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IPB049NE7N3 G

IPB049NE7N3 G
Mfr. #:
IPB049NE7N3 G
Hersteller:
Infineon Technologies
Beschreibung:
Darlington Transistors MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB049NE7N3 G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPB049NE7N3 G Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
OptiMOS 3
Verpackung
Spule
Teil-Aliasnamen
IPB049NE7N3GATMA1 IPB049NE7N3GXT SP000641752
Gewichtseinheit
0.139332 oz
Montageart
SMD/SMT
Handelsname
OptiMOS
Paket-Koffer
TO-252-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
150 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
8 ns
Anstiegszeit
11 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
80 A
Vds-Drain-Source-Breakdown-Voltage
75 V
Rds-On-Drain-Source-Widerstand
4.9 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
30 nS
Qg-Gate-Ladung
51 nC
Tags
IPB049NE7N3G, IPB049NE, IPB049, IPB04, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IPB049NE7N3GATMA1
DISTI # V72:2272_06383352		Infineon Technologies AGTrans MOSFET N-CH 75V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		988
  • 500:$1.2088
  • 250:$1.4094
  • 100:$1.4127
  • 25:$1.6860
  • 10:$1.6916
  • 1:$1.9176
IPB049NE7N3GATMA1
DISTI # IPB049NE7N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 75V 80A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2518In Stock
  • 500:$1.5491
  • 100:$1.9917
  • 10:$2.4790
  • 1:$2.7400
IPB049NE7N3GATMA1
DISTI # IPB049NE7N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 75V 80A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2518In Stock
  • 500:$1.5491
  • 100:$1.9917
  • 10:$2.4790
  • 1:$2.7400
IPB049NE7N3GATMA1
DISTI # IPB049NE7N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 75V 80A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		1000In Stock
  • 1000:$1.2462
IPB049NE7N3GATMA1
DISTI # 30703021		Infineon Technologies AGTrans MOSFET N-CH 75V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$1.2507
IPB049NE7N3GATMA1
DISTI # 26195165		Infineon Technologies AGTrans MOSFET N-CH 75V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		988
  • 500:$1.2088
  • 250:$1.4094
  • 100:$1.4127
  • 25:$1.6860
  • 10:$1.6916
  • 7:$1.9176
IPB049NE7N3 G
DISTI # IPB049NE7N3 G		Infineon Technologies AGTrans MOSFET N-CH 75V 80A 3-Pin TO-263 T/R (Alt: IPB049NE7N3 G)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Asia - 0
    IPB049NE7N3GATMA1
    DISTI # IPB049NE7N3GATMA1    		Infineon Technologies AGTrans MOSFET N-CH 75V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB049NE7N3GATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 1000:$1.1249
    • 2000:$1.0849
    • 4000:$1.0449
    • 6000:$1.0099
    • 10000:$0.9919
    IPB049NE7N3GATMA1
    DISTI # SP000641752    		Infineon Technologies AGTrans MOSFET N-CH 75V 80A 3-Pin(2+Tab) TO-263 (Alt: SP000641752)
    RoHS: Compliant
    Min Qty: 1000    		Europe - 0
    • 1000:€1.4159
    • 2000:€1.1008
    • 4000:€1.0209
    • 6000:€0.9889
    • 10000:€0.9509
    IPB049NE7N3GATMA1Infineon Technologies AG 
    RoHS: Not Compliant    		1000
    • 1000:$0.9500
    • 500:$1.0000
    • 100:$1.0400
    • 25:$1.0800
    • 1:$1.1700
    IPB049NE7N3 G
    DISTI # 726-IPB049NE7N3G    		Infineon Technologies AGMOSFET N-Ch 75V 80A D2PAK-2 OptiMOS 3
    RoHS: Compliant    		984
    • 1:$2.3000
    • 10:$1.9600
    • 100:$1.5700
    • 500:$1.3700
    • 1000:$1.1400
    IPB049NE7N3GATMA1
    DISTI # 726-IPB049NE7N3GATMA    		Infineon Technologies AGMOSFET N-Ch 75V 80A D2PAK-2 OptiMOS 3
    RoHS: Compliant    		1269
    • 1:$2.3000
    • 10:$1.9600
    • 100:$1.5700
    • 500:$1.3700
    • 1000:$1.1400
    IPB049NE7N3GATMA1
    DISTI # 8977447P    		Infineon Technologies AGMOSFET N-CHANNEL 75V 80A OPTIMOS TO263, RL475
    • 50:£1.3520
    • 100:£1.0780
    IPB049NE7N3GInfineon Technologies AGINSTOCK486
      IPB049NE7N3GInfineon Technologies AG75V,80A,N Channel Power MOSFET436
      • 1:$1.7200
      • 100:$1.4400
      • 500:$1.2700
      • 1000:$1.2300
      IPB049NE7N3GATMA1
      DISTI # 2480799      		Infineon Technologies AGMOSFET, N-CH, 75V, 80A, TO-263-3
      RoHS: Compliant      		125
      • 1:$3.6500
      • 10:$3.1000
      • 100:$2.4900
      • 500:$2.1700
      • 1000:$1.8100
      IPB049NE7N3GATMA1
      DISTI # 2480799RL      		Infineon Technologies AGMOSFET, N-CH, 75V, 80A, TO-263-3
      RoHS: Compliant      		0
      • 1:$3.6500
      • 10:$3.1000
      • 100:$2.4900
      • 500:$2.1700
      • 1000:$1.8100
      IPB049NE7N3GATMA1
      DISTI # C1S322000218176      		Infineon Technologies AGTrans MOSFET N-CH 75V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
      RoHS: Compliant      		1000
      • 1000:$1.2500
      IPB049NE7N3GATMA1
      DISTI # C1S322000676088      		Infineon Technologies AGMOSFETs
      RoHS: Compliant      		988
      • 250:$1.4094
      • 100:$1.4127
      • 25:$1.6860
      • 10:$1.6916
      IPB049NE7N3GATMA1
      DISTI # 2480799      		Infineon Technologies AGMOSFET, N-CH, 75V, 80A, TO-263-3
      RoHS: Compliant      		125
      • 1:£1.3900
      • 10:£1.1900
      • 100:£0.9490
      • 250:£0.8870
      • 500:£0.8230
      Bild Teil # Beschreibung
      IPB049NE7N3 G

