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HGTG12N60C3D

HGTG12N60C3D
Mfr. #:
HGTG12N60C3D
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
IGBT Transistors 24a 600V IGBT UFS N-Channel
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HGTG12N60C3D Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
IGBT-Transistoren
RoHS:
E
Technologie:
Si
Paket / Koffer:
TO-247-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
600 V
Kollektor-Emitter-Sättigungsspannung:
1.65 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
24 A
Pd - Verlustleistung:
104 W
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
HGTG12N60C3D
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
24 A
Höhe:
20.82 mm
Länge:
15.87 mm
Breite:
4.82 mm
Marke:
ON Semiconductor / Fairchild
Kontinuierlicher Kollektorstrom:
24 A
Gate-Emitter-Leckstrom:
+/- 100 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
450
Unterkategorie:
IGBTs
Teil # Aliase:
HGTG12N60C3D_NL
Gewichtseinheit:
0.225753 oz
Tags
HGTG12N, HGTG12, HGTG1, HGTG, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
***ical
Trans IGBT Chip N=-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-247 Rail
***p One Stop Global
Trans IGBT Chip N-CH 600V 24A 3-Pin(3+Tab) TO-247 Rail
***inecomponents.com
600V,24A,UFS,SERIES NCH IGBT W/ANTI-PARALLEL HYPERFAST DIODE
***et
UFS SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIOD
***ser
IGBTs 24a, 600V, IGBT UFS N-Channel
***o-Tech
Transistor IGBT N-Ch 600V 24A TO247
***th Star Micro
IGBT UFS N-CHAN 600V 24A TO-247
***nell
IGBT, N, 3-TO-247; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:600V; Current Ic Continuous a Max:24A; Voltage, Vce Sat Max:2V; Power Dissipation:104W; Case Style:TO-247; Termination Type:Through Hole
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:24A; Collector Emitter Saturation Voltage, Vce(sat):1.65V; Power Dissipation, Pd:104W; Package/Case:3-TO-247; C-E Breakdown Voltage:600V ;RoHS Compliant: Yes
***ment14 APAC
IGBT, N, 3-TO-247; Transistor Type:IGBT; DC Collector Current:24A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:104W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:24A; Package / Case:TO-247; Power Dissipation Max:104W; Power Dissipation Pd:104W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***rchild Semiconductor
The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage dorp varies only moderately 25°C and 150°C. The IBGT used is the development type TA49123. The diode in anti parallel with the IGBT is the development type TA49061.The IGBT is ideal for mant high voltage switching applications operating at moderate frquencies where low conduction losses are essential.Formerly Developmental Type TA49117.
Teil # Mfg. Beschreibung Aktie Preis
HGTG12N60C3D
DISTI # V79:2366_17784181		ON SemiconductorPTPIGBT TO247 24A 600V17
  • 2500:$3.1600
  • 1000:$3.3260
  • 500:$3.9380
  • 250:$4.3830
  • 100:$4.6150
  • 10:$5.3060
  • 1:$6.8332
HGTG12N60C3D
DISTI # V36:1790_06359200		ON SemiconductorPTPIGBT TO247 24A 600V0
    HGTG12N60C3D
    DISTI # HGTG12N60C3D-ND    		ON SemiconductorIGBT 600V 24A 104W TO247
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		10In Stock
    • 1350:$3.5349
    • 900:$4.1914
    • 450:$4.6711
    • 10:$6.0090
    • 1:$6.6900
    HGTG12N60C3D
    DISTI # 32314369    		ON SemiconductorPTPIGBT TO247 24A 600V1674
    • 900:$4.3560
    • 9:$4.8510
    HGTG12N60C3D
    DISTI # 30249921    		ON SemiconductorPTPIGBT TO247 24A 600V17
    • 2500:$3.3970
    • 1000:$3.5755
