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IPB048N15N5ATMA1

IPB048N15N5ATMA1
Mfr. #:
IPB048N15N5ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 150V 120A TO263-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB048N15N5ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPB048N15N5ATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
INFINEO
Produktkategorie
IC-Chips
Serie
SNAPAK
Teilestatus
Aktiv
Unterbrechertyp
Magnetisch (hydraulische Verzögerung)
Aktuelle Bewertung
10A
Nennspannung - AC
125V
Nennspannung - DC
32V
Anzahl der Stangen
1
Betätigertyp
Rocker
Erleuchtung
-
Beleuchtungsspannung (Nominal)
-
Befestigungsart
Plattenmontage
Tags
IPB048N1, IPB048, IPB04, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 150 V 4.8 mOhm 80 nC OptiMOS™ Power Mosfet - D2PAK
***ark
Mosfet, N-Ch, 150V, 120A, To-263-3; Transistor Polarity:n Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:150V; On Resistance Rds(On):0.0037Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.8V; Power Rohs Compliant: Yes
***ineon
The new OptiMOS 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness. | Summary of Features: Lower R DS(on) without compromising FOM gd and FOM oss; Lower output charge; Ultra-low reverse recovery charge; Increased commutation ruggedness; Higher switching frequency possible | Benefits: Reduced paralleling; Size reduction enabled with SuperSO8 best-in-class; Higher power density designs; More rugged products; System cost reduction; Improved EMI behavior | Target Applications: Low voltage drives; Telecom; Solar
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Light Electric Vehicles (LEV)
Infineon Light Electric Vehicles have world-changing potential utilizing the emission-free solution for rising megacities. LEV's apply new technology enabling greater power efficiency, smaller size, lighter weight, and lower cost solutions. LEVs cost less when compared to gasoline or battery powered EVs, making them affordable and hence attractive to emerging markets, where a transition to electrified mobility is in progress.
Teil # Mfg. Beschreibung Aktie Preis
IPB048N15N5ATMA1
DISTI # V72:2272_16140316		Infineon Technologies AGTrans MOSFET N-CH 150V 120A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
    IPB048N15N5ATMA1
    DISTI # V36:1790_16140316    		Infineon Technologies AGTrans MOSFET N-CH 150V 120A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		0
    • 1000000:$3.0670
    • 500000:$3.0700
    • 100000:$3.2450
    • 10000:$3.5390
    • 1000:$3.5870
    IPB048N15N5ATMA1
    DISTI # IPB048N15N5ATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 150V 120A TO263-3
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		On Order
    • 2000:$3.4544
    • 1000:$3.5873
    IPB048N15N5ATMA1
    DISTI # IPB048N15N5ATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 150V 120A TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Temporarily Out of Stock
    • 500:$4.2423
    • 100:$4.8718
    • 10:$5.8840
    • 1:$6.5100
    IPB048N15N5ATMA1
    DISTI # IPB048N15N5ATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 150V 120A TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Temporarily Out of Stock
    • 500:$4.2423
    • 100:$4.8718
    • 10:$5.8840
    • 1:$6.5100
    IPB048N15N5ATMA1
    DISTI # SP001279596    		Infineon Technologies AGTrans MOSFET N 150V 120A 3-Pin TO-263 T/R (Alt: SP001279596)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel    		Europe - 0
    • 10000:€2.6900
    • 6000:€2.8900
    • 4000:€3.0900
    • 2000:€3.2900
    • 1000:€3.3900
    IPB048N15N5ATMA1
    DISTI # IPB048N15N5    		Infineon Technologies AGTrans MOSFET N 150V 120A 3-Pin TO-263 T/R (Alt: IPB048N15N5)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel    		Asia - 0
    • 50000:$3.2034
    • 25000:$3.2445
    • 10000:$3.2866
    • 5000:$3.3299
    • 3000:$3.4199
    • 2000:$3.5149
    • 1000:$3.6153
    IPB048N15N5ATMA1
    DISTI # 43AC3263    		Infineon Technologies AGMOSFET, N-CH, 150V, 120A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.0037ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.8V,Power RoHS Compliant: Yes187
    • 500:$3.9600
    • 250:$4.3400
    • 100:$4.5500
    • 50:$4.8900
    • 25:$5.2300
    • 10:$5.4900
    • 1:$6.0800
    IPB048N15N5ATMA1
    DISTI # 726-IPB048N15N5ATMA1    		Infineon Technologies AGMOSFET
    RoHS: Compliant    		0
    • 1:$6.0200
    • 10:$5.4400
    • 25:$5.1800
    • 100:$4.5000
    • 250:$4.3000
    • 500:$3.9200
    • 1000:$3.4100
    • 2000:$3.2900
    IPB048N15N5ATMA1
    DISTI # 2803387    		Infineon Technologies AGMOSFET, N-CH, 150V, 120A, TO-263-311
    • 100:£4.0400
    • 10:£4.6500
    • 1:£5.9800
    IPB048N15N5ATMA1
    DISTI # 2803387    		Infineon Technologies AGMOSFET, N-CH, 150V, 120A, TO-263-3
    RoHS: Compliant    		2056
    • 100:$7.3500
    • 10:$8.8700
    • 1:$9.8100
    Bild Teil # Beschreibung
    IPB048N15N5ATMA1

    Mfr.#: IPB048N15N5ATMA1

    OMO.#: OMO-IPB048N15N5ATMA1

    		 MOSFET
    IPB048N15N5LFATMA1

    Mfr.#: IPB048N15N5LFATMA1

    OMO.#: OMO-IPB048N15N5LFATMA1

    		 MOSFET
    IPB048N15N5LFATMA1

    Mfr.#: IPB048N15N5LFATMA1

    OMO.#: OMO-IPB048N15N5LFATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 150V 120A TO263-3
    IPB048N15N5ATMA1-CUT TAPE

    Mfr.#: IPB048N15N5ATMA1-CUT TAPE

    OMO.#: OMO-IPB048N15N5ATMA1-CUT-TAPE-1190

    		 Neu und Original
    IPB048N15N5ATMA1

    Mfr.#: IPB048N15N5ATMA1

    OMO.#: OMO-IPB048N15N5ATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 150V 120A TO263-3
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3500
    Menge eingeben:
    Der aktuelle Preis von IPB048N15N5ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    4,81 $
    4,81 $
    10
    4,56 $
    45,65 $
    100
    4,32 $
    432,46 $
    500
    4,08 $
    2 042,20 $
    1000
    3,84 $
    3 844,10 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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