PartNumber | STU2N80K5 | STU2N105K5 | STU2N62K3 |
Description | MOSFET N-channel 800 V, 3.5 Ohm typ., 2 A MDmesh K5 Power MOSFET in IPAK package | MOSFET N-channel 1050 V, 6 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in IPAK package | MOSFET N-Ch 620V 3 Ohm 2.2A SuperMESH |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-251-3 | TO-251-3 | TO-251-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 800 V | 1.05 kV | 620 V |
Id Continuous Drain Current | 2 A | 1.5 A | 2.2 A |
Rds On Drain Source Resistance | 4.5 Ohms | 8 Ohms | 3.6 Ohms |
Vgs th Gate Source Threshold Voltage | 4 V | 3 V | - |
Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
Qg Gate Charge | 9.5 nC | 10 nC | 15 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 45 W | 60 W | 45 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | - |
Tradename | MDmesh | MDmesh | MDmesh |
Packaging | Tube | Tube | Tube |
Series | STU2N80K5 | STU2N105K5 | STU2N62K3 |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Fall Time | 32 ns | 38.5 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 12 ns | 8.5 ns | - |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 19 ns | 35 ns | - |
Typical Turn On Delay Time | 8 ns | 14.5 ns | - |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |