STGB6NC60HT4

Mfr. #:: STGB6NC60HT4
Hersteller:: STMicroelectronics
Beschreibung:: IGBT Transistors PowerMESH TM IGBT
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: STGB6NC60HT4 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: STGB6NC60HT4 Datasheet STGB6NC60HT4 Datasheet (P4-P6)STGB6NC60HT4 Datasheet (P7-P9)STGB6NC60HT4 Datasheet (P10-P12)STGB6NC60HT4 Datasheet (P13-P14)
ECAD Model:
Mehr Informationen:: STGB6NC60HT4 Mehr Informationen STGB6NC60HT4 Product Details

Produkteigenschaft
Attributwert

Hersteller:: STMicroelectronics

Produktkategorie:: IGBT-Transistoren

RoHS:: Y

Technologie:: Si

Paket / Koffer:: D2PAK-3

Montageart:: SMD/SMT

Aufbau:: Single

Kollektor- Emitterspannung VCEO Max:: 600 V

Kollektor-Emitter-Sättigungsspannung:: 2.7 V

Maximale Gate-Emitter-Spannung:: 20 V

Pd - Verlustleistung:: 80 W

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Serie:: STGB6NC60H

Verpackung:: Spule

Kontinuierlicher Kollektorstrom Ic Max:: 15 A

Höhe:: 4.6 mm

Länge:: 10.4 mm

Breite:: 9.35 mm

Marke:: STMicroelectronics

Kontinuierlicher Kollektorstrom:: 12 A

Gate-Emitter-Leckstrom:: 100 nA

Produktart:: IGBT-Transistoren

Werkspackungsmenge:: 1000

Unterkategorie:: IGBTs

Gewichtseinheit:: 0.079014 oz

Tags: STGB6NC60H, STGB6N, STGB6, STGB, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGB6NC60HT4 Beschreibung

***roFlash: Trans IGBT Chip N-CH 600V 15A 3-Pin(2+Tab) D2PAK T/R

***ser: IGBTs Insulated Gate Bipolar Transistor PowerMESH TM IGBT

***r Electronics: Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel

*** Electronic Components: IGBT Transistors PowerMESH TM IGBT

***nell: IGBT, SMD, 600V, 7A, D2-PAK; Transistor Type:PowerMESH; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:15A; Voltage, Vce Sat Max:2.5V; Power Dissipation:56W; Case Style:D2-PAK; Termination Type:SMD; Current, Icm Pulsed:21A; No. of Pins:3; Time, Fall:76ns; Time, Rise:5ns

***ical: Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(2+Tab) D2PAK T/R

***icroelectronics: 14 A, 600 V short-circuit rugged IGBT

*** Source Electronics: IGBT 600V 25A 80W D2PAK / N-CHANNEL 14A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH IGBT

***icroelectronics SCT: Short-circuit rugged IGBT, D2PAK, Tape and Reel

***r Electronics: Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-263AB

***(Formerly Allied Electronics): IGBT, N-CHANNEL 600V 25A, D2PAK

*** Electronic Components: IGBT Transistors PowerMESH" IGBT

***nell: IGBT, SMD, 600V, 14A, D2-PAK; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: -; Transistor Case Style: TO-263; No. of Pins: 3Pins;

***roFlash: Trans IGBT Chip N-CH 600V 25A 3-Pin(2+Tab) D2PAK T/R

***r Electronics: Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel

***icroelectronics: New short circuit rugged "K" series

***nell: IGBT, SMD, 600V, 14A, D2-PAK; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: -; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Ic Continuous a Max: 25A; Fall Time tf: 75ns; Pulsed Current Icm: 50A; Rise Time: 8.5ns; Termination Type: Surface Mount Device; Transistor Polarity: N Channel; Transistor Type: Power IGBT; Voltage Vces: 600V

*** Source Electronics: Trans IGBT Chip N-CH 600V 20A 60000mW 3-Pin(2+Tab) D2PAK T/R / IGBT 600V 20A 65W D2PAK

***Parts: IGBTs - Single, Transistors N-Channel, D2PAK 20A 600V 65W Surface Mount

***nell: IGBT, SMD, 600V, 10A, D2-PAK; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 60W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Ic Continuous a Max: 20A; Fall Time tf: 82ns; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Max: 60W; Pulsed Current Icm: 30A; Rise Time: 6ns; Termination Type: Surface Mount Device; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 600V

