STGB6N

STGB6NC60HDT4 vs STGB6NC60HD-1 vs STGB6NC60HT4

 
PartNumberSTGB6NC60HDT4STGB6NC60HD-1STGB6NC60HT4
DescriptionIGBT Transistors PowerMESH TM IGBTIGBT Transistors N Ch 6A 600VIGBT Transistors PowerMESH TM IGBT
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryIGBT TransistorsIGBT TransistorsIGBT Transistors
RoHSYYY
TechnologySiSiSi
Package / CaseD2PAK-3I2PAK-3D2PAK-3
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max600 V600 V600 V
Collector Emitter Saturation Voltage2.7 V-2.7 V
Maximum Gate Emitter Voltage20 V20 V20 V
Pd Power Dissipation80 W-80 W
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesSTGB6NC60HDT4STGB6NC60HDSTGB6NC60H
PackagingReelTubeReel
Continuous Collector Current Ic Max15 A15 A15 A
Height4.6 mm9.35 mm4.6 mm
Length10.4 mm10.4 mm10.4 mm
Width9.35 mm4.6 mm9.35 mm
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Continuous Collector Current12 A-12 A
Gate Emitter Leakage Current100 nA-100 nA
Product TypeIGBT TransistorsIGBT TransistorsIGBT Transistors
Factory Pack Quantity100010001000
SubcategoryIGBTsIGBTsIGBTs
Unit Weight0.079014 oz0.084199 oz0.079014 oz
Hersteller Teil # Beschreibung RFQ
STMicroelectronics
STMicroelectronics
STGB6NC60HDT4 IGBT Transistors PowerMESH TM IGBT
STGB6NC60HD-1 IGBT Transistors N Ch 6A 600V
STGB6NC60HT4 IGBT Transistors PowerMESH TM IGBT
STGB6NC60HDT4 IGBT 600V 15A 56W D2PAK
STGB6NC60HD-1 IGBT 600V 15A 56W I2PAK
STGB6NC60HT4 IGBT 600V 15A 56W D2PAK
STGB6NC60 Neu und Original
STGB6NC60HD Neu und Original
STGB6NC60HDT4,GB6NC60HD, Neu und Original
STGB6NC60HDT4,GB6NC60HD,6NC60,6N60 Neu und Original
STGB6NC60HDT4,GB6NC60HD,6NC60,6N60, Neu und Original
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