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IPB073N15N5ATMA1

IPB073N15N5ATMA1
Mfr. #:
IPB073N15N5ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB073N15N5ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPB073N15N5ATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
150 V
Id - Kontinuierlicher Drainstrom:
114 A
Rds On - Drain-Source-Widerstand:
5.6 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
61 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
214 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Serie:
OptiMOS 5
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
46 S
Abfallzeit:
4 ns
Produktart:
MOSFET
Anstiegszeit:
4 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
20 ns
Typische Einschaltverzögerungszeit:
14 ns
Teil # Aliase:
IPB073N15N5 SP001180660
Gewichtseinheit:
0.077603 oz
Tags
IPB07, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 150V 114A 3-Pin(2+Tab) D2PAK T/R
***ineon SCT
OptiMOS™ 5 150V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications, PG-TO263-3, RoHS
***ark
Mosfet, N-Ch, 150V, 114A, 175Deg C, 214W; Transistor Polarity:n Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:114A; On Resistance Rds(On):0.0056Ohm; Transistor Mounting:surface Mount; Threshold Voltage Vgs:3.8V Rohs Compliant: Yes
***ineon
The new OptiMOS 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness. | Summary of Features: Lower R DS(on) without compromising FOM gd and FOM oss; Lower output charge; Ultra-low reverse recovery charge; Increased commutation ruggedness; Higher switching frequency possible | Benefits: Reduced paralleling; Size reduction enabled with SuperSO8 best-in-class; Higher power density designs; More rugged products; System cost reduction; Improved EMI behavior | Target Applications: Low voltage drives; Telecom; Solar
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Teil # Mfg. Beschreibung Aktie Preis
IPB073N15N5ATMA1
DISTI # V36:1790_16140317		Infineon Technologies AGTrans MOSFET N-CH 150V 114A 3-Pin(2+Tab) D2PAK T/R0
  • 1000000:$1.8680
  • 500000:$1.8700
  • 100000:$2.0360
  • 10000:$2.3120
  • 1000:$2.3570
IPB073N15N5ATMA1
DISTI # V72:2272_16140317		Infineon Technologies AGTrans MOSFET N-CH 150V 114A 3-Pin(2+Tab) D2PAK T/R0
    IPB073N15N5ATMA1
    DISTI # IPB073N15N5ATMA1TR-ND    		Infineon Technologies AGMV POWER MOS
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		On Order
    • 2000:$2.2391
    • 1000:$2.3570
    IPB073N15N5ATMA1
    DISTI # IPB073N15N5ATMA1CT-ND    		Infineon Technologies AGMV POWER MOS
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Temporarily Out of Stock
    • 500:$2.8786
    • 100:$3.3814
    • 10:$4.1270
    • 1:$4.6000
    IPB073N15N5ATMA1
    DISTI # IPB073N15N5ATMA1DKR-ND    		Infineon Technologies AGMV POWER MOS
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Temporarily Out of Stock
    • 500:$2.8786
    • 100:$3.3814
    • 10:$4.1270
    • 1:$4.6000
    IPB073N15N5ATMA1
    DISTI # IPB073N15N5ATMA1    		Infineon Technologies AGTrans MOSFET N 150V 114A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB073N15N5ATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 6000:$1.9900
    • 10000:$1.9900
    • 4000:$2.0900
    • 2000:$2.1900
    • 1000:$2.2900
    IPB073N15N5ATMA1
    DISTI # SP001180660    		Infineon Technologies AGTrans MOSFET N 150V 114A 3-Pin TO-263 T/R (Alt: SP001180660)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel    		Europe - 0
    • 10000:€1.6900
    • 6000:€1.7900
    • 2000:€1.9900
    • 4000:€1.9900
    • 1000:€2.0900
    IPB073N15N5ATMA1
    DISTI # 43AC3264    		Infineon Technologies AGMOSFET, N-CH, 150V, 114A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:114A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.0056ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.8V,Power RoHS Compliant: Yes809
    • 500:$2.6900
    • 250:$2.9900
    • 100:$3.1500
    • 50:$3.3100
    • 25:$3.4700
    • 10:$3.6400
    • 1:$4.2800
    IPB073N15N5ATMA1
    DISTI # 726-IPB073N15N5ATMA1    		Infineon Technologies AGMOSFET
    RoHS: Compliant    		0
    • 1:$4.2400
    • 10:$3.6000
    • 100:$3.1200
    • 250:$2.9600
    • 500:$2.6600
    • 1000:$2.2400
    • 2000:$2.1300
    IPB073N15N5ATMA1
    DISTI # IPB073N15N5    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,150V,81A,214W,PG-TO263-31013
    • 100:$2.6800
    • 25:$2.8700
    • 5:$3.2000
    • 1:$3.6200
    IPB073N15N5ATMA1
    DISTI # 2803388    		Infineon Technologies AGMOSFET, N-CH, 150V, 114A, TO-263-3300
    • 100:£2.8300
    • 10:£3.2600
    • 1:£4.2900
    IPB073N15N5ATMA1
    DISTI # 2803388    		Infineon Technologies AGMOSFET, N-CH, 150V, 114A, TO-263-3
    RoHS: Compliant    		299
    • 1000:$3.1500
    • 500:$3.2100
    • 250:$3.3800
    • 100:$3.5800
    • 10:$4.0500
    • 1:$4.3300
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    		 MOSFET N-CH 150V 120A TO263-3
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1500
    Menge eingeben:
    Der aktuelle Preis von IPB073N15N5ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    4,24 $
    4,24 $
    10
    3,60 $
    36,00 $
    100
    3,12 $
    312,00 $
    250
    2,96 $
    740,00 $
    500
    2,66 $
    1 330,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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