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IXTR120P20T

IXTR120P20T
Mfr. #:
IXTR120P20T
Hersteller:
Littelfuse
Beschreibung:
MOSFET TrenchP Power MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXTR120P20T Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTR120P20T DatasheetIXTR120P20T Datasheet (P4-P6)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
200 V
Id - Kontinuierlicher Drainstrom:
90 A
Rds On - Drain-Source-Widerstand:
32 mOhms
Verpackung:
Rohr
Serie:
IXTR120P20
Marke:
IXYS
Produktart:
MOSFET
Werkspackungsmenge:
30
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.056438 oz
Tags
IXTR1, IXTR, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET P-CH 200V 90A ISOPLUS247
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.023Ohm;ID 94A;TO-247AC;PD 580W;VGS +/-30V
***itex
Transistor: N-MOSFET; unipolar; 200V; 94A; 0.023ohm; 580W; -55+175 deg.C; THT; TO247AC
***eco
Transistor MOSFET N Channel 200 Volt 94 Amp 3-Pin 3+ Tab TO-247AC
***trelec
MOSFET Operating temperature: -55...+175 °C Housing type: TO-247 Power dissipation: 580 W
***ure Electronics
Single N-Channel 200 V 0.023 Ohm 270 nC HEXFET® Power Mosfet - TO-247AC
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***ment14 APAC
MOSFET, N, 200V, 94A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:94A; Drain Source Voltage Vds:200V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:580W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:94A; Junction to Case Thermal Resistance A:0.26°C/W; On State resistance @ Vgs = 10V:23mohm; Package / Case:TO-247AC; Power Dissipation Pd:580W; Power Dissipation Pd:580W; Pulse Current Idm:380A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***trelec
MOSFET Operating temperature: -40...175 °C Housing type: TO-247 Power dissipation: 330 W
***ure Electronics
Single N-Channel 200 V 25 mOhm 70 nC HEXFET® Power Mosfet - TO-247AC
*** Source Electronics
Trans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-247AC Tube / MOSFET N-CH 200V 65A TO-247AC
*** Stop Electro
Power Field-Effect Transistor, 65A I(D), 200V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ment14 APAC
MOSFET, N, 200V, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:200V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:330W; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:46A; Cont Current Id @ 25°C:65A; Current Id Max:65A; Package / Case:TO-247; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:260A; Rth:0.45; Termination Type:Through Hole; Voltage Vds:200V; Voltage Vds Typ:240V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
***icroelectronics
N-channel 200 V, 0.019 Ω, 83 A, TO-247 low gate charge STripFET™2; Power MOSFET
***ical
Trans MOSFET N-CH 200V 83A 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Power Field-Effect Transistor, 83A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET, TO-247AD
*** Electronic Components
MOSFET N-channel 200V, 83A STripFET Mosfet
***el Electronic
CAP CER 0.068UF 630V X7R RADIAL
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.04Ohm;ID 50A;TO-247AC;PD 300W;VGS +/-20V
***itex
Transistor: N-MOSFET; unipolar; 200V; 50A; 0.04ohm; 300W; -55+175 deg.C; THT; TO247AC
***ure Electronics
Single N-Channel 200V 0.04 Ohm 234 nC HEXFET® Power Mosfet - TO-247AC
***fin
Transistor NPN Mos IRFP260/IRFP260N INTERNATIONAL RECTIFIER Ampere=50 V=200 TO247
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ment14 APAC
MOSFET, N, 200V, 49A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:200V; On Resistance Rds(on):40mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Junction to Case Thermal Resistance A:0.5°C/W; Package / Case:TO-247AC; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulse Current Idm:200A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
Teil # Mfg. Beschreibung Aktie Preis
IXTR120P20T
DISTI # IXTR120P20T-ND		IXYS CorporationMOSFET P-CH 200V 90A ISOPLUS247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$19.4990
IXTR120P20T
DISTI # 747-IXTR120P20T		IXYS CorporationMOSFET TrenchP Power MOSFET14
  • 1:$22.9400
  • 5:$21.7900
  • 10:$21.2200
  • 25:$19.5000
  • 50:$18.6700
  • 100:$18.1200
  • 250:$16.6300
  • 500:$15.8300
Bild Teil # Beschreibung
C2012X7R1H225K125AE

Mfr.#: C2012X7R1H225K125AE

OMO.#: OMO-C2012X7R1H225K125AE-TDK

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 2.2uF 50volts X7R 10% Soft Term
Verfügbarkeit
Aktie:
14
Auf Bestellung:
1997
Menge eingeben:
Der aktuelle Preis von IXTR120P20T dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
22,94 $
22,94 $
5
21,79 $
108,95 $
10
21,22 $
212,20 $
25
19,50 $
487,50 $
50
18,67 $
933,50 $
100
18,12 $
1 812,00 $
250
16,63 $
4 157,50 $
500
15,83 $
7 915,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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