 |  | | |
| PartNumber | DMN3016LSS-13 | DMN3016LSS | DMN3016LSS-13-F |
| Description | MOSFET 30V N-Ch Enh FET 20Vdss 1.5W | ||
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 10.3 A | - | - |
| Rds On Drain Source Resistance | 8 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 25.1 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.5 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Series | DMN3016 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Diodes Incorporated | - | - |
| Forward Transconductance Min | - | - | - |
| Fall Time | 5.6 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 16.5 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 26.1 ns | - | - |
| Typical Turn On Delay Time | 4.8 ns | - | - |
| Unit Weight | 0.002610 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMN3016LSS-13 | MOSFET 30V N-Ch Enh FET 20Vdss 1.5W | |
| DMN3016LSS | Neu und Original | ||
| DMN3016LSS-13-F | Neu und Original | ||
| DMN3016LSS-13 | MOSFET 30V N-Ch Enh FET 20Vdss 1.5W |