***ical: Trans IGBT Chip N=-CH 600V 14A 83000mW 3-Pin(2+Tab) D2PAK T/R

***r Electronics: Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-263AB

***emi: IGBT, 600V, 7A, Short Circuit Rated

***el Electronic: IGBT Transistors 600V 7A NPT IGBT

***nell: FAST & ULTRAFAST RECOVERY RECTIFIERS;

***rchild Semiconductor: Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential.

***et: Trans IGBT Chip N-CH 600V 10A 3-Pin(2+Tab) D2PAK Rail

***rchild Semiconductor: Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential, such as sewing machine, CNC, motor control and home appliances.

***nell: IGBT, SINGLE, 600V, 10A, TO-263AB; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 1.9V; Power Dissipation Pd: 73.5W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***ical: Trans IGBT Chip N=-CH 600V 40A 208000mW 3-Pin(2+Tab) D2PAK T/R

***rchild Semiconductor: Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.

***nell: IGBT,N CH,600V,20A,D2PAK; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:208W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:208W

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
STGB6NC60HT4 DISTI # 497-5111-1-ND	STMicroelectronics	IGBT 600V 15A 56W D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1474In Stock	500:$1.1526 100:$1.4029 10:$1.7450 1:$1.9400
STGB6NC60HT4 DISTI # 497-5111-6-ND	STMicroelectronics	IGBT 600V 15A 56W D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1474In Stock	500:$1.1526 100:$1.4029 10:$1.7450 1:$1.9400
STGB6NC60HT4 DISTI # 497-5111-2-ND	STMicroelectronics	IGBT 600V 15A 56W D2PAK RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	1000In Stock	1000:$0.9272
STGB6NC60HT4 DISTI # STGB6NC60HT4	STMicroelectronics	Trans IGBT Chip N-CH 600V 15A 3-Pin(2+Tab) D2PAK T/R (Alt: STGB6NC60HT4) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0
STGB6NC60HT4 DISTI # 511-STGB6NC60HT4	STMicroelectronics	IGBT Transistors PowerMESH TM IGBT RoHS: Compliant	0

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: STGB6NC60HDT4 OMO.#: OMO-STGB6NC60HDT4	IGBT Transistors PowerMESH TM IGBT
	Mfr.#: STGB6NC60HD-1 OMO.#: OMO-STGB6NC60HD-1	IGBT Transistors N Ch 6A 600V
	Mfr.#: STGB6NC60HT4 OMO.#: OMO-STGB6NC60HT4	IGBT Transistors PowerMESH TM IGBT
	Mfr.#: STGB6NC60HDT4 OMO.#: OMO-STGB6NC60HDT4-STMICROELECTRONICS	IGBT 600V 15A 56W D2PAK
	Mfr.#: STGB6NC60 OMO.#: OMO-STGB6NC60-1190	Neu und Original
	Mfr.#: STGB6NC60HD OMO.#: OMO-STGB6NC60HD-1190	Neu und Original
	Mfr.#: STGB6NC60HD-1 OMO.#: OMO-STGB6NC60HD-1-STMICROELECTRONICS	IGBT 600V 15A 56W I2PAK
	Mfr.#: STGB6NC60HDT4,GB6NC60HD, OMO.#: OMO-STGB6NC60HDT4-GB6NC60HD--1190	Neu und Original
	Mfr.#: STGB6NC60HDT4,GB6NC60HD,6NC60,6N60 OMO.#: OMO-STGB6NC60HDT4-GB6NC60HD-6NC60-6N60-1190	Neu und Original
	Mfr.#: STGB6NC60HT4 OMO.#: OMO-STGB6NC60HT4-STMICROELECTRONICS	IGBT 600V 15A 56W D2PAK

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 2000
Menge eingeben:

Der aktuelle Preis von STGB6NC60HT4 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Beginnen mit

STGB6NC60H 7
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STGB6 9
STGB 130
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STGB6NC60HT4

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes