 |  | | |
| PartNumber | HGTG12N60A4D | HGTG12N60A4 | HGTG12N60B3 |
| Description | IGBT Transistors 600V N-Channel IGBT SMPS Series | IGBT 600V 54A 167W TO247 | IGBT 600V 27A 104W TO247 |
| Manufacturer | ON Semiconductor | - | Fairchild Semiconductor |
| Product Category | IGBT Transistors | - | IGBTs - Single |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Package / Case | TO-247-3 | - | - |
| Mounting Style | Through Hole | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Collector Emitter Saturation Voltage | 2 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 54 A | - | - |
| Pd Power Dissipation | 167 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | HGTG12N60A4D | - | - |
| Packaging | Tube | - | Tube |
| Continuous Collector Current Ic Max | 54 A | - | - |
| Height | 20.82 mm | - | - |
| Length | 15.87 mm | - | - |
| Width | 4.82 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Continuous Collector Current | 60 A | - | - |
| Gate Emitter Leakage Current | +/- 250 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 450 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | HGTG12N60A4D_NL | - | - |
| Unit Weight | 0.225401 oz | - | - |
| Package Case | - | - | TO-3P-3, SC-65-3 |
| Input Type | - | - | Standard |
| Mounting Type | - | - | Through Hole |
| Supplier Device Package | - | - | TO-247AD |
| Power Max | - | - | 104W |
| Reverse Recovery Time trr | - | - | - |
| Current Collector Ic Max | - | - | 27A |
| Voltage Collector Emitter Breakdown Max | - | - | 600V |
| IGBT Type | - | - | - |
| Current Collector Pulsed Icm | - | - | 110A |
| Vce on Max Vge Ic | - | - | 2.1V @ 15V, 12A |
| Switching Energy | - | - | 150μJ (on), 250μJ (off) |
| Gate Charge | - | - | 51nC |
| Td on off 25°C | - | - | 26ns/150ns |
| Test Condition | - | - | 480V, 12A, 25 Ohm, 15V |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
HGTG12N60C3D | IGBT Transistors 24a 600V IGBT UFS N-Channel | |
| HGTG12N60A4D | IGBT Transistors 600V N-Channel IGBT SMPS Series | ||
ON Semiconductor |
HGTG12N60C3D | IGBT Transistors 24a 600V IGBT UFS N-Channel | |
| HGTG12N60A4 | IGBT 600V 54A 167W TO247 | ||
| HGTG12N60A4D | IGBT 600V 54A 167W TO247 | ||
| HGTG12N60B3 | IGBT 600V 27A 104W TO247 | ||
| HGTG120N60B3D | Neu und Original | ||
| HGTG12N60A4D 12N60A4D | Neu und Original | ||
| HGTG12N60A4D,12N60A4D,12 | Neu und Original | ||
| HGTG12N60A4D,HGTG10N120B | Neu und Original | ||
| HGTG12N60A4D,HGTG10N120BND, | Neu und Original | ||
| HGTG12N60A4D-NL | Neu und Original | ||
| HGTG12N60A4_NL | Neu und Original | ||
| HGTG12N60B3D | - Bulk (Alt: HGTG12N60B3D) | ||
| HGTG12N60D1 | Neu und Original | ||
| HGTG12N60D1D | Insulated Gate Bipolar Transistor, 21A I(C), 600V V(BR)CES, N-Channel, TO-247 | ||
| HGTG12N60C3DR | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel |