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IPB044N15N5ATMA1

IPB044N15N5ATMA1
Mfr. #:
IPB044N15N5ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB044N15N5ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPB044N15N5ATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-7
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
150 V
Id - Kontinuierlicher Drainstrom:
174 A
Rds On - Drain-Source-Widerstand:
3.4 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
100 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
300 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Serie:
OptiMOS 5
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
72 S
Abfallzeit:
5 ns
Produktart:
MOSFET
Anstiegszeit:
6 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
24 ns
Typische Einschaltverzögerungszeit:
19 ns
Teil # Aliase:
IPB044N15N5 SP001326442
Gewichtseinheit:
0.077603 oz
Tags
IPB04, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
IPB044N15N5 Series 150 V 174 A OptiMOSTM5 Power-Transistor - TO-263-7
***ical
Trans MOSFET N-CH 150V 174A 7-Pin(6+Tab) D2PAK T/R
***et
Trans MOSFET N 150V 174A 7-Pin TO-263 T/R
***i-Key
MOSFET N-CH 150V 174A TO263-7
***ronik
N-CH 150V 174A 4,4mOhm TO263-7
***ark
Mosfet, N-Ch, 150V, 174A, To-263-7; Transistor Polarity:n Channel; Continuous Drain Current Id:174A; Drain Source Voltage Vds:150V; On Resistance Rds(On):0.0034Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.8V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 150V, 174A, TO-263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:174A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.0034ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.8V; Power Dissipation Pd:300W; Transistor Case Style:TO-263; No. of Pins:7Pins; Operating Temperature Max:175°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 150V, 174A, TO-263-7; Polarità Transistor:Canale N; Corrente Continua di Drain Id:174A; Tensione Drain Source Vds:150V; Resistenza di Attivazione Rds(on):0.0034ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.8V; Dissipazione di Potenza Pd:300W; Modello Case Transistor:TO-263; No. di Pin:7Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
The new OptiMOS 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness. | Summary of Features: Lower R DS(on) without compromising FOM gd and FOM oss; Lower output charge; Ultra-low reverse recovery charge; Increased commutation ruggedness; Higher switching frequency possible | Benefits: Reduced paralleling; Size reduction enabled with SuperSO8 best-in-class; Higher power density designs; More rugged products; System cost reduction; Improved EMI behavior | Target Applications: Low voltage drives; Telecom; Solar
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Light Electric Vehicles (LEV)
Infineon Light Electric Vehicles have world-changing potential utilizing the emission-free solution for rising megacities. LEV's apply new technology enabling greater power efficiency, smaller size, lighter weight, and lower cost solutions. LEVs cost less when compared to gasoline or battery powered EVs, making them affordable and hence attractive to emerging markets, where a transition to electrified mobility is in progress.
Teil # Mfg. Beschreibung Aktie Preis
IPB044N15N5ATMA1
DISTI # V72:2272_16140315		Infineon Technologies AGTrans MOSFET N-CH 150V 174A 7-Pin(6+Tab) TO-263 T/R
RoHS: Compliant		0
    IPB044N15N5ATMA1
    DISTI # V36:1790_16140315    		Infineon Technologies AGTrans MOSFET N-CH 150V 174A 7-Pin(6+Tab) TO-263 T/R
    RoHS: Compliant    		0
      IPB044N15N5ATMA1
      DISTI # IPB044N15N5ATMA1TR-ND      		Infineon Technologies AGMOSFET N-CH 150V 174A TO263-7
      RoHS: Compliant
      Min Qty: 1000
      Container: Tape & Reel (TR)      		On Order
      • 2000:$3.9797
      • 1000:$4.1328
      IPB044N15N5ATMA1
      DISTI # IPB044N15N5ATMA1CT-ND      		Infineon Technologies AGMOSFET N-CH 150V 174A TO263-7
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)      		Temporarily Out of Stock
      • 500:$4.8874
      • 100:$5.8333
      • 10:$7.0950
      • 1:$7.8800
      IPB044N15N5ATMA1
      DISTI # IPB044N15N5ATMA1DKR-ND      		Infineon Technologies AGMOSFET N-CH 150V 174A TO263-7
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Temporarily Out of Stock
      • 500:$4.8874
      • 100:$5.8333
      • 10:$7.0950
      • 1:$7.8800
      IPB044N15N5ATMA1
      DISTI # IPB044N15N5ATMA1      		Infineon Technologies AGTrans MOSFET N 150V 174A 7-Pin TO-263 T/R - Tape and Reel (Alt: IPB044N15N5ATMA1)
      RoHS: Compliant
      Min Qty: 1000
      Container: Reel      		Americas - 0
      • 1000:$3.9900
      • 2000:$3.7900
      • 4000:$3.6900
      • 6000:$3.5900
      • 10000:$3.4900
      IPB044N15N5ATMA1
      DISTI # SP001326442      		Infineon Technologies AGTrans MOSFET N 150V 174A 7-Pin TO-263 T/R (Alt: SP001326442)
      RoHS: Compliant
      Min Qty: 1000
      Container: Tape and Reel      		Europe - 0
      • 1000:€3.6900
      • 2000:€3.5900
      • 4000:€3.3900
      • 6000:€3.1900
      • 10000:€2.9900
      IPB044N15N5ATMA1
      DISTI # 43AC3262      		Infineon Technologies AGMOSFET, N-CH, 150V, 174A, TO-263-7,Transistor Polarity:N Channel,Continuous Drain Current Id:174A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.0034ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.8V,Power RoHS Compliant: Yes0
      • 500:$4.3100
      • 250:$4.7300
      • 100:$4.9500
      • 50:$5.3300
      • 25:$5.7000
      • 10:$5.9800
      • 1:$6.6200
      IPB044N15N5ATMA1
      DISTI # 726-IPB044N15N5ATMA1      		Infineon Technologies AGMOSFET
      RoHS: Compliant      		0
      • 1:$6.6200
      • 10:$5.9800
      • 25:$5.7000
      • 100:$4.9500
      • 250:$4.7300
      • 500:$4.3100
      • 1000:$3.7500
      • 2000:$3.6100
      IPB044N15N5ATMA1
      DISTI # 2803386      		Infineon Technologies AGMOSFET, N-CH, 150V, 174A, TO-263-7
      RoHS: Compliant      		0
      • 100:£4.5200
      • 10:£5.2200
      • 1:£6.6700
      IPB044N15N5ATMA1
      DISTI # 2803386      		Infineon Technologies AGMOSFET, N-CH, 150V, 174A, TO-263-7
      RoHS: Compliant      		0
      • 1000:$5.8100
      • 500:$6.1100
      • 250:$6.4500
      • 100:$6.8200
      • 10:$7.7100
      • 1:$8.2500
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1989
      Menge eingeben:
      Der aktuelle Preis von IPB044N15N5ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      6,62 $
      6,62 $
      10
      5,98 $
      59,80 $
      25
      5,70 $
      142,50 $
      100
      4,95 $
      495,00 $
      250
      4,73 $
      1 182,50 $
      500
      4,31 $
      2 155,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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