PartNumber | IXTR102N65X2 | IXTR120P20T | IXTR140P10T |
Description | Discrete Semiconductor Modules DiscMSFT NChUltraJnctnX2Class ISOPLUS247 | MOSFET TrenchP Power MOSFET | MOSFET TrenchP Channel Power MOSFETs |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | Discrete Semiconductor Modules | MOSFET | MOSFET |
RoHS | Y | - | - |
Product | Power MOSFET Modules | - | - |
Type | X2-Class | - | - |
Vgs Gate Source Voltage | 30 V | - | - |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | ISOPLUS-247-3 | TO-247-3 | TO-247-3 |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Packaging | Tube | Tube | Tube |
Configuration | Single | - | - |
Brand | IXYS | IXYS | IXYS |
Transistor Polarity | N-Channel | P-Channel | P-Channel |
Fall Time | 11 ns | - | - |
Id Continuous Drain Current | 54 A | 90 A | 110 A |
Pd Power Dissipation | 330 W | - | - |
Product Type | Discrete Semiconductor Modules | MOSFET | MOSFET |
Rds On Drain Source Resistance | 33 mOhms | 32 mOhms | 11 mOhms |
Rise Time | 28 ns | - | - |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | Discrete Semiconductor Modules | MOSFETs | MOSFETs |
Tradename | PLUS247 | - | - |
Typical Turn Off Delay Time | 67 ns | - | - |
Typical Turn On Delay Time | 37 ns | - | - |
Vds Drain Source Breakdown Voltage | 650 V | 200 V | 100 V |
Vgs th Gate Source Threshold Voltage | 3 V | - | - |
Technology | - | Si | Si |
Series | - | IXTR120P20 | IXTR140P10 |
Unit Weight | - | 0.056438 oz | 0.056438 oz |