HGTG12N60C3DR

HGTG12N60C3DR
Mfr. #:
HGTG12N60C3DR
Hersteller:
Rochester Electronics, LLC
Beschreibung:
Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HGTG12N60C3DR Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
HGTG12N, HGTG12, HGTG1, HGTG, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key Marketplace
UFS SERIES N-CHANNEL IGBT
Teil # Mfg. Beschreibung Aktie Preis
HGTG12N60C3DRHarris Semiconductor24A, 600V, RUGGED, UFS SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL ULTRAFAST DIODE
RoHS: Not Compliant
659
  • 1000:$2.0400
  • 500:$2.1400
  • 100:$2.2300
  • 25:$2.3300
  • 1:$2.5100
Bild Teil # Beschreibung
HGTG12N60A4D

Mfr.#: HGTG12N60A4D

OMO.#: OMO-HGTG12N60A4D

IGBT Transistors 600V N-Channel IGBT SMPS Series
HGTG120N60B3D

Mfr.#: HGTG120N60B3D

OMO.#: OMO-HGTG120N60B3D-1190

Neu und Original
HGTG12N60A4

Mfr.#: HGTG12N60A4

OMO.#: OMO-HGTG12N60A4-ON-SEMICONDUCTOR

IGBT 600V 54A 167W TO247
HGTG12N60A4D,12N60A4D,12

Mfr.#: HGTG12N60A4D,12N60A4D,12

OMO.#: OMO-HGTG12N60A4D-12N60A4D-12-1190

Neu und Original
HGTG12N60A4D,HGTG10N120B

Mfr.#: HGTG12N60A4D,HGTG10N120B

OMO.#: OMO-HGTG12N60A4D-HGTG10N120B-1190

Neu und Original
HGTG12N60A4D,HGTG10N120BND,

Mfr.#: HGTG12N60A4D,HGTG10N120BND,

OMO.#: OMO-HGTG12N60A4D-HGTG10N120BND--1190

Neu und Original
HGTG12N60A4D-NL

Mfr.#: HGTG12N60A4D-NL

OMO.#: OMO-HGTG12N60A4D-NL-1190

Neu und Original
HGTG12N60A4_NL

Mfr.#: HGTG12N60A4_NL

OMO.#: OMO-HGTG12N60A4-NL-1190

Neu und Original
HGTG12N60B3

Mfr.#: HGTG12N60B3

OMO.#: OMO-HGTG12N60B3-ON-SEMICONDUCTOR

IGBT 600V 27A 104W TO247
HGTG12N60C3DR

Mfr.#: HGTG12N60C3DR

OMO.#: OMO-HGTG12N60C3DR-1190

Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1000
Menge eingeben:
Der aktuelle Preis von HGTG12N60C3DR dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,06 $
3,06 $
10
2,91 $
29,07 $
100
2,75 $
275,40 $
500
2,60 $
1 300,50 $
1000
2,45 $
2 448,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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