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DMN3016LSS-13

DMN3016LSS-13
Mfr. #:
DMN3016LSS-13
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET 30V N-Ch Enh FET 20Vdss 1.5W
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
DMN3016LSS-13 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
DMN3016LSS-13 DatasheetDMN3016LSS-13 Datasheet (P4-P6)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Eingebaute Dioden
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
10.3 A
Rds On - Drain-Source-Widerstand:
8 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.3 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
25.1 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
1.5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Serie:
DMN3016
Transistortyp:
1 N-Channel
Marke:
Eingebaute Dioden
Vorwärtstranskonduktanz - Min:
-
Abfallzeit:
5.6 ns
Produktart:
MOSFET
Anstiegszeit:
16.5 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
26.1 ns
Typische Einschaltverzögerungszeit:
4.8 ns
Gewichtseinheit:
0.002610 oz
Tags
DMN3016LS, DMN3016, DMN301, DMN30, DMN3, DMN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
DMN3016LSS Series 30 V 10.3 A N-Channel Enhancement Mode Mosfet - SOIC-8
***et
Trans MOSFET N-CH 30V 10.3A 8-Pin SO T/R
***ark
Mosfet, N-Ch, 30V, 10.3A, Soic Rohs Compliant: Yes
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
***ark
MOSFET Transistor, P Channel, -12 A, -30 V, 10 mohm, -10 V, -1.8 V
***ure Electronics
Single P-Channel 30 V 19.7 mOhm 52 nC HEXFET® Power Mosfet - SOIC-8
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ineon
Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
***nell
MOSFET,P CH,30V,12A,SO-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -12A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.8V; Power D
***eco
Transistor MOSFET Negative Channel 30 Volt 13A 8-Pin SOIC T/R
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.011Ohm;ID 13A;SO-8;PD 2.5W;VGS +/-20V;VF 1
***ure Electronics
Single N-Channel 30 V 0.011 Ohm 52 nC HEXFET® Power Mosfet - SOIC-8
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low Switching Losses; Low Conduction Losses
***ical
Trans MOSFET N-CH 30V 13A 8-Pin SOIC Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***el Electronic
Transistors - FETs, MOSFETs - Single 1 (Unlimited) 8-SOIC (0.154, 3.90mm Width) Surface Mount MOSFET (Metal Oxide) N-Channel Tube 11m Ω @ 7.3A, 10V 13A Ta -55°C~150°C TJ MOSFET N-CH 30V 13A 8-SOIC
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipat
***Yang
Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled
***emi
N-Channel PowerTrench® MOSFET, Logic Level, 30V, 12.5A, 9.5mΩ
***ure Electronics
N-Channel 30 V 9.5 mOhm Surface Mount Logic Level PowerTrench Mosfet -SOIC-8
***et Europe
Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC N T/R
***nell
MOSFET, N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 12.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0095ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation
***rchild Semiconductor
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***ure Electronics
Single P-Channel 30 V 11.9 mOhm 52 nC HEXFET® Power Mosfet - SOIC-8
***(Formerly Allied Electronics)
MOSFET, P-CHANNEL, -30V, -12A, 11.9 MOHM, 25VGS, SO-8
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ment14 APAC
MOSFET, P-CH, -30V, -12A, SOIC-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Source Voltage Vds:-30V; On Resistance
***ineon
Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
***nell
MOSFET, P-CH, -30V, -12A, SOIC-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -12A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.0085ohm; Rds(on) Test Voltage Vgs: -20V; Threshold Voltage Vgs: -1.8V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***Yang
Trans MOSFET N-CH 30V 11.6A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled
***ure Electronics
N-Channel 30 V 10 mO Surface Mount PowerTrench® Mosfet - SOIC-8
***emi
N-Channel PowerTrench® MOSFET 30V, 11.6A, 10mΩ
***et Europe
Trans MOSFET N-CH 30V 11.6A 8-Pin SOIC N T/R
***ment14 APAC
MOSFET, N CH, 30V, 11.6A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:11.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:11.6A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
***Yang
Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled
***emi
N-Channel Power Trench® MOSFET, Logic Level, 30V, 11A, 12.5mΩ
***ure Electronics
N-Channel 30 V 12.5 mO Surface Mount PowerTrench Mosfet - SOIC-8
***et Europe
Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R
***nell
MOSFET, N SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0125ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipation P
***rchild Semiconductor
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Teil # Mfg. Beschreibung Aktie Preis
DMN3016LSS-13
DISTI # V72:2272_06698171		Zetex / Diodes IncTrans MOSFET N-CH 30V 10.3A Automotive 8-Pin SO T/R
RoHS: Compliant		24
  • 10:$0.3834
  • 1:$0.4673
DMN3016LSS-13
DISTI # DMN3016LSS-13DICT-ND		Diodes IncorporatedMOSFET N-CH 30V 10.3A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2350In Stock
  • 1000:$0.2177
  • 500:$0.2817
  • 100:$0.3841
  • 10:$0.5120
  • 1:$0.6100
DMN3016LSS-13
DISTI # DMN3016LSS-13DIDKR-ND		Diodes IncorporatedMOSFET N-CH 30V 10.3A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2350In Stock
  • 1000:$0.2177
  • 500:$0.2817
  • 100:$0.3841
  • 10:$0.5120
  • 1:$0.6100
DMN3016LSS-13
DISTI # DMN3016LSS-13DITR-ND		Diodes IncorporatedMOSFET N-CH 30V 10.3A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 2500:$0.1927
DMN3016LSS-13
DISTI # C1S205700494584		Diodes IncorporatedTrans MOSFET N-CH 30V 10.3A Automotive 8-Pin SO T/R
RoHS: Compliant		24
  • 10:$0.3834
DMN3016LSS-13
DISTI # C1S205700551065		Diodes IncorporatedTrans MOSFET N-CH 30V 10.3A Automotive 8-Pin SO T/R
RoHS: Compliant		24
  • 2500:$0.2153
DMN3016LSS-13
DISTI # DMN3016LSS-13		Diodes IncorporatedTrans MOSFET N-CH 30V 10.3A 8-Pin SO T/R - Tape and Reel (Alt: DMN3016LSS-13)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.1399
  • 5000:$0.1329
  • 10000:$0.1269
  • 15000:$0.1209
  • 25000:$0.1179
DMN3016LSS-13
DISTI # 621-DMN3016LSS-13		Diodes IncorporatedMOSFET 30V N-Ch Enh FET 20Vdss 1.5W
RoHS: Compliant		4982
  • 1:$0.5000
  • 10:$0.4080
  • 100:$0.2490
  • 1000:$0.1930
  • 2500:$0.1640
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1987
Menge eingeben:
Der aktuelle Preis von DMN3016LSS-13 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,49 $
0,49 $
10
0,41 $
4,08 $
100
0,25 $
24,90 $
1000
0,19 $
193,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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