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HGTG12N60A4D

HGTG12N60A4D
Mfr. #:
HGTG12N60A4D
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
IGBT Transistors 600V N-Channel IGBT SMPS Series
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HGTG12N60A4D Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
IGBT-Transistoren
RoHS:
E
Technologie:
Si
Paket / Koffer:
TO-247-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
600 V
Kollektor-Emitter-Sättigungsspannung:
2 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
54 A
Pd - Verlustleistung:
167 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
HGTG12N60A4D
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
54 A
Höhe:
20.82 mm
Länge:
15.87 mm
Breite:
4.82 mm
Marke:
ON Semiconductor / Fairchild
Kontinuierlicher Kollektorstrom:
60 A
Gate-Emitter-Leckstrom:
+/- 250 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
450
Unterkategorie:
IGBTs
Teil # Aliase:
HGTG12N60A4D_NL
Gewichtseinheit:
0.225401 oz
Tags
HGTG12N60A4D, HGTG12N60A, HGTG12N, HGTG12, HGTG1, HGTG, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***eco
600V SMPS Series N-Channel IGBT Transistor with Anti-Parallel Hyperfast Diode
***ical
Trans IGBT Chip N=-CH 600V 54A 167000mW 3-Pin(3+Tab) TO-247 Rail
***inecomponents.com
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfas
***p One Stop Global
Trans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-247 Rail
***ure Electronics
HGTG12N60A4D Series 600 V 54 A Flange Mount SMPS N-Channel IGBT-TO-247
***et
PWR IGBT 12A,600V,SMPS SERIES N-CH W/DIODE TO-247
***ser
IGBTs 600V, N-Channel IGBT SMPS Series
***o-Tech
Transistor IGBT N-Ch 600V 54A TO247
***i-Key
IGBT N-CH SMPS 600V 54A TO247
***ark
Pt P To247 600V Smps Rohs Compliant: Yes
***Semiconductor
600V, SMPS IGBT
***rchild Semiconductor
The HGTG12N60A4D combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
***nell
IGBT, TO-247; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:54A; Voltage, Vce Sat Max:2.7V; Power Dissipation:167W; Case Style:TO-247; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Alternate Case Style:SOT-249; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:96A; Device Marking:HGTG12N60A4D; No. of Pins:3; Power, Pd:167W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:95ns; Time, Rise:16ns; Transistors, No. of:1
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:54A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:167W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-249; Current Ic Continuous a Max:54A; Current Temperature:25°C; Device Marking:HGTG12N60A4D; Fall Time tf:95ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:167W; Power Dissipation Pd:167W; Power Dissipation Pd:167W; Pulsed Current Icm:96A; Rise Time:16ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
Teil # Mfg. Beschreibung Aktie Preis
HGTG12N60A4D
DISTI # V99:2348_06359064		ON SemiconductorTrans IGBT Chip N-CH 600V 54A 167000mW 3-Pin(3+Tab) TO-247 Rail265
  • 500:$2.2090
  • 250:$2.4550
  • 100:$2.5410
  • 50:$2.8230
  • 25:$3.1370
  • 10:$3.2320
  • 1:$4.0502
HGTG12N60A4D
DISTI # V36:1790_06359064		ON SemiconductorTrans IGBT Chip N-CH 600V 54A 167000mW 3-Pin(3+Tab) TO-247 Rail57
  • 500:$2.2090
  • 250:$2.4550
  • 100:$2.5410
  • 50:$2.8230
  • 25:$3.1370
  • 10:$3.2320
  • 1:$4.0502
HGTG12N60A4D
DISTI # HGTG12N60A4D-ND		ON SemiconductorIGBT 600V 54A 167W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		277In Stock
  • 5400:$1.3163
  • 2700:$1.3327
  • 900:$1.7276
  • 450:$1.9744
  • 25:$2.4680
  • 10:$2.6160
  • 1:$2.9100
HGTG12N60A4D
DISTI # 30302967		ON SemiconductorTrans IGBT Chip N-CH 600V 54A 167000mW 3-Pin(3+Tab) TO-247 Rail265
  • 5:$4.0502
HGTG12N60A4D
