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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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Teil # | Mfg. | Beschreibung | Aktie | Preis |
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IPB60R060P7ATMA1 DISTI # V72:2272_18787574 | Infineon Technologies AG | HIGH POWER_NEW | 890 |
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IPB60R060P7ATMA1 DISTI # V36:1790_18787574 | Infineon Technologies AG | HIGH POWER_NEW | 0 |
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IPB60R060P7ATMA1 DISTI # IPB60R060P7ATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 1692In Stock |
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IPB60R060P7ATMA1 DISTI # IPB60R060P7ATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 1692In Stock |
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IPB60R060P7ATMA1 DISTI # IPB60R060P7ATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | 1000In Stock |
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IPB60R060P7ATMA1 DISTI # 33704475 | Infineon Technologies AG | HIGH POWER_NEW | 1000 |
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IPB60R060P7ATMA1 DISTI # 32882183 | Infineon Technologies AG | HIGH POWER_NEW | 890 |
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IPB60R060P7ATMA1 DISTI # IPB60R060P7 | Infineon Technologies AG | CoolMOS P7 Power MOSFET High Power 60/65mΩ 600V D2-PAK (Alt: IPB60R060P7) RoHS: Compliant Min Qty: 1000 | Asia - 400 |
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IPB60R060P7ATMA1 DISTI # IPB60R060P7ATMA1 | Infineon Technologies AG | CoolMOS P7 Power MOSFET High Power 60/65mΩ 600V D2-PAK - Tape and Reel (Alt: IPB60R060P7ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
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IPB60R060P7ATMA1 DISTI # SP001664882 | Infineon Technologies AG | CoolMOS P7 Power MOSFET High Power 60/65mΩ 600V D2-PAK (Alt: SP001664882) RoHS: Compliant Min Qty: 1000 | Europe - 0 |
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IPB60R060P7ATMA1 DISTI # 49AC7993 | Infineon Technologies AG | MOSFET, N-CH, 600V, 48A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:48A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.049ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes | 150 |
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IPB60R060P7ATMA1 DISTI # 726-IPB60R060P7ATMA1 | Infineon Technologies AG | MOSFET HIGH POWER_NEW RoHS: Compliant | 592 |
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IPB60R060P7ATMA1 | Infineon Technologies AG | Single N-Channel 600 V 60 mOhm 67 nC CoolMOS Power Mosfet - D2PAK RoHS: Not Compliant | 1000Reel |
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IPB60R060P7ATMA1 DISTI # 2841641 | Infineon Technologies AG | MOSFET, N-CH, 600V, 48A, TO-263 RoHS: Compliant | 146 |
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IPB60R060P7ATMA1 DISTI # 2841641 | Infineon Technologies AG | MOSFET, N-CH, 600V, 48A, TO-263 | 406 |
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IPB60R060P7ATMA1 DISTI # XSFP00000158368 | Infineon Technologies AG | Single N-Channel 600 V 60 mOhm 67 nCCoolMOSPowerMosfet - D2PAK RoHS: Compliant | 2000 in Stock0 on Order |
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Bild | Teil # | Beschreibung |
---|---|---|
Mfr.#: IPB60R060P7ATMA1 OMO.#: OMO-IPB60R060P7ATMA1 |
MOSFET HIGH POWER_NEW | |
Mfr.#: IPB60R060C7ATMA1 OMO.#: OMO-IPB60R060C7ATMA1 |
MOSFET HIGH POWER_NEW | |
Mfr.#: IPB60R060C7ATMA1 |
MOSFET N-CH 650V 35A TO263-3 | |
Mfr.#: IPB60R060P7ATMA1 |
MOSFET N-CH TO263-3 |