      Mfr.#: IPB049NE7N3 G

      OMO.#: OMO-IPB049NE7N3-G

      		 MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS 3
      IPB049NE7N3GATMA1

      Mfr.#: IPB049NE7N3GATMA1

      OMO.#: OMO-IPB049NE7N3GATMA1

      		 MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS 3
      IPB049NE7N3GATMA1

      Mfr.#: IPB049NE7N3GATMA1

      OMO.#: OMO-IPB049NE7N3GATMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 75V 80A TO263-3
      IPB049N06L3

      Mfr.#: IPB049N06L3

      OMO.#: OMO-IPB049N06L3-1190

      		 Neu und Original
      IPB049N06L3G

      Mfr.#: IPB049N06L3G

      OMO.#: OMO-IPB049N06L3G-1190

      		 Power Field-Effect Transistor, 80A I(D), 60V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      IPB049N10N

      Mfr.#: IPB049N10N

      OMO.#: OMO-IPB049N10N-1190

      		 Neu und Original
      IPB049NE7N3G

      Mfr.#: IPB049NE7N3G

      OMO.#: OMO-IPB049NE7N3G-1190

      		 75V,80A,N Channel Power MOSFET
      IPB049NE7N3 G

      Mfr.#: IPB049NE7N3 G

      OMO.#: OMO-IPB049NE7N3-G-124

      		 Darlington Transistors MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS 3
      IPB049N06L3 G

      Mfr.#: IPB049N06L3 G

      OMO.#: OMO-IPB049N06L3-G-126

      		 IGBT Transistors MOSFET N-Ch 60V 80A D2PAK-2
      IPB049N08N5ATMA1

      Mfr.#: IPB049N08N5ATMA1

      OMO.#: OMO-IPB049N08N5ATMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 80V TO263-3
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      3000
      Menge eingeben:
      Der aktuelle Preis von IPB049NE7N3 G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,52 $
      1,52 $
      10
      1,44 $
      14,39 $
      100
      1,36 $
      136,35 $
      500
      1,29 $
      643,90 $
      1000
      1,21 $
      1 212,00 $
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