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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| IPB04CN10N G DISTI # 726-IPB04CN10NG | Infineon Technologies AG | MOSFET N-Ch 100V 100A D2PAK-2 RoHS: Compliant | 0 |
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: IPB044N15N5ATMA1 OMO.#: OMO-IPB044N15N5ATMA1 |
MOSFET |
|
Mfr.#: IPB042N10N3 G OMO.#: OMO-IPB042N10N3-G |
MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3 |
|
Mfr.#: IPB042N03LG OMO.#: OMO-IPB042N03LG-1190 |
Neu und Original |
|
Mfr.#: IPB044N15N5ATMA1 |
MOSFET N-CH 150V 174A TO263-7 |
|
Mfr.#: IPB04N03LB |
MOSFET N-CH 30V 80A D2PAK |
|
|
Mfr.#: IPB042N10N3 OMO.#: OMO-IPB042N10N3-1190 |
Neu und Original |
|
|
Mfr.#: IPB049N06L3 OMO.#: OMO-IPB049N06L3-1190 |
Neu und Original |
|
|
Mfr.#: IPB049N06L3G OMO.#: OMO-IPB049N06L3G-1190 |
Power Field-Effect Transistor, 80A I(D), 60V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
|
Mfr.#: IPB042N10N3GE818XT OMO.#: OMO-IPB042N10N3GE818XT-317 |
RF Bipolar Transistors MOSFET N-Ch 100V 100A D2PAK-2 |
|
|
Mfr.#: IPB049N08N5ATMA1 |
MOSFET N-CH 80V TO263-3 |