PartNumber | IPB042N03L G | IPB0401NM5SATMA1 | IPB041N04NGATMA1 |
Description | MOSFET N-Ch 30V 70A D2PAK-2 OptiMOS 3 | MOSFET | MOSFET N-CH 40V 80A TO263-3 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TO-263-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 70 A | - | - |
Rds On Drain Source Resistance | 4.2 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2.2 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 18 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 79 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | OptiMOS | - | - |
Packaging | Reel | Reel | - |
Height | 4.4 mm | - | - |
Length | 10 mm | - | - |
Series | OptiMOS 3 | - | - |
Transistor Type | 1 N-Channel | - | - |
Width | 9.25 mm | - | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 87 S | - | - |
Fall Time | 4.4 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 5.6 ns | - | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 28 ns | - | - |
Typical Turn On Delay Time | 7.4 ns | - | - |
Part # Aliases | IPB042N03LGATMA1 IPB42N3LGXT SP000304124 | IPB0401NM5S SP004565816 | - |
Unit Weight | 0.139332 oz | - | - |
Hersteller | Teil # | Beschreibung | RFQ |
---|---|---|---|
Infineon Technologies |
IPB044N15N5ATMA1 | MOSFET | |
IPB042N10N3GATMA1 | MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3 | ||
IPB042N10N3 G | MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3 | ||
IPB049NE7N3 G | MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS 3 | ||
IPB049NE7N3GATMA1 | MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS 3 | ||
IPB042N03L G | MOSFET N-Ch 30V 70A D2PAK-2 OptiMOS 3 | ||
IPB049N08N5ATMA1 | MOSFET N-Ch 80V 80A D2PAK-2 | ||
IPB048N15N5ATMA1 | MOSFET | ||
IPB048N15N5LFATMA1 | MOSFET | ||
IPB042N10N3GE818XT | MOSFET N-Ch 100V 100A D2PAK-2 | ||
IPB042N10N3 G E8187 | MOSFET N-Ch 100V 100A D2PAK-2 | ||
IPB0401NM5SATMA1 | MOSFET | ||
IPB049NE7N3GATMA1 | MOSFET N-CH 75V 80A TO263-3 | ||
IPB044N15N5ATMA1 | MOSFET N-CH 150V 174A TO263-7 | ||
IPB048N15N5LFATMA1 | MOSFET N-CH 150V 120A TO263-3 | ||
IPB041N04NGATMA1 | MOSFET N-CH 40V 80A TO263-3 | ||
IPB042N03LGATMA1 | MOSFET N-CH 30V 70A TO-263-3 | ||
IPB042N10N3GATMA1 | MOSFET N-CH 100V 100A TO263-3 | ||
IPB042N10N3GE8187ATMA1 | MOSFET N-CH 100V 100A TO263-3 | ||
IPB048N06LGATMA1 | MOSFET N-CH 60V 100A TO-263 | ||
IPB048N15N5ATMA1 | MOSFET N-CH 150V 120A TO263-3 | ||
IPB049N06L3GATMA1 | MOSFET N-CH 60V 80A TO263-3 | ||
IPB049N08N5ATMA1 | MOSFET N-CH 80V TO263-3 | ||
Infineon Technologies |
IPB042N03LGATMA1 | MOSFET LV POWER MOS | |
IPB042N03LG | Neu und Original | ||
IPB042N10N3GATMA1-CUT TAPE | Neu und Original | ||
IPB048N15N5ATMA1-CUT TAPE | Neu und Original | ||
IPB041N04N G | MOSFET N-Ch 40V 80A D2PAK-2 | ||
IPB041N04NG | Neu und Original | ||
IPB042N10N | Neu und Original | ||
IPB042N10N3 | Neu und Original | ||
IPB042N10N3 G | Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263 | ||
IPB042N10N3G | 100V,100A,N Channel Power MOSFET | ||
IPB042N10N3G , 2SD1898-H | Neu und Original | ||
IPB042N10N3GATMA1 , 2SD1 | Neu und Original | ||
IPB042N10N3GATMA1INFINEO | Neu und Original | ||
IPB042N10N3GS | Neu und Original | ||
IPB048N06LG | Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) TO-263 - Bulk (Alt: IPB048N06LG) | ||
IPB048N06LGXT | Neu und Original | ||
IPB049N06L3 | Neu und Original | ||
IPB049N06L3G | Power Field-Effect Transistor, 80A I(D), 60V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
IPB049N10N | Neu und Original | ||
IPB049NE7N3 | Neu und Original | ||
IPB049NE7N3G | 75V,80A,N Channel Power MOSFET | ||
IPB04CN10N G | MOSFET N-Ch 100V 100A D2PAK-2 | ||
IPB04CN10NG | Neu und Original | ||
IPB04N03L | Neu und Original | ||
IPB049NE7N3 G | Darlington Transistors MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS 3 | ||
IPB049N06L3 G | IGBT Transistors MOSFET N-Ch 60V 80A D2PAK-2 | ||
IPB042N10N3GE818XT | RF Bipolar Transistors MOSFET N-Ch 100V 100A D2PAK-2 |