    • 500:$4.2333
    • 250:$4.7117
    • 100:$4.9611
    • 10:$5.7039
    • 5:$6.6779
    HGTG12N60C3D
    DISTI # HGTG12N60C3D    		ON SemiconductorTrans IGBT Chip N-CH 600V 24A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG12N60C3D)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1000:€2.3900
    • 500:€2.5900
    • 100:€2.6900
    • 50:€2.7900
    • 25:€2.8900
    • 10:€2.9900
    • 1:€3.2900
    HGTG12N60C3D
    DISTI # HGTG12N60C3D    		ON SemiconductorTrans IGBT Chip N-CH 600V 24A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: HGTG12N60C3D)
    RoHS: Compliant
    Min Qty: 72
    Container: Bulk    		Americas - 0
    • 720:$4.2900
    • 216:$4.3900
    • 360:$4.3900
    • 72:$4.4900
    • 144:$4.4900
    HGTG12N60C3D
    DISTI # HGTG12N60C3D    		ON SemiconductorTrans IGBT Chip N-CH 600V 24A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG12N60C3D)
    RoHS: Compliant
    Min Qty: 450
    Container: Tube    		Americas - 0
    • 4500:$3.7900
    • 2700:$3.8900
    • 900:$3.9900
    • 1800:$3.9900
    • 450:$4.0900
    HGTG12N60C3D
    DISTI # 58K1586    		ON SemiconductorTrans IGBT Chip N-CH 600V 24A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K1586)
    RoHS: Compliant
    Min Qty: 1
    Container: Bulk    		Americas - 0
    • 1:$4.6900
    HGTG12N60C3D
    DISTI # 58K1586    		ON SemiconductorSINGLE IGBT, 600V, 24A,DC Collector Current:24A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:104W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes0
    • 500:$4.0300
    • 250:$4.4900
    • 100:$4.7400
    • 50:$4.9800
    • 25:$5.2200
    • 10:$5.4600
    • 1:$6.4200
    HGTG12N60C3D
    DISTI # 512-HGTG12N60C3D    		ON SemiconductorIGBT Transistors 24a 600V IGBT UFS N-Channel
    RoHS: Compliant    		110
    • 1:$6.3600
    • 10:$5.4100
    • 100:$4.6900
    • 250:$4.4500
    • 500:$3.9900
    • 1000:$3.3600
    • 2500:$3.1900
    HGTG12N60C3DFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-247
    RoHS: Compliant    		213
    • 1000:$4.5900
    • 500:$4.8300
    • 100:$5.0300
    • 25:$5.2500
    • 1:$5.6500
    HGTG12N60C3DHarris SemiconductorInsulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-247
    RoHS: Compliant    		6698
    • 1000:$4.5900
    • 500:$4.8300
    • 100:$5.0300
    • 25:$5.2500
    • 1:$5.6500
    HGTG12N60C3DRHarris SemiconductorInsulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel
    RoHS: Not Compliant    		659
    • 1000:$2.0400
    • 500:$2.1500
    • 100:$2.2400
    • 25:$2.3300
    • 1:$2.5100
    HGTG12N60C3D
    DISTI # HGTG12N60C3D    		ON SemiconductorTransistor: IGBT,600V,12A,104W,TO247-3133
    • 1:$2.1800
    • 3:$1.8800
    • 10:$1.7400
    • 30:$1.5600
    • 150:$1.4600
    HGTG12N60C3D
    DISTI # 1467936    		ON SemiconductorIGBT, N, 3-TO-247
    RoHS: Compliant    		0
    • 2500:$4.9100
    • 1000:$5.1700
    • 500:$6.1400
    • 250:$6.8500
    • 100:$7.2200
    • 10:$8.3200
    • 1:$9.7800
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    Verfügbarkeit
    Aktie:
    54
    Auf Bestellung:
    2037
    Menge eingeben:
    Der aktuelle Preis von HGTG12N60C3D dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    6,36 $
    6,36 $
    10
    5,41 $
    54,10 $
    100
    4,69 $
    469,00 $
    250
    4,45 $
    1 112,50 $
    500
    3,99 $
    1 995,00 $
    1000
    3,36 $
    3 360,00 $
    2500
    3,19 $
    7 975,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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