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IHW20N120R3FKSA1

IHW20N120R3FKSA1
Mfr. #:
IHW20N120R3FKSA1
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IHW20N120R3FKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-247-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
1200 V
Kollektor-Emitter-Sättigungsspannung:
1.48 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
40 A
Pd - Verlustleistung:
310 W
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
RC
Verpackung:
Rohr
Marke:
Infineon-Technologien
Gate-Emitter-Leckstrom:
100 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
240
Unterkategorie:
IGBTs
Handelsname:
TRENCHSTOP
Teil # Aliase:
IHW20N120R3 IHW2N12R3XK SP000437702
Gewichtseinheit:
0.191185 oz
Tags
IHW20N120R3, IHW20N120R, IHW20N12, IHW20N1, IHW20N, IHW20, IHW2, IHW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
IHW20N120R3FKSA1
DISTI # V99:2348_06378638		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 40A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		206
  • 500:$2.4380
  • 250:$2.7420
  • 100:$2.9050
  • 10:$3.3780
  • 1:$4.4165
IHW20N120R3FKSA1
DISTI # V36:1790_06378638		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 40A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
  • 240000:$1.7750
  • 120000:$1.7770
  • 24000:$1.9540
  • 2400:$2.2510
  • 240:$2.3000
IHW20N120R3FKSA1
DISTI # IHW20N120R3FKSA1-ND		Infineon Technologies AGIGBT 1200V 40A 310W TO247-3
RoHS: Compliant
Min Qty: 240
Container: Tube		Limited Supply - Call
  • 240:$3.1198
IHW20N120R3FKSA1
DISTI # 31949322		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 40A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		206
  • 3:$4.4165
IHW20N120R3FKSA1
DISTI # 33919344		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 40A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		168
  • 6:$1.9624
IHW20N120R3FKSA1
DISTI # IHW20N120R3FKSA1		Infineon Technologies AG- Bulk (Alt: IHW20N120R3FKSA1)
RoHS: Compliant
Min Qty: 191
Container: Bulk		Americas - 0
  • 955:$1.5900
  • 1910:$1.5900
  • 573:$1.6900
  • 191:$1.7900
  • 382:$1.7900
IHW20N120R3XK
DISTI # IHW20N120R3FKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 40A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IHW20N120R3FKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 1440:$1.8900
  • 2400:$1.8900
  • 960:$1.9900
  • 240:$2.0900
  • 480:$2.0900
IHW20N120R3FKSA1
DISTI # 13T9429		Infineon Technologies AGIGBT+ DIODE, 1.2KV, 40A, TO-247,DC Collector Current:40A,Collector Emitter Saturation Voltage Vce(on):1.48V,Power Dissipation Pd:310W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:175°C RoHS Compliant: Yes0
  • 500:$2.5600
  • 250:$2.8500
  • 100:$3.0000
  • 50:$3.1500
  • 25:$3.3000
  • 10:$3.4500
  • 1:$4.0700
IHW20N120R3
DISTI # 726-IHW20N120R3		Infineon Technologies AGIGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body
RoHS: Compliant		161
  • 1:$4.0300
  • 10:$3.4200
  • 100:$2.9700
  • 250:$2.8200
  • 500:$2.5300
IHW20N120R3FKSA1
DISTI # 726-IHW20N120R3FKSA1		Infineon Technologies AGIGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body
RoHS: Compliant		192
  • 1:$4.0300
  • 10:$3.4200
  • 100:$2.9700
  • 250:$2.8200
  • 500:$2.5300
IHW20N120R3FKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-247
RoHS: Compliant		480
  • 1000:$1.7200
  • 500:$1.8100
  • 100:$1.8900
  • 25:$1.9700
  • 1:$2.1200
IHW20N120R3FKSA1
DISTI # 1107751P		Infineon Technologies AGIGBT TRENCHSTOP NCHANNEL 1200V 20A TO247, TU2
  • 500:£1.8180
  • 200:£1.8800
  • 100:£1.9700
  • 20:£2.3100
IHW20N120R3FKSA1
DISTI # 1107751		Infineon Technologies AGIGBT TRENCHSTOP NCHANNEL 1200V 20A TO247, PK20
  • 500:£1.8180
  • 200:£1.8800
  • 100:£1.9700
  • 20:£2.3100
  • 4:£2.8900
IHW20N120R3FKSA1
DISTI # 1832349		Infineon Technologies AGIGBT+ DIODE,1200V,20A,TO247
RoHS: Compliant		627
  • 500:$3.8100
  • 250:$4.2500
  • 100:$4.4800
  • 10:$5.1500
  • 1:$6.0700
IHW20N120R3FKSA1
DISTI # 1832349		Infineon Technologies AGIGBT+ DIODE,1200V,20A,TO247
RoHS: Compliant		813
  • 500:£1.9300
  • 250:£2.1500
  • 100:£2.2600
  • 10:£2.6100
  • 1:£3.4500
IHW20N120R3FKSA1
DISTI # XSKDRABV0051922		Infineon Technologies AG 
RoHS: Compliant		4080 in Stock0 on Order
  • 4080:$2.5200
  • 240:$2.7000
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IRF100B201

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IS42S32800J-6TL

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IRLML6402TRPBF

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TMP100AQDBVRQ1

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 Res Thick Film 0603 2.4K Ohm 1% 0.1W(1/10W) ±100ppm/C Molded SMD Paper T/R
Verfügbarkeit
Aktie:
192
Auf Bestellung:
2175
Menge eingeben:
Der aktuelle Preis von IHW20N120R3FKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
4,03 $
4,03 $
10
3,42 $
34,20 $
100
2,97 $
297,00 $
250
2,82 $
705,00 $
500
2,53 $
1 265,00 $
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