DISTI # 33650743		ON SemiconductorTrans IGBT Chip N-CH 600V 54A 167000mW 3-Pin(3+Tab) TO-247 Rail57
  • 5:$4.0502
HGTG12N60A4D
DISTI # HGTG12N60A4D		ON SemiconductorTrans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG12N60A4D)
RoHS: Compliant
Min Qty: 30
Container: Tube		Americas - 420
  • 150:$1.3900
  • 300:$1.3900
  • 60:$1.4900
  • 90:$1.4900
  • 30:$1.5900
HGTG12N60A4D
DISTI # HGTG12N60A4D		ON SemiconductorTrans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG12N60A4D)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€1.0149
  • 500:€1.0529
  • 100:€1.0929
  • 50:€1.1369
  • 25:€1.1849
  • 10:€1.2919
  • 1:€1.4219
HGTG12N60A4D
DISTI # HGTG12N60A4D		ON SemiconductorTrans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: HGTG12N60A4D)
RoHS: Compliant
Min Qty: 175
Container: Bulk		Americas - 0
  • 1750:$1.6900
  • 175:$1.7900
  • 350:$1.7900
  • 525:$1.7900
  • 875:$1.7900
HGTG12N60A4D
DISTI # HGTG12N60A4D		ON SemiconductorTrans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG12N60A4D)
RoHS: Compliant
Min Qty: 450		Asia - 0
  • 22500:$1.9667
  • 11250:$2.0000
  • 4500:$2.0345
  • 2250:$2.1071
  • 1350:$2.1852
  • 900:$2.2692
  • 450:$2.3600
HGTG12N60A4D
DISTI # 58K1585		ON SemiconductorTrans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K1585)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 500:$3.0200
  • 250:$3.1900
  • 100:$3.3500
  • 50:$3.5200
  • 25:$3.6800
  • 10:$3.8500
  • 1:$4.2800
HGTG12N60A4D
DISTI # 58K1585		ON SemiconductorIGBT, 600V,54A, TO-247,DC Collector Current:54A,Collector Emitter Saturation Voltage Vce(on):2V,Power Dissipation Pd:167W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes358
  • 500:$3.0200
  • 250:$3.1900
  • 100:$3.3500
  • 50:$3.5200
  • 25:$3.6800
  • 10:$3.8500
  • 1:$4.2800
HGTG12N60A4D
DISTI # 05M3502		ON SemiconductorIGBT Single Transistor, General Purpose, 54 A, 2.7 V, 167 W, 600 V, TO-247, 3 RoHS Compliant: Yes15570
  • 500:$1.7500
  • 250:$1.8100
  • 100:$2.1600
  • 50:$2.4900
  • 25:$2.6600
  • 10:$3.0300
  • 1:$3.5000
HGTG12N60A4D.
DISTI # 84AC1732		ON SemiconductorPT P TO247 600V SMPS ROHS COMPLIANT: YES420
  • 500:$3.0200
  • 250:$3.1900
  • 100:$3.3500
  • 50:$3.5200
  • 25:$3.7600
  • 10:$3.9300
  • 1:$4.3700
HGTG12N60A4D
DISTI # 512-HGTG12N60A4D		ON SemiconductorIGBT Transistors 600V N-Channel IGBT SMPS Series
RoHS: Compliant		0
    HGTG12N60A4DON Semiconductor 
    RoHS: Not Compliant    		2070
    • 1000:$1.2500
    • 500:$1.3200
    • 100:$1.3700
    • 25:$1.4300
    • 1:$1.5400
    HGTG12N60A4DHarris Semiconductor 10
      HGTG12N60A4D
      DISTI # HGTG12N60A4D      		ON SemiconductorTransistor: IGBT,600V,23A,167W,TO247-3476
      • 150:$1.4500
      • 30:$1.7100
      • 10:$1.8800
      • 3:$2.2100
      • 1:$2.3500
      HGTG12N60A4D
      DISTI # 1057677      		ON SemiconductorIGBT, TO-24718608
      • 500:£1.9000
      • 250:£2.1200
      • 100:£2.4200
      • 10:£2.7200
      • 1:£3.4100
      HGTG12N60A4D
      DISTI # 1057677      		ON SemiconductorIGBT, TO-247
      RoHS: Compliant      		19341
      • 1350:$3.0500
      • 900:$3.6200
      • 450:$4.0300
      • 10:$5.1900
      • 1:$5.7700
      HGTG12N60A4D
      DISTI # XSKDRABS0006133      		ON SEMICONDUCTOR 
      RoHS: Compliant      		2544 in Stock0 on Order
      • 2544:$2.1300
      • 450:$2.2900
      Bild Teil # Beschreibung
      MGJ2D051509SC

      Mfr.#: MGJ2D051509SC

      OMO.#: OMO-MGJ2D051509SC-MURATA-POWER-SOLUTIONS

      		 Isolated DC/DC Converters 2W 5Vin 15/-8.7Vout 80/40mA SIP
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2000
      Menge eingeben:
      Der aktuelle Preis von HGTG12N60A4D dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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