IPB049N08N5ATMA1

IPB049N08N5ATMA1
Mfr. #:
IPB049N08N5ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 80V 80A D2PAK-2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB049N08N5ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPB049N08N5ATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
80 V
Id - Kontinuierlicher Drainstrom:
80 A
Rds On - Drain-Source-Widerstand:
6.6 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
42 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
125 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Serie:
OptiMOS 5
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
52 S
Abfallzeit:
7 ns
Produktart:
MOSFET
Anstiegszeit:
7 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
27 ns
Typische Einschaltverzögerungszeit:
17 ns
Teil # Aliase:
IPB049N08N5 SP001227052
Gewichtseinheit:
0.139332 oz
Tags
IPB049N0, IPB049, IPB04, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***ark
Mosfet, N-Ch, 80V, 80A, To-263-3; Transistor Polarity:n Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.0043Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IPB049N08N5ATMA1
DISTI # V72:2272_06383300
Infineon Technologies AGTrans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
334
  • 75000:$0.9624
  • 30000:$0.9724
  • 15000:$0.9824
  • 6000:$0.9924
  • 3000:$1.0026
  • 1000:$1.0128
  • 500:$1.1045
  • 250:$1.2104
  • 100:$1.2521
  • 50:$1.3485
  • 25:$1.4984
  • 10:$1.5510
  • 1:$1.7777
IPB049N08N5ATMA1
DISTI # IPB049N08N5ATMA1-ND
Infineon Technologies AGMOSFET N-CH 80V TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 1000:$1.2344
IPB049N08N5ATMA1
DISTI # 26195151
Infineon Technologies AGTrans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
334
  • 500:$1.1045
  • 250:$1.2104
  • 100:$1.2521
  • 50:$1.5149
  • 25:$1.5328
  • 10:$1.5511
  • 7:$1.7777
IPB049N08N5ATMA1
DISTI # IPB049N08N5ATMA1
Infineon Technologies AGMV POWER MOS - Tape and Reel (Alt: IPB049N08N5ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$1.1149
  • 2000:$1.0739
  • 4000:$1.0359
  • 6000:$1.0009
  • 10000:$0.9829
IPB049N08N5ATMA1
DISTI # SP001227052
Infineon Technologies AGMV POWER MOS (Alt: SP001227052)
RoHS: Compliant
Min Qty: 1000
Europe - 0
  • 1000:€1.2629
  • 2000:€1.0519
  • 4000:€0.9709
  • 6000:€0.9019
  • 10000:€0.8419
IPB049N08N5ATMA1
DISTI # 49AC0281
Infineon Technologies AGMOSFET, N-CH, 80V, 80A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0043ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes928
  • 1:$2.0900
  • 10:$1.7800
  • 25:$1.6600
  • 50:$1.5400
  • 100:$1.4200
  • 250:$1.3400
  • 500:$1.2500
IPB049N08N5ATMA1
DISTI # 726-IPB049N08N5ATMA1
Infineon Technologies AGMOSFET N-Ch 80V 80A D2PAK-2
RoHS: Compliant
537
  • 1:$2.0900
  • 10:$1.7800
  • 100:$1.4200
  • 500:$1.2500
  • 1000:$1.0300
IPB049N08N5ATMA1Infineon Technologies AGPower Field-Effect Transistor, 80A I(D), 80V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant
1000
  • 1000:$0.8800
  • 500:$0.9300
  • 100:$0.9700
  • 25:$1.0100
  • 1:$1.0900
IPB049N08N5ATMA1
DISTI # C1S322000625598
Infineon Technologies AGMOSFETs334
  • 100:$1.2521
  • 50:$1.5149
  • 25:$1.5328
  • 10:$1.5511
IPB049N08N5ATMA1
DISTI # 2839449
Infineon Technologies AGMOSFET, N-CH, 80V, 80A, TO-263-3
RoHS: Compliant
928
  • 5:$3.6500
  • 25:$3.1800
  • 100:$2.6000
  • 250:$2.1900
  • 500:$1.9000
  • 1000:$1.7900
  • 5000:$1.7000
IPB049N08N5ATMA1
DISTI # 2839449
Infineon Technologies AGMOSFET, N-CH, 80V, 80A, TO-263-3
RoHS: Compliant
928
  • 1:£2.2400
  • 10:£1.7000
  • 100:£1.3500
Bild Teil # Beschreibung
W5500

Mfr.#: W5500

OMO.#: OMO-W5500

Ethernet ICs 3in1 Enet Controller TCP/IP +MAC+PHY
2N7002

Mfr.#: 2N7002

OMO.#: OMO-2N7002

MOSFET N-CHANNEL 60V 115mA
LM5022MM/NOPB

Mfr.#: LM5022MM/NOPB

OMO.#: OMO-LM5022MM-NOPB

Switching Controllers 60V Low Side Controller
RC0603FR-070RL

Mfr.#: RC0603FR-070RL

OMO.#: OMO-RC0603FR-070RL

Thick Film Resistors - SMD 0.0ohm 1%
RC0603FR-071KL

Mfr.#: RC0603FR-071KL

OMO.#: OMO-RC0603FR-071KL

Thick Film Resistors - SMD 1K OHM 1%
LM5022MM/NOPB

Mfr.#: LM5022MM/NOPB

OMO.#: OMO-LM5022MM-NOPB-TEXAS-INSTRUMENTS

Switching Controllers 60V Low Side Controlle
W5500

Mfr.#: W5500

OMO.#: OMO-W5500-WIZNET

Ethernet ICs 3in1 Enet Controller TCP/IP +MAC+PHY
GRT188R61H105KE13D

Mfr.#: GRT188R61H105KE13D

OMO.#: OMO-GRT188R61H105KE13D-MURATA-ELECTRONICS

Cap Ceramic 1uF 50V X5R 10% Pad SMD 0603 85C Automotive T/R
2N7002

Mfr.#: 2N7002

OMO.#: OMO-2N7002-ON-SEMICONDUCTOR

MOSFET N-CH 60V 115MA SOT-23
FT812Q-T

Mfr.#: FT812Q-T

OMO.#: OMO-FT812Q-T-BRIDGETEK

Multimedia ICs Video ICs EVE with 24bit RGB Resistive touch
Verfügbarkeit
Aktie:
618
Auf Bestellung:
2601
Menge eingeben:
Der aktuelle Preis von IPB049N08N5ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,27 $
2,27 $
10
1,93 $
19,30 $
100
1,54 $
154,00 $
500
1,35 $
675,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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