktie Preis
SI4104DY-T1-GE3
DISTI # SI4104DY-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 100V 4.6A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    SI4104DY-T1-GE3
    DISTI # SI4104DY-T1-GE3CT-ND
    Vishay SiliconixMOSFET N-CH 100V 4.6A 8-SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      SI4104DY-T1-GE3
      DISTI # SI4104DY-T1-GE3DKR-ND
      Vishay SiliconixMOSFET N-CH 100V 4.6A 8-SOIC
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        SI4104DY-T1-GE3
        DISTI # 781-SI4104DY-GE3
        Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI4100DY-GE3
        RoHS: Compliant
        0
          Bild Teil # Beschreibung
          SI4104DY-T1-GE3

          Mfr.#: SI4104DY-T1-GE3

          OMO.#: OMO-SI4104DY-T1-GE3

          MOSFET RECOMMENDED ALT 781-SI4100DY-GE3
          SI4104DY-T1-E3

          Mfr.#: SI4104DY-T1-E3

          OMO.#: OMO-SI4104DY-T1-E3

          MOSFET RECOMMENDED ALT 781-SI4100DY-GE3
          SI4104DY-T1-E3

          Mfr.#: SI4104DY-T1-E3

          OMO.#: OMO-SI4104DY-T1-E3-VISHAY

          RF Bipolar Transistors MOSFET 100V 4.6A 5.0W 105mohm @ 10V
          SI4104DY-T1-GE3

          Mfr.#: SI4104DY-T1-GE3

          OMO.#: OMO-SI4104DY-T1-GE3-VISHAY

          MOSFET N-CH 100V 4.6A 8-SOIC
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          1000
          Menge eingeben:
          Der aktuelle Preis von SI4104DY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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