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STU2N105K5

STU2N105K5
Mfr. #:
STU2N105K5
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-channel 1050 V, 6 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in IPAK package
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STU2N105K5 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STU2N105K5 Mehr Informationen STU2N105K5 Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-251-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
1.05 kV
Id - Kontinuierlicher Drainstrom:
1.5 A
Rds On - Drain-Source-Widerstand:
8 Ohms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
10 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
60 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
MDmesh
Verpackung:
Rohr
Serie:
STU2N105K5
Marke:
STMicroelectronics
Abfallzeit:
38.5 ns
Produktart:
MOSFET
Anstiegszeit:
8.5 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
35 ns
Typische Einschaltverzögerungszeit:
14.5 ns
Gewichtseinheit:
0.139332 oz
Tags
STU2N, STU2, STU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 1050 V, 6 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in IPAK package
***r Electronics
Power Field-Effect Transistor, 1.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 1.05KV 1.5A 3-Pin(3+Tab) IPAK Tube
***ure Electronics
N-Channel 1050V 1.5A (Tc) 60W (Tc) Through Hole IPAK (TO-251)
***ronik
N-CH 1050V 1,5A 8000mOhm TO251
***icroelectronics SCT
Power MOSFETs, 1050V, 1.5A, IPAK, Tube
***el Electronic
IC AMP AUDIO PWR 3.1W MONO 8SON
***emi
Power MOSFET, N-Channel, QFET®, 900 V, 1.7 A, 7.2 Ω, IPAK
***r Electronics
Power Field-Effect Transistor, 1.7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ark
MOSFET, N-CH, 900V, 1.7A, IPAK; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
Power MOSFET, N-Channel, QFET®, 900 V, 1.7 A, 7.2 Ω, IPAK
***r Electronics
Power Field-Effect Transistor, 1.7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ark
MOSFET, N-CH, 900V, 1.7A, IPAK; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***i-Key
MOSFET N-CH 900V 1.7A IPAK
***Yang
MOSFET 900V N-Channel QFET - Bulk
***-Wing Technology
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***i-Key
MOSFET N-CH 800V 1.8A IPAK
***ser
MOSFETs 800V N-Channel QFET
***Yang
N-CH/800V/1.8A/6.3OHM - Bulk
***emi
Power MOSFET, N-Channel, QFET®, 1000 V, 1.6 A, 9 Ω, IPAK
***ure Electronics
FQU2N100 Series N-Channel 1000 V 9 Ohms Mosfet - TO-220
***nell
MOSFET, N-CH, 1KV, 1.6A, 150DEG C, 50W; Available until stocks are exhausted
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***icroelectronics
N-channel 1000 V, 6.25 Ohm typ., 1.85 A, Zener-protected SuperMESH Power MOSFET in IPAK package
***SIT Distribution GmbH
Power Field-Effect Transistor, 1.85A I(D), 1000V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N CH, 1000V, 1.85A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.85A; Drain Source Voltage Vds:1kV; On Resistance Rds(on):6.25ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:70W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +150°C
MDmesh K5 Power MOSFETs
STMicroelectronics MDmesh K5 series are very-high voltage MOSFETs with super-junction, industry's best RDS(on), and figure of merit for increased power density and efficiency. Typical applications include LED lighting, metering, solar inverters, 3-phase auxiliary power supplies and welding. The K5 series are available at 800V, 850V, 900V, 950V, 1050V, 1200V and 1500V.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Teil # Mfg. Beschreibung Aktie Preis
STU2N105K5
DISTI # 30608508		STMicroelectronicsTrans MOSFET N-CH 1.05KV 1.5A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		50
  • 50:$1.0557
  • 24:$1.0684
STU2N105K5
DISTI # 497-15282-5-ND		STMicroelectronicsMOSFET N-CH 1050V 1.5A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		Temporarily Out of Stock
    STU2N105K5
    DISTI # C1S730200997856    		STMicroelectronicsMOSFETs50
    • 50:$0.8280
    • 1:$0.8380
    STU2N105K5
    DISTI # STU2N105K5    		STMicroelectronicsTrans MOSFET N-CH 1050V 1.5A 3-Pin IPAK Tube (Alt: STU2N105K5)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 3000
    • 1:€1.5679
    • 10:€1.3289
    • 25:€1.3259
    • 50:€1.3229
    • 100:€1.0579
    • 500:€0.9319
    • 1000:€0.7689
    STU2N105K5
    DISTI # STU2N105K5    		STMicroelectronicsTrans MOSFET N-CH 1050V 1.5A 3-Pin IPAK Tube - Rail/Tube (Alt: STU2N105K5)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tube    		Americas - 0
    • 3000:$0.9289
    • 6000:$0.8849
    • 12000:$0.8449
    • 18000:$0.8079
    • 30000:$0.7909
    STU2N105K5
    DISTI # 511-STU2N105K5    		STMicroelectronicsMOSFET N-channel 1050 V, 6 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in IPAK package
    RoHS: Compliant    		0
    • 1:$1.8300
    • 10:$1.5500
    • 100:$1.2400
    • 500:$1.0900
    • 1000:$0.8990
    • 3000:$0.8380
    • 6000:$0.8070
    • 9000:$0.7750
    STU2N105K5
    DISTI # TMOSP12840    		STMicroelectronicsN-CH 1050V 1,5A 8000mOhm TO251Stock DE - 0Stock HK - 0Stock US - 0
    • 3000:$1.0492
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      STU2N105K5
      DISTI # XSKDRABV0028410      		STMicroelectronicsPower Field-Effect Transistor
      RoHS: Compliant      		2400 in Stock0 on Order
      • 2400:$1.1600
      • 600:$1.2400
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      		 TVS Diodes / ESD Suppressors Rep Volt Suppressor TVS 280V Ipp 2A
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      Mfr.#: STD2N105K5

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      Mfr.#: STU7N105K5

      OMO.#: OMO-STU7N105K5

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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1986
      Menge eingeben:
      Der aktuelle Preis von STU2N105K5 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,83 $
      1,83 $
      10
      1,55 $
      15,50 $
      100
      1,24 $
      124,00 $
      500
      1,09 $
      545,00 $
      1000
      0,90 $
      899,00 $
      3000
      0,84 $
      2 514,00 $
      6000
      0,81 $
      4 842,00 $
      9000
      0,78 $
      6 